| 研究実績の概要 |
The third year continued the development of novel ferroelectric digital memory system and novel polymers with oxygen-based conjugated moieties.
The synthesis and characterization of novel polymers with oxygen-based conjugated moieties have been confirmed successful previously and the resistive memory behavior was measured in various thin film thicknesses. In order to comprehend the correlation between the position and number of oxygen atoms in the electroactive side chains to the resistive memory behavior, a careful analysis of the voltage-current (I-V) measurements was done. Through the analysis, a four stage conduction mechanism seemed to be present in all of the polymers and I have developed a new theory on the conduction mechanism for the novel polymers. Currently, the research contents of the oxygen containing polymers are summarized and in process of submission to international academic journals.
The development of novel ferroelectric digital memory polymer has been steadily making progress. The results are showing that the magnitude of the ferroelectricity is dependent on the length of the perfluorinated brushes of the polymers and some additional polymers with larger variety of perfluorinated brush lengthes have been synthesized for the purpose of investigating the correlation of the chemical structure to the spontaneous polarization behavior. Additional measurements and characterization have been acquired to prepare several manuscripts for this system. Currently, the manuscript for this system is being prepared for publication.
|
