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その場観察法によるシリコンの融液成長メカニズムの解明

研究課題

研究課題/領域番号 19J11516
研究種目

特別研究員奨励費

配分区分補助金
応募区分国内
審査区分 小区分30010:結晶工学関連
研究機関東北大学

研究代表者

胡 寛侃  東北大学, 理学研究科, 特別研究員(DC2)

研究期間 (年度) 2019-04-25 – 2021-03-31
研究課題ステータス 中途終了 (2020年度)
配分額 *注記
1,700千円 (直接経費: 1,700千円)
2020年度: 800千円 (直接経費: 800千円)
2019年度: 900千円 (直接経費: 900千円)
キーワードCrystal growth / Silicon / Grain boundary / In situ observation / Groove / Twining / Crystal growth from melt / grain boundary / Crystal/melt interface / Twin boundary
研究開始時の研究の概要

Aiming to low cost and high efficiency crystalline Si based solar cells for photo-voltaic application, the fundamental understanding of crystal growth from melt is very important. We focus on the crystal/melt interface and its dynamic to obtain valuable information to develop new crystal technology.

研究実績の概要

Multicrystalline silicon (mc-Si) grown by directional solidification is widely used in photovoltaic applications because it is very cost-effective. The photovoltaic properties of mc-Si are strongly dependent on its grain size, crystallographic orientation, and the presence of defects. In recent years, many techniques e.g. mono-like silicon, dendritic casting growth and high performance mc-Si techniques had been developed to get a mc-Si ingot with low defect density. However, there still exist large and internal challenges related to: the control of nucleation, twinning occurrence, grain competition, defect generation and their evolution during growth. As a consequence, further understanding of the crystal growth mechanism from melt is needed to increase the competitiveness of those processes and to reach an efficient mass production.
We experimentally study the directional growth of pure silicon from its melt using in situ observation system and particularly, on the evolution of crystal/melt interface to investigate multicrystalline silicon growth mechanism. Furthermore, the grain structure information e.g. the grain orientations and grain boundaries types was performed through electron backscattering diffraction (EBSD). The in situ observation data and the character of solidified crystal give complementary information on the grain structure and defects occurring during the process. We focus on the growing crystal/melt interface, grain boundary development and twinning occurrence, aiming at deepening the fundamental understanding during the silicon crystal growth.

現在までの達成度 (段落)

令和2年度が最終年度であるため、記入しない。

今後の研究の推進方策

令和2年度が最終年度であるため、記入しない。

報告書

(2件)
  • 2020 実績報告書
  • 2019 実績報告書
  • 研究成果

    (5件)

すべて 2020 2019

すべて 雑誌論文 (2件) (うち査読あり 2件) 学会発表 (3件) (うち国際学会 1件)

  • [雑誌論文] In situ observation of multiple parallel (1 1 1) twin boundary formation from step-like grain boundary during Si2020

    • 著者名/発表者名
      Kuan-Kan Hu, Kensaku Maeda, Haruhiko Morito, Keiji Shiga, Kozo Fujiwara.
    • 雑誌名

      Applied Physics Express

      巻: 13 号: 10 ページ: 105501-105501

    • DOI

      10.35848/1882-0786/abb57d

    • 関連する報告書
      2020 実績報告書
    • 査読あり
  • [雑誌論文] The effect of grain boundaries on instability at the crystal/melt interface during the unidirectional growth of Si2019

    • 著者名/発表者名
      Kuan-Kan Hu、Kensaku Maeda、Keiji Shiga、Haruhiko Morito、Kozo Fujiwara
    • 雑誌名

      Materialia

      巻: 7 ページ: 100386-100386

    • DOI

      10.1016/j.mtla.2019.100386

    • 関連する報告書
      2019 実績報告書
    • 査読あり
  • [学会発表] The effect of grain boundaries on instability at the crystal/melt interface during the unidirectional growth of Si2019

    • 著者名/発表者名
      Kuan-Kan Hu, Kensaku Maeda, Keiji Shiga, Haruhiko Morito, Kozo Fujiwara
    • 学会等名
      165th Japan Institute of Metals and Materials Annual Autumn Meeting
    • 関連する報告書
      2019 実績報告書
  • [学会発表] Instability at grain boundary included crystal/melt Interface during Si solidification2019

    • 著者名/発表者名
      Kuan-Kan Hu, Kensaku Maeda, Keiji Shiga, Haruhiko Morito, Kozo Fujiwara
    • 学会等名
      48th Japan Conference on Crystal Growth
    • 関連する報告書
      2019 実績報告書
  • [学会発表] The effect of grain boundaries on instability at the crystal/melt interface during the unidirectional growth of Si2019

    • 著者名/発表者名
      Kuan-Kan Hu, Kensaku Maeda, Keiji Shiga, Haruhiko Morito, Kozo Fujiwara
    • 学会等名
      19th International Conference on Crystal Growth and Epitaxy
    • 関連する報告書
      2019 実績報告書
    • 国際学会

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公開日: 2019-05-29   更新日: 2024-03-26  

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