| 研究課題/領域番号 |
19K05204
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| 研究種目 |
基盤研究(C)
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| 配分区分 | 基金 |
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| 応募区分 | 一般 |
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| 審査区分 |
小区分28030:ナノ材料科学関連
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| 研究機関 | 北陸先端科学技術大学院大学 |
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研究代表者 |
フロランス アントワーヌ 北陸先端科学技術大学院大学, 先端科学技術研究科, 特任准教授 (30628821)
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| 研究期間 (年度) |
2019-04-01 – 2024-03-31
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| 研究課題ステータス |
中途終了 (2023年度)
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| 配分額 *注記 |
4,290千円 (直接経費: 3,300千円、間接経費: 990千円)
2021年度: 1,300千円 (直接経費: 1,000千円、間接経費: 300千円)
2020年度: 1,430千円 (直接経費: 1,100千円、間接経費: 330千円)
2019年度: 1,560千円 (直接経費: 1,200千円、間接経費: 360千円)
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| キーワード | silicene / exfoliation / transfer / h-BN / ZrB2 / silicon-on-insulator / hexagonal boron nitride / zirconium diboride / e-beam lithography / SOI / Silicene |
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| 研究開始時の研究の概要 |
the stability in air of h-BN-encapsulated silicene on ZrB2 thin film will be used to explore methods to fabicate silicene-based devices by exfoliating silicene layers from the ZrB2 thin film, transfering these layers to an insulating substrate, passivating the transferred silicene to prevent its oxidation and implementing electrical contacts.
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| 研究実績の概要 |
While the initial project was considering mechanical methods to exfoliate and transfer silicene/h-BN bilayer from the ZrB2 thin film it was grown on, an other approach was found to be more suitable: the exfoliation through a wet process: The ZrB2 thin film is grown on the silicon membrane of silicon on insulator substrate, which can then be exfoliated through the chemical etching of the oxide layer by a solution of hydrofluoride.
An other part of the project was the patterning of the silicene/h-BN bilayer through the patterning by e-beam lithography of the ZrB2 thin film before the formation of the bilayer. The possibility of this process involving the etching of the ZrB2 thin film by a solution of H3PO4, was demonstrated even though its conditions still need to be optimized.
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