| 研究課題/領域番号 |
21F21045
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| 研究種目 |
特別研究員奨励費
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| 配分区分 | 補助金 |
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| 応募区分 | 外国 |
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| 審査区分 |
小区分29010:応用物性関連
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| 研究機関 | 東京大学 |
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研究代表者 |
中辻 知 東京大学, 大学院理学系研究科(理学部), 教授 (70362431)
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| 研究分担者 |
CHEN XIANZHE 東京大学, 理学(系)研究科(研究院), 外国人特別研究員
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| 研究期間 (年度) |
2021-04-28 – 2023-03-31
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| 研究課題ステータス |
完了 (2021年度)
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| 配分額 *注記 |
2,400千円 (直接経費: 2,400千円)
2021年度: 1,200千円 (直接経費: 1,200千円)
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| キーワード | antiferromagnets / TMR / nonvolatile memory |
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| 研究開始時の研究の概要 |
The main reason is the fact that large variations of density of states are difficult to realize. So far, the most successful demonstrations still work below 1%, which is far below the value necessary for commercial applications. Recently, the work in Nakatsuji's group shows the Neel vector in topological antiferromagnetic Mn3Sn can be rotated at least 60 deg by spin current, which indicates the possibility of achieving tunneling magnetoresistance via the spin-tunneling mechanism, similar to the case to ferromagnets.
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| 研究実績の概要 |
In FM/NM/FM trilayers (FM: ferromagnet, NM: nonmagnet), the change of relative orientation between the two FM moments could lead to varying opposition to the tunneling current flow: this tunneling magnetoresistance (TMR) is proportional to the spin polarization of FMs as is characterized by the Julliere’s model, and thus it is not usually seen in antiferromagnets with negligible spin polarization. Here, we demonstrate the existence of antiferromagnetic TMR in a magnetic octupole valve Mn3Sn/MgO/Mn3Sn, supported by the theory. Remarkably, although the spin polarization rate is three orders smaller than that of Fe, Mn3Sn/MgO/Mn3Sn shows 5 times larger TMR than Fe/MgO/Mn3S. This emphasizes the dominant role of octupole polarization, instead of spin polarization.
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| 現在までの達成度 (段落) |
翌年度、交付申請を辞退するため、記入しない。
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| 今後の研究の推進方策 |
翌年度、交付申請を辞退するため、記入しない。
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