| 研究課題/領域番号 |
21J11028
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| 研究種目 |
特別研究員奨励費
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| 配分区分 | 補助金 |
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| 応募区分 | 国内 |
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| 審査区分 |
小区分18020:加工学および生産工学関連
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| 研究機関 | 大阪大学 |
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研究代表者 |
LIU NIAN 大阪大学, 工学系研究科, 特別研究員(DC2)
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| 研究期間 (年度) |
2021-04-28 – 2023-03-31
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| 研究課題ステータス |
採択後辞退 (2022年度)
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| 配分額 *注記 |
1,500千円 (直接経費: 1,500千円)
2022年度: 700千円 (直接経費: 700千円)
2021年度: 800千円 (直接経費: 800千円)
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| キーワード | PAP / Single crystal diamond / Damage-free / Material removal rate / Isotropic removal / Anisotropic removal / Cathodoluminescence / Raman spectroscopy |
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| 研究開始時の研究の概要 |
Single crystal diamond (SCD) as an ideal material for the fabrication of electronic devices is difficult to process due to its high hardness and chemical inert. In this study, I will develop plasma assisted polishing (PAP) to realize the high-efficiency, high-quality and low-damage polishing of SCD.
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| 研究実績の概要 |
A single crystal diamond (SCD) substrate is processed by plasma-assisted polishing (PAP) using four types of polishing plates, the quartz glass is the most suitable to obtain an atomically smooth surface with high material removal rate.
As the polishing pressure applied to the SCD substrate varied, the isotropic chemical removal action was dominant when the PAP was performed at low polishing pressures such as 62.5 kPa, whereas the anisotropic mechanically induced removal action was dominant when the PAP was performed at high polishing pressures such as 350.0 kPa. In contrast, changing the sliding speed between the polishing plate and the SCD substrate did not affect the material removal mechanism of PAP.
PAP was damage-free when applied to the polishing of SCD substrate.
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| 現在までの達成度 (段落) |
翌年度、交付申請を辞退するため、記入しない。
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| 今後の研究の推進方策 |
翌年度、交付申請を辞退するため、記入しない。
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