| 研究実績の概要 |
we demonstrated the monolithically integrated InGaAsP optical modulator with InGaAs driver MOSFET on III-V CMOS photonics platform with solving above problems.
Firstly, the effect of pre-bonding annealing on III-VOI wafer was investigated. By applying pre-bonding annealing process, we successfully suppressed void generation. The void density was highly reduced from 106 to 103 after post annealing process at 600°C. Secondly, low resistive lateral P-I-N junction was formed by Zn diffusion and Ni-InGaAsP alloy junction. By Zn diffusion method, the sheet and contact resistance of p+ region was highly reduced compare to Be ion implantation method. Moreover, the Ni-InGaAsP alloy was firstly demonstrated to replace Si ion implantation. The Ni-InGaAsP alloy enable to make a low resistive n+ junction with low temperature under 350°C. Although the total process temperature was suppressed to 500°C. Using these result, we demonstrated the InGaAsP optical modulator using optical absorption. The InGaAsP modulator shows almost -40dB/mm attenuation at 40mA/mm current injection which is almost 2 times larger than Si modulator.
Finally, we firstly demonstrated monolithically integrated InGaAsP asymmetric Mach-Zehnder interferometer (MZI) modulator and InGaAs driver MOSFET. The InGaAsP modulator shows shift of free-spectrum range (FSR) by current injection and it needs almost 2.2 mA for phi shift. While modulator operation via InGaAs driver MOSFET, we obtained the phase shift of InGaAsP modulator by gate bias change.
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