| 研究課題/領域番号 |
19K15029
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| 研究種目 |
若手研究
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| 配分区分 | 基金 |
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| 審査区分 |
小区分21050:電気電子材料工学関連
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| 研究機関 | 東京理科大学 |
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研究代表者 |
カトリ イゾール 東京理科大学, 研究推進機構総合研究院, 助教 (50562740)
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| 研究期間 (年度) |
2019-04-01 – 2021-03-31
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| 研究課題ステータス |
中途終了 (2020年度)
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| 配分額 *注記 |
4,160千円 (直接経費: 3,200千円、間接経費: 960千円)
2021年度: 1,040千円 (直接経費: 800千円、間接経費: 240千円)
2020年度: 1,300千円 (直接経費: 1,000千円、間接経費: 300千円)
2019年度: 1,820千円 (直接経費: 1,400千円、間接経費: 420千円)
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| キーワード | Defect physics / Admittance Spectroscopy / JVT / CIGS solar cell / Stability / Compound semicondutor / Metastable behaviors / Alkali-metal / Photo-devices / Electron Irradiation / Proton Irradiation / High-efficiency |
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| 研究開始時の研究の概要 |
Incorporation of heavier alkali-metals in the compound semiconductor materials is a promising method to improve device performance. However, the metastable behaviors of the device after alkali-metals incorporation for long-term application has not been well understood. Therefore, this work investigates the metastable behavior of alkali-metals incorporated semiconductor material and device (especially CIGS thin film and solar cells).
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| 研究実績の概要 |
Temperature-dependent current-voltage, admittance spectroscopy, capacitance-voltage measurements were performed on cesium fluoride (CsF)-treated CIGS solar cell before and after heat-light soaking (HLS) and subsequent heat-soaking (HS) treatments to analyse the defect and metastable properties of the device.
It was found that HLS treatment of CsF-treated CIGS solar cell formed cesium-induced defects for minority carrier recombination.
The admittance measurement showed a shift of the shallow energy position to a higher value after HLS and subsequent HS, which was due to the formation of a secondary diode toward the CIGS/molybdenum contact.
The low-temperature C-V measurement showed that HLS and subsequent HS treatment (HLS/HS) passivate IIICu anti-site defects.
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