| 研究課題/領域番号 |
19K05204
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| 研究種目 |
基盤研究(C)
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| 配分区分 | 基金 |
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| 応募区分 | 一般 |
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| 審査区分 |
小区分28030:ナノ材料科学関連
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| 研究機関 | 北陸先端科学技術大学院大学 |
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研究代表者 |
フロランス アントワーヌ 北陸先端科学技術大学院大学, 先端科学技術研究科, 講師 (30628821)
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| 研究期間 (年度) |
2019-04-01 – 2024-03-31
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| 研究課題ステータス |
交付 (2022年度)
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| 配分額 *注記 |
4,290千円 (直接経費: 3,300千円、間接経費: 990千円)
2021年度: 1,300千円 (直接経費: 1,000千円、間接経費: 300千円)
2020年度: 1,430千円 (直接経費: 1,100千円、間接経費: 330千円)
2019年度: 1,560千円 (直接経費: 1,200千円、間接経費: 360千円)
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| キーワード | silicene / exfoliation / hexagonal boron nitride / zirconium diboride / e-beam lithography / SOI / Silicene |
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| 研究開始時の研究の概要 |
the stability in air of h-BN-encapsulated silicene on ZrB2 thin film will be used to explore methods to fabicate silicene-based devices by exfoliating silicene layers from the ZrB2 thin film, transfering these layers to an insulating substrate, passivating the transferred silicene to prevent its oxidation and implementing electrical contacts.
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| 研究実績の概要 |
Improving the patterning of zirconium diboride thin film by e-beam lithography process was investigated by means of characterzation of patterned thin films with various techniques.
These characterizations pointed out that phosphoric acid (H3PO4) is a suitable etchant compared to other usual etchants like HF. However, etching at room temperature was found to be slow and to results into overetching below the edges of the photoresist. These investigations gave precious insights into the dimensions and the aspect ratio of the ribbons that can be realized through e-beam lithography.
These characterizations also demonstrate that any of the steps of e-beam lithography does not affect the surface of zirconium diboride thin films which is of first importance to make possible the growth of silicene.
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| 現在までの達成度 (区分) |
現在までの達成度 (区分)
3: やや遅れている
理由
One important step of the project is the growth of h-BN-encapsulated silicene on zirconium diboride thin films grown on SOI. It has been decided to implement a nitrogen plasma source and a silicon source on the system in which they are grown. The possibility of preparing h-BN-encasulated silicene sheets on zirconium diboride in a same system will represent a significant gain of time. More importantly, this would make possible the fabrication of large scale samples (10 x 20 mm2 instead of 1 x 10 mm2 up to now). This will also make possible the realization of h-BN-encapsulated silicene sheets on zirconium diboride thin films patterned by electron-beam lithography without requiring the cutting of the sample after the patterning, which can cause damages.
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| 今後の研究の推進方策 |
The objective of the experimental work for the last year of the project is to achieve three main steps.
(1): the growth of large scale h-BN-encapsulated silicene sheets on zirconium diboride thin film grown on SOI substrates. This will require the implementation of a nitrogen plasma source and a silicon source.
(2): The exfoliation of h-BN-encapsulated silicene sheets in the inert environment of a glovebox through the scotch tape method or through the chemical etching of the oxide layer of the SOI substrate. After exfoliation, h-BN-encapsulated silicene sheets will be transfered to a selected substrate.
(3): Sucesfully patterning of ZrB2 thin films grown on SOI to permit the realization of h-BN-encapsulated silicene sheets with the same pattern, that can then be exfoliated and transfered.
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