室温動作を可能にするIV族半導体量子デバイスの製作

• 研究課題/領域番号: 19360002
• 研究種目: 基盤研究(B)
• 配分区分: 補助金
• 応募区分: 一般
• 研究分野: 応用物性・結晶工学
• 研究機関: 東北大学
• 研究代表者: 櫻庭 政夫 東北大学, 電気通信研究所, 准教授 (30271993)
• 研究分担者: 室田 淳一 東北大学, 電気通信研究所, 教授 (70182144)
• 研究期間 (年度): 2007 – 2009
• 研究課題ステータス: 完了 (2009年度)
• 配分額: 18,460千円 (直接経費: 14,200千円、間接経費: 4,260千円); 2009年度: 6,240千円 (直接経費: 4,800千円、間接経費: 1,440千円); 2008年度: 6,110千円 (直接経費: 4,700千円、間接経費: 1,410千円); 2007年度: 6,110千円 (直接経費: 4,700千円、間接経費: 1,410千円)
• キーワード: ヘテロ構造 / IV族半導体 / 量子デバイス / 室温動作 / エピタキシャル成長

研究概要

高Ge比率(0.4<x≦1)の歪Si_<1-x>Ge_x層表面へのSiキャップ層エピタキシャル成長において、低温SiH_4処理や従来のSiH_4の代わりに反応性の高いSi_2H_6を原料ガスとして用いてSi堆積を低温化・高速化させることにより、高Ge比率Si/歪Si_<1-x>Ge_x量子ヘテロ構造の界面ラフネス発生を効果的に抑制でき、これを共鳴トンネルダイオード製作プロセスに適用することにより、室温での負性コンダクタンス特性の向上につながることを明らかにした。

研究成果

• [雑誌論文] Improvement in Negative Differential Conductance Characteristics of Hole Resonant-Tunneling Diodes with High Ge Fraction Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure (2009)
  • 著者名/発表者名: T. Seo, K. Takahashi, M. Sakuraba, J. Murota
  • 雑誌名: Solid-State Electron. Vol. 53 ページ: 912-915
  • 査読あり
• [雑誌論文] Improvement in Negative Differential Conductance Characteristics of Hole Resonant-Tunneling Diodes with High Ge Fraction Si/Strained Si_<1-x>Ge_x/Si(100)Heterostructure (2009)
  • 著者名/発表者名: T.Seo
  • 雑誌名: Solid-State Electron. 53 ページ: 912-915
  • 査読あり
• [雑誌論文] Impact of Ge Fraction Modulation upon Electrical Characteristics of Hole Resonant Tunneling Diodes with Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure (2008)
  • 著者名/発表者名: T. Seo, M. Sakuraba, J. Murota
  • 雑誌名: Thin Solid Films Vol. 517 ページ: 110-112
  • 査読あり
• [雑誌論文] Electrical Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction (x>0.4) Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure (2008)
  • 著者名/発表者名: T. Seo, M. Sakuraba, J. Murota
  • 雑誌名: Appl.Surf.Sci. Vol. 254 ページ: 6265-6267
  • 査読あり
• [雑誌論文] Impact of Ge Fraction Modulation upon Electrical Characteristics of Hole Resonant Tunneling Diodes with Si / Strained Si_<1-x>Ge_x / Si (100) Heterostructure (2008)
  • 著者名/発表者名: T. Seo
  • 雑誌名: Thin Solid Films 517 ページ: 110-112
  • 査読あり
• [雑誌論文] Electrical Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction(x>0.4)Si/Strained Si_<1-x> Ge_x/Si(100)Heterostructure (2008)
  • 著者名/発表者名: T. Seo
  • 雑誌名: Appl. Surf. Sci. 254(in press)
  • 査読あり
• [雑誌論文] Fabrication of Hole Resonant Tunneling Diodes with Nanometer Order Heterostructures of Si/Strained Si_<1-x>Ge_x Epitaxially Grown on Si (100) (2007)
  • 著者名/発表者名: M. Sakuraba, R. Ito, T. Seo, J. Murota
  • 雑誌名: ECS Trans. Vol. 11(Invited Paper) ページ: 131-139
  • 査読あり
• [雑誌論文] Fabrication of Hole Resonant Tunneling Diodes with Nanometer Prder Hterostructures of Si/Strained Si_<1-x> Ge_x Epitaxially Grown on Si(100)(Invited Paper) (2007)
  • 著者名/発表者名: M. Sakuraba
  • 雑誌名: ECS Trans. 11 ページ: 131-139
  • 査読あり
• [学会発表] Resonant Tunneling Diodes with Highly Strained Heterostructures of Si/Si_<1-x>Ge_x Epitaxially Grown on Si(100) (2009)
  • 著者名/発表者名: M. Sakuraba, J. Murota
  • 学会等名: 2nd French Research Organizations-Tohoku University Joint Workshop on Frontier Materials
  • 発表場所: Sendai, Japan
• [学会発表] Resonant Tunneling Diodes with Highly Strained Heterostructures of Si/Si_<1-x>Ge_x Epitaxially Grown on Si(100) (2009)
  • 著者名/発表者名: M. Sakuraba, J. Murota
  • 学会等名: 1st Int. Workshop on Si Based Nano-Electronics and-Photonics (SiNEP-09)
  • 発表場所: Vigo, Spain(Invited Paper)
• [学会発表] Resonant Tunneling Diodes with Highly Strained Heterostructures of Si/Sil-xGex Epitaxially Grown on Si(100)(Invited Paper) (2009)
  • 著者名/発表者名: M.Sakuraba
  • 学会等名: 1st Int.Workshop on Si Based Nano-Electronics and -Photonics(SiNEP-09)
  • 発表場所: Vigo, Spain
• [学会発表] Fabrication of Hole Resonant Tunneling Diodes Utilizing Nanometer-Order Strained SiGe/Si(100) Heterostructures with High Ge Fraction (2008)
  • 著者名/発表者名: M. Sakuraba, R. Ito, T. Seo, J. Murota
  • 学会等名: 4th Int. Workshop on New Group IV Semiconductor Nanoelectronics
  • 発表場所: Sendai, Japan
• [学会発表] Hole Resonant Tunneling Diodes Utilizing High Ge Fraction (x>0.5) Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure with Improved Performance at Higher Temperature above 200K (2008)
  • 著者名/発表者名: K. Takahashi, T. Seo, M. Sakuraba, J. Murota
  • 学会等名: 4th Int. Workshop on New Group IV Semiconductor Nanoelectronics
  • 発表場所: Sendai, Japan
• [学会発表] Improvement in Negative Differential Conductance Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure (2008)
  • 著者名/発表者名: T. Seo, K. Takahashi, M. Sakuraba, J. Murota
  • 学会等名: 4th Int. SiGe Technology and Device Meeting (ISTDM2008)
  • 発表場所: Hsinchu, Taiwan
• [学会発表] Improvement in Negative Differential Conductance Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction Si / Strained Si_<1-x>Ge_x / Si (100) Heterostructure (2008)
  • 著者名/発表者名: T. Seo
  • 学会等名: 4th Int. SiGe Technology and Device Meeting (ISTDM2008)
  • 発表場所: Hsinchu, Taiwan
• [学会発表] Hole Resonant Tunneling Diodes Utilizing High Ge Fraction (x>0.5) Si / Strained Si_<1-x>Ge_x / Si (100) Heterostructure with Improved Performance at Higher Temperature above 200 K (2008)
  • 著者名/発表者名: K. Takahashi
  • 学会等名: 4th Int. Workshop on New Group IV Semiconductor Nanoelectronics
  • 発表場所: Sendai, Japan
• [学会発表] Fabrication of Hole Resonant Tunneling Diodes Utilizing Nanometer-Order Strained SiGe / Si (100) Heterostructures with High Ge Fraction (2008)
  • 著者名/発表者名: M. Sakuraba
  • 学会等名: 4th Int. Workshop on New Group IV Semiconductor Nanoelectronics
  • 発表場所: Sendai, Japan
• [学会発表] Electrical Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction (x>0.4) Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure (2007)
  • 著者名/発表者名: T. Seo, M. Sakuraba, J. Murota
  • 学会等名: 5th Int. Symp. Control of Semiconductor Interfaces (ISCSI-V)
  • 発表場所: Hachioji, Japan
• [学会発表] Characterization of Temperature-Dependent Hole Resonant Tunneling Properties with High Ge Fraction (x>0.4) Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure (2007)
  • 著者名/発表者名: T. Seo, M. Sakuraba, J. Murota
  • 学会等名: 3rd Int. Workshop on New Group IV Semiconductor Nanoelectronics
  • 発表場所: Sendai, Japan
• [学会発表] Fabrication of Hole Resonant Tunneling Diodes with Nanometer Order Heterostructures of Si/Strained Si_<1-x>Ge_x Epitaxially Grown on Si(100) (Invited Paper), Symp. E9 : ULSI (2007)
  • 著者名/発表者名: M. Sakuraba, R. Ito, T. Seo, J. Murota
  • 学会等名: Process Integration 5 (212th Meeting of the Electrochem. Soc.)
  • 発表場所: Washington, DC, USA(Invited Paper)
• [学会発表] Impact of Ge Fraction Modulation upon Electrical Characteristics of Hole Resonant Tunneling Diodes with Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure (2007)
  • 著者名/発表者名: T. Seo, M. Sakuraba, J. Murota
  • 学会等名: 5th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-5)
  • 発表場所: Marseille, France
• [学会発表] Impact of Ge Fraction Modulation upon Electrical Characteristics of Hole Resonant Tunneling Diodes with Si/Strained Si_<1-x> Ge_x/Si(100)Heterostructure (2007)
  • 著者名/発表者名: T. Seo
  • 学会等名: 5th Int. Conf. Silicon Epitaxy and Heterostructures(ICSI-5)
  • 発表場所: Marseille, France
• [学会発表] Fabrication of Hole Resonant Tunneling Diodes with Nanometer Order Heterostructures of Si/Strained Si_<1-x> Ge_x Epitaxially Grown on Si(100)(Invited Paper) (2007)
  • 著者名/発表者名: M. Sakuraba
  • 学会等名: Symp. E9: ULSI Process Integration 5(212th Meeting of the Electrochem. Soc.)
  • 発表場所: Washington, DC, USA
• [学会発表] Characterization of Temperature-Dependent Hole Resonant Tunneling Properties with High Ge Fraction(x>0.4)Si/Strained Si_<1-x> (2007)
  • 著者名/発表者名: T. Seo
  • 学会等名: 3rd Int. Workshop on New Group IV Semiconductor Nanoelectronics
  • 発表場所: Sendai, Japan
• [学会発表] Electrical Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction(x>0.4)Si/Strained Si_<1-x> Ge_x/Si(100)Heterostructure (2007)
  • 著者名/発表者名: T. Seo
  • 学会等名: 5th Int. Symp. Control of Semiconductor Interfaces(ISCSI-V)
  • 発表場所: Hachioji, Japan