超高速低損失電界効果ドリフト層を有する新しい3次元パワーデバイス構造に関する研究

• 研究課題/領域番号: 19686019
• 研究種目: 若手研究(A)
• 配分区分: 補助金
• 研究分野: 電力工学・電気機器工学
• 研究機関: 東北大学
• 研究代表者: 程 うぇい涛 (程 〓涛 / 程 い涛) 東北大学, 未来科学技術共同研究センター, 助教授 (60431540)
• 研究期間 (年度): 2007 – 2008
• 研究課題ステータス: 完了 (2008年度)
• 配分額: 26,780千円 (直接経費: 20,600千円、間接経費: 6,180千円); 2008年度: 4,160千円 (直接経費: 3,200千円、間接経費: 960千円); 2007年度: 22,620千円 (直接経費: 17,400千円、間接経費: 5,220千円)
• キーワード: パワーデバイス / 電界効果ドリフト層 / 3次元構造 / コーナー丸め効果 / 平坦化

研究概要

本研究は、より環境にやさしい省エネルギー社会の実現に重要な役割をもつ高速かつ低損失パワーデバイスの実用を目指し、デバイス形成プロセスおよびパワーデバイスの構造そのものに着目し、チャンネル抵抗などオン抵抗を大幅に低減することに成功し、シリコン系でもワイドギャップ系でも応用可能な非常に高性能かつ低損失な新しい2次元および高集積度の3次元パワーデバイスを実現可能であることを実証した。

研究成果

• [雑誌論文] Experimental Demonstration and Analysis of High Performance and Low 1/f Noise Tri-gate MOSFETs by Optimizing Device Structure (2009)
  • 著者名/発表者名: Weitao Cheng, Akinobu Teramoto, Tadahiro Ohmi
  • 雑誌名: Microelectronic Engineering (to be published on June 2009)
  • 査読あり
• [雑誌論文] Impact of New Approach to Improve MOSFETs Performance with Ultrathin Gate Insulator (2009)
  • 著者名/発表者名: WEITAO CHENG, AKINOBU TERAMOTO, TADAHIRO OHMI
  • 雑誌名: Electrochemical Society Transactions (to be published on May 2009)
  • 査読あり
• [雑誌論文] A Study on Very High Performance Novel Balanced Fully Depleted Silicon-on-Insulator Complementary Metal-Oxide-Semiconductor Field-Effect Transistors on Si(110) Using Accumulation-Mode Device Structure for Radio-Frequency Analog Circuits (2009)
  • 著者名/発表者名: Weitao Cheng, Akinobu Teramoto, ChingFoa Tye, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro Ohmi
  • 雑誌名: Japanese Journal of Applied Physics Vol. 48
  • NAID: 210000066558
  • 査読あり
• [雑誌論文] Different mechanism to explain the 1/f noise in n-and p-SOI-MOS transistors fabricated on (110) and (100) silicon-oriented wafers (2009)
  • 著者名/発表者名: Philippe Gaubert, Akinobu Teramoto, Weitao Cheng, Tatsufumi Hamada, Tadahiro Ohmi
  • 雑誌名: Journal of Vacuum Science & Technology B Vol.27, No.1 ページ: 394-401
  • 査読あり
• [雑誌論文] Different mechanism to explain the 1/f noise in n-and p-SOI MOS transistors fabricated on (110) and (100) silicon-oriented wafers (2009)
  • 著者名/発表者名: Philippe Gaubert
  • 雑誌名: Journal of Vacuum Science & Technology B 27 ページ: 394-401
  • 査読あり
• [雑誌論文] A Study on Very High Performance Novel Balanced FD-SOI CMOSFETs on Si (110) Using Accumulation Mode Device Structure for RF Analon Circuits (2009)
  • 著者名/発表者名: Weitao Cheng
  • 雑誌名: Japanese Journal of Applied Physics 4
  • 査読あり
• [雑誌論文] Experimental Demonstration and Analysis of High Performance and Low 1 / f Noise Tri-gate MOSFETs by Optimizing Device Structure (2009)
  • 著者名/発表者名: Weitao Cheng
  • 雑誌名: Microelectronic Engineering 6(印刷中)
  • 査読あり
• [雑誌論文] Impact of New Approach to Improve MOSFETs Performance with Ultrathin Gate Insulator (2009)
  • 著者名/発表者名: Weitao Cheng
  • 雑誌名: Electrochemical Society Transactions 5(印刷中)
  • 査読あり
• [雑誌論文] Performance Boost Using a New Device Structure Design for SOI MOSFETs Beyond 25nm Node (2007)
  • 著者名/発表者名: W. Cheng, A. Teramoto, T. Ohmi
  • 雑誌名: Electrochemical Society Transactions Vol.11 No.6 ULSI Process Integration 5 ページ: 349-354
  • 査読あり
• [雑誌論文] High Performance and highly reliable novel CMOS devices using accumulation mode multi-gate and fully depleted SOI MOSFETs (2007)
  • 著者名/発表者名: W. Cheng, A. Teramoto, R. Kuroda, M. Hirayama, T.Ohmi
  • 雑誌名: Microelectronic Engineering Vol.84/9-10 ページ: 2105-2108
  • 査読あり
• [雑誌論文] Hot Carrier Instability Mechanism in Accumulation-Mode Normally-off SOI nMOSFETs and Their Reliability Advantage (2007)
  • 著者名/発表者名: R. Kuroda, A. Teramoto, W. Cheng, S. Sugawa, T. Ohmi
  • 雑誌名: ECS Transactions Vol.6 No.4 Silicon-on-Insulator Technology and Devices 13 ページ: 113-118
  • 査読あり
• [雑誌論文] Impact of Improved Mobilities and Suppressed 1/f Noise in Fully Depleted SOI MOSFETs Fabricated on Si(110) Surface (2007)
  • 著者名/発表者名: W. Cheng, A. Teramoto, C. Tye, P. Gaubert, M. Hirayama, S. Sugawa, T. Ohmi
  • 雑誌名: ECS Transactions Vol.6 No.4 Silicon-on-Insulator Technology and Devices 13 ページ: 101-106
  • 査読あり
• [雑誌論文] Impact of Improved Mobilities and Suppressed 1/f Noise in Fully Depleted SOI MOSFETs Fabricated on Si (110) Surface (2007)
  • 著者名/発表者名: Weitao Cheng
  • 雑誌名: Electrochemical Society Transactions 6 ページ: 101-106
  • 査読あり
• [雑誌論文] Hot Carrier Instability Mechanism in Accumulation-Mode Normally-off SOI nMOSFETs and Their Reliability Advantage (2007)
  • 著者名/発表者名: Rihito Kuroda
  • 雑誌名: Electrochemical Society Transactions 6 ページ: 113-118
  • 査読あり
• [雑誌論文] High Performance and highly reliable novel CMOS devices using accumulation mode multi-gate and fully depleted SOI MOSFETs (2007)
  • 著者名/発表者名: Weitao Cheng
  • 雑誌名: Microelectronic Engineering 84 ページ: 2105-2108
  • 査読あり
• [雑誌論文] Performance Boost Using a New Device Structure Design for SOI MOSFETs Beyond 25nm Node (2007)
  • 著者名/発表者名: Weitao Cheng
  • 雑誌名: Electrochemical Society Transactions 11 ページ: 349-354
  • 査読あり
• [学会発表] Improved High Temperature Characteristics in Accumulation-mode Fully Depleted SOI MOSFETs on Si (100) and (110) Surfaces (2008)
  • 著者名/発表者名: Weitao Cheng
  • 学会等名: PACIFIC RIM MEETING ON ELECTROCHEMICAL AND SOLID-STATE SCIENCE
  • 発表場所: Honolulu, USA
  • 年月日: 2008-10-14
• [学会発表] A Study on Very High Performance Novel Balanced FD-SOI CMOSFETs on Si (110) Using Accumulation Mode Device Structure for RF Analog Circuits (2008)
  • 著者名/発表者名: Weitao Cheng
  • 学会等名: 2008 International Conference on SOLID STATE DEVICES AND MATERIALS
  • 発表場所: つくば
  • 年月日: 2008-09-26
• [学会発表] Impact of Performance and Reliability Boosters in Novel FD-S0I CMOS Devices on Si(110) Surface for Analog Applications (2008)
  • 著者名/発表者名: Weitao Cheng
  • 学会等名: 29^<th> International Conference on the Physics of Semiconductors
  • 発表場所: Brazil Rio de Vaneiro
  • 年月日: 2008-07-29
• [学会発表] Different mechanism to explain the 1/f noise in n-and p-SOI-MOS trans istors fabricated on (110) and (100) silicon oriented wafers (2008)
  • 著者名/発表者名: Philippe Gaubert
  • 学会等名: 15^<th> Workshop on Dielectrics in Microelectronits
  • 発表場所: Berlin, Germany
  • 年月日: 2008-06-23
• [学会発表] A New Approach to Realize High Performance RF Power FETs on Si (110) Surface (2008)
  • 著者名/発表者名: Weitao Cheng
  • 学会等名: IEEE 39^<th> Annual Power Electronics Specialis is Conference
  • 発表場所: Rhodes, Greece
  • 年月日: 2008-06-18
• [学会発表] Impact of New Approach to Improve RF Power FETs Performance on Si (110) Surface (2008)
  • 著者名/発表者名: Weitao Cheng
  • 学会等名: 213th Meeting of The Electrochemical Societ Y
  • 発表場所: Phoenix, USA
  • 年月日: 2008-05-20
• [学会発表] Characterization of MOSFETs Intrinsic Performance using In-Wafer Advanced Kelvin-Contact Device Structure for High Performance CMOS LSIs (2008)
  • 著者名/発表者名: Rihito Kuroda
  • 学会等名: 2008 IEEE International Conference on Microelectronic Test Structures
  • 発表場所: Edinburgh(イギリス)
  • 年月日: 2008-03-26
• [学会発表] Improved High Temperature Characteristics in Accumulation-mode Fully Depleted SOI MOSFETs on Si(100) and (110) Surfaces (2008)
  • 著者名/発表者名: W. Cheng, A. Teramoto and T. Ohmi
  • 学会等名: PACIFIC RIM MEETING ON ELECTROCHEMICAL AND SOLID-STATE SCIENCE (PRiME2008)The Electrochemical Society, Meeting Abstracts,Abs.1868 CD-ROM
  • 発表場所: Honolulu, Hawaii
• [学会発表] Impact of Fully Depleted Silicon-On-Insulator Accumulation-mode CMOS on Si (110) (2008)
  • 著者名/発表者名: Ching Foa Tye, Weitao Cheng, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi
  • 学会等名: IEICE Technical Report SDM 2008-149~168, SDM-164, pp.51-55
• [学会発表] A Study on Very High Performance Novel Balanced FD-SOI CMOSFETs on Si(110) Using Accumulation Mode Device Structure for RF Analog Circuits (2008)
  • 著者名/発表者名: Weitao Cheng, Akinobu Teramoto, ChingFoa Tye, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro Ohmi
  • 学会等名: Extended Abstracts of the 2008 International Conference on SOLID STATE DEVICES AND MATERIALS, pp.876-877
  • 発表場所: Tsukuba
• [学会発表] Impact of Performance and Reliability Boosters in Novel FD-SOI CMOS Devices on Si(110) Surface for Analog Applications (2008)
  • 著者名/発表者名: Weitao Cheng, Akinobu Teramoto, Rihito Kuroda, ChingFoa Tye, Syuichi Watabe, Shigetoshi Sugawa, Tadahiro Ohmi
  • 学会等名: 29th International Conference on the Physics of Semiconductors (ICPS 2008), pp602-603
  • 発表場所: Brazil
• [学会発表] Different mechanism to explain the 1/f noise in n-and p-SOI-MOS transistors fabricated on (110) and (100) silicon oriented wafers (2008)
  • 著者名/発表者名: P. Gaubert, A. Teramoto, W. Cheng, T. Hamada, and T. Ohmi
  • 学会等名: 15th Workshop on Dielectrics in Microelectronics, pp151-152
  • 発表場所: Berlin
• [学会発表] A New Approach to Realize High Performance RF Power FETs on Si (110) Surface (2008)
  • 著者名/発表者名: W. Cheng, A. Teramoto, T. Ohmi
  • 学会等名: 2008 IEEE 39th Annual Power Electronics Specialists Conference, pp.3854-3856
  • 発表場所: Rhodes
• [学会発表] Impact of New Approach to Improve RF Power FETs Performance on Si (110) Surface (2008)
  • 著者名/発表者名: W. Cheng, A. Teramoto, T. Ohmi
  • 学会等名: 213th Meeting of The Electrochemical Society, No.659, CD-ROM
• [学会発表] Characterization of MOSFETs Intrinsic Performance using In-Wafer Advanced Kelvin-Contact Device Structure for High Performance CMOS LSIs (2008)
  • 著者名/発表者名: Rihito Kuroda, Akinobu Teramoto, Takanori Komuro, Weitao Cheng, Syunichi Watabe, Ching Foa Tye, Shigetoshi Sugawa, Tadahiro Ohmi
  • 学会等名: 2008 IEEE International Conference on Microelectronic Test Structures, pp.155-159
  • 発表場所: Edinburgh
• [学会発表] Performance Boost Using a New Device Structure Design for SOI MOSFETs Beyond 25nm Node (2007)
  • 著者名/発表者名: Weitao Cheng
  • 学会等名: 212th Meeting of The Electrochemical Society
  • 発表場所: Washington D.C.(アメリカ)
  • 年月日: 2007-10-10
• [学会発表] High Performance Accumulation Mode FD-SOI MOSFETs on Si (100) and (110) Surfaces (2007)
  • 著者名/発表者名: Weitao Cheng
  • 学会等名: 電子情報通信学会シリコン材料・デバイス研究会
  • 発表場所: Sendai
  • 年月日: 2007-10-05
• [学会発表] Modeling and Implementation of Subthreshold Characteristics of Accumulation-Mode MOSFETs for Various SOI Layer Thickness and Impurity Concentrations (2007)
  • 著者名/発表者名: Rihito Kuroda
  • 学会等名: 2007 IEEE International SOI Conference
  • 発表場所: Indian Wells(アメリカ)
  • 年月日: 2007-10-02
• [学会発表] Impact of the channel direction on the 1/f noise in SOI-MOSFETs fabricated on (100) and (110) silicon oriented wafers (2007)
  • 著者名/発表者名: Philippe Gaubert
  • 学会等名: 19th International Conference on NOISE AND FLUCTUATIONS-ICNF 2007
  • 発表場所: Tokyo
  • 年月日: 2007-09-11
• [学会発表] High Performance and highly reliable novel CMOS devices using accumulation mode multi-gate and fully depleted SOI MOSFETs (2007)
  • 著者名/発表者名: Weitao Cheng
  • 学会等名: 15th Biennial Conference on Insulating Films on Semiconductors
  • 発表場所: Athens(ギリシャ)
  • 年月日: 2007-06-20
• [学会発表] Impact of Improved Mobilities and Suppressed 1/f Noise in Fully Depleted SOI MOSFETs Fabricated on Si (110) Surface (2007)
  • 著者名/発表者名: Weitao Cheng
  • 学会等名: 211th Meeting of The Electrochemical Society
  • 発表場所: Chicago(アメリカ)
  • 年月日: 2007-05-08
• [学会発表] Hot Carrier Instability Mechanism in Accumulation-Mode Normally-off SOI nMOSFETs and Their Reliability Advantage (2007)
  • 著者名/発表者名: Rihito Kuroda
  • 学会等名: 211th Meeting of The Electrochemical Society
  • 発表場所: Chicago(アメリカ)
  • 年月日: 2007-05-08
• [学会発表] Modeling and Implementation of Subthreshold Characteristics of Accumulation-Mode MOSFETs for Various SOI Layer Thickness and Impurity Concentrations (2007)
  • 著者名/発表者名: Rihito Kuroda, Akinobu Teramoto, Cheng Weitao, Shigetoshi Sugawa, Tadahiro Ohmi
  • 学会等名: 2007 IEEE International SOI Conference, pp.55-56
  • 発表場所: Indian Wells, CA.
• [学会発表] Performance Boost Using a New Device Structure Design for SOI MOSFETs Beyond 25nm Node (2007)
  • 著者名/発表者名: W. Cheng, A. Teramoto, T. Ohmi
  • 学会等名: 212th Meeting of The Electrochemical Society, No.1309, CD-ROM
• [学会発表] High Performance Accumulation Mode FD-SOI MOSFETs on Si(100) and (110)Surfaces (2007)
  • 著者名/発表者名: W. Cheng, A. Teramoto, R. Kuroda, C. Tye, T. Suwa, T Goto, F Imaizumi, S, Sugawa, T. Ohmi
  • 学会等名: IEICE Technical Report SDM 2007-187, pp.45-48
• [学会発表] Impact of the channel direction on the 1/f noise in SOI - MOSFETs fabricated on (100) and (110) silicon oriented wafers (2007)
  • 著者名/発表者名: P. Gaubert, W. Cheng, A. Teramoto, T. Ohmi
  • 学会等名: AIP Conference Proceedings 19th International Conference on NOISE AND FLUCTUATIONS-ICNF2007, pp.43-46
  • 発表場所: Tokyo
• [学会発表] High Performance and highly reliable novel CMOS devices using accumulation mode multi-gate and fully depleted SOI MOSFETs (2007)
  • 著者名/発表者名: W. Cheng, A. Teramoto, R. Kuroda, M. Hirayama, T.Ohmi
  • 学会等名: Infos2007 Proceedings of the 15th Biennial Conference on Insulating Films on Semiconductors, pp.2105-2108
• [学会発表] Hot Carrier Instability Mechanism in Accumulation-Mode Normally-off SOI nMOSFETs and Their Reliability Advantage (2007)
  • 著者名/発表者名: Rihito Kuroda, Akinobu Teramoto, Weitao Cheng, Shigetoshi Sugawa, Tadahiro Ohmi
  • 学会等名: 211th Meeting of The Electrochemical Society, No.719, CD-ROM
• [学会発表] Impact of Improved Mobilities and Suppressed 1/f Noise in Fully Depleted SOI MOSFETs Fabricated on Si(110) Surface (2007)
  • 著者名/発表者名: W. Cheng, A. Teramoto, C. Tye, P. Gaubert, M. Hirayama, S. Sugawa, T. Ohmi
  • 学会等名: 211th Meeting of The Electrochemical Society, No.717, CD-ROM