| 研究課題/領域番号 |
20K14720
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| 研究種目 |
若手研究
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| 配分区分 | 基金 |
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| 審査区分 |
小区分21010:電力工学関連
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| 研究機関 | 京都先端科学大学 |
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研究代表者 |
Tripathi Ravi・Nath 京都先端科学大学, ナガモリアクチュエータ研究所, 助教 (00869745)
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| 研究期間 (年度) |
2020-04-01 – 2024-03-31
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| 研究課題ステータス |
交付 (2022年度)
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| 配分額 *注記 |
4,290千円 (直接経費: 3,300千円、間接経費: 990千円)
2022年度: 910千円 (直接経費: 700千円、間接経費: 210千円)
2021年度: 1,430千円 (直接経費: 1,100千円、間接経費: 330千円)
2020年度: 1,950千円 (直接経費: 1,500千円、間接経費: 450千円)
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| キーワード | Power device / Paralleling / SiC / GaN / Power Devices / Parallel Connection / Gate Control / Balancing / Active Balancing / Intelligent Control |
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| 研究開始時の研究の概要 |
The scientific and technological evolution of state-of- the-art devices since its inception has made a leap in power rating. This ultimately leads to extend the horizon for operating range of a single device considering blocking voltage and current capability. However, higher current/voltage ratings of power devices are required for high power conversion and control Enhancement and optimization of the performance of power semiconductor devices are of fundamental concern, especially for the system consisting of parallel/series connected devices.
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| 研究実績の概要 |
The intelligent balancing of the parallel connected power devices is explored considering the wide band gap power devices. Parallel connected SiC devices are controlled using the gate delay and gate compensation control with appropriate resolution that is capable of minimizing the unbalanced current.
Further, a hybrid switch ooncept is proposed and implemented considering a chopper circuit for the improved ruggedness and switching performance of the GaN and SiC switches. A parallel hybrid GaN and SiC switch with intelligent switching control technique using single gate driver solution, is demonstrated with improved system performance.
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| 現在までの達成度 (区分) |
現在までの達成度 (区分)
2: おおむね順調に進展している
理由
The two parallel connected SiC devices are explored with intelligent switching control operation , optimized and improved current balancing is successfully achieved with gate delay control and gate voltage control. Incorporating both control methodology , it is capable of achieving dynamic as well as static current sharing among the devices. Especially in case of SiC devices the unbalancing among the devices happen due to threshold voltage. SiC is capable of achieving static current balancing inherently , however this phenomenon works in the change in on resistance correspond to junction temperature. But change in junction temperature ultimately affects the threshold voltage. So in this case both dynamic and static current control is incorporated.
In addition a novel concept based on paralleling devices and intelligent control, a paralleled hybrid switch concept for SiC and GaN is proposed and implemented with validation on the dc-dc converter circuit.
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| 今後の研究の推進方策 |
Future plan is to explore the paralleling of Sic devices for four parallel switches to validate the proposed concept as well as to explore the intelligent balancing possibility for GaN devices as a separate
Project for the high speed switching and intelligent control
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