| 研究課題/領域番号 |
21K20343
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| 研究種目 |
研究活動スタート支援
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| 配分区分 | 基金 |
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| 審査区分 |
0202:物性物理学、プラズマ学、原子力工学、地球資源工学、エネルギー学およびその関連分野
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| 研究機関 | 東北大学 |
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研究代表者 |
CHUANG LUCHUNG 東北大学, 金属材料研究所, 助教 (90911123)
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| 研究期間 (年度) |
2021-08-30 – 2023-03-31
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| 研究課題ステータス |
完了 (2022年度)
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| 配分額 *注記 |
2,990千円 (直接経費: 2,300千円、間接経費: 690千円)
2022年度: 1,430千円 (直接経費: 1,100千円、間接経費: 330千円)
2021年度: 1,560千円 (直接経費: 1,200千円、間接経費: 360千円)
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| キーワード | Crystal growth / In situ observation / Silicon / Grain boundary / Solid/melt interface |
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| 研究開始時の研究の概要 |
Multi-crystalline materials are widely used in electronic devices and mechanical parts. The growth behaviors of GBs influences the final boundary distribution, and consequently determines the performance of the material. This research attempts to solved a long-standing mystery about the GB evolution during growth by directly observing the growth of individual GBs. Si, by the virtue of ubiquitous applications and abundant background knowledge, is chosen as the target material.
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| 研究成果の概要 |
Experimental methods have been established for studying growth behavior of grain boundaries (GBs). Symmetric Σ9 GBs with large deviation, that means high interfacial energy, were found developing interfacial grooves during solidification. Whereas perfect Σ9 GBs did not develop groove at interface.
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| 研究成果の学術的意義や社会的意義 |
Findings of this research contribute to the knowledge of interfacial morphology and kinetics of growing grain boundaries, which are the major defect determining the properties of multicrystalline materials. Most of the materials in our daily life are multicrystalline.
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