原子オーダ平坦な界面を有する３次元立体構造トランジスタの製造プロセスに関する研究

• 研究課題/領域番号: 22000010
• 研究種目: 特別推進研究
• 配分区分: 補助金
• 審査区分: 理工系; 工学
• 研究機関: 東北大学
• 研究代表者: 大見 忠弘 東北大学, 未来科学技術共同研究センター, 名誉教授 (20016463)
• 研究分担者: 平山 昌樹 東北大学, 未来科学技術共同研究センター, 准教授 (70250701) ; 後藤 哲也 東北大学, 未来科学技術共同研究センター, 准教授 (00359556) ; 諏訪 智之 東北大学, 未来科学技術共同研究センター, 助教 (70431541)
• 研究期間 (年度): 2010-04-21 – 2015-03-31
• 研究課題ステータス: 完了 (2014年度)
• 配分額: 616,720千円 (直接経費: 474,400千円、間接経費: 142,320千円); 2014年度: 62,790千円 (直接経費: 48,300千円、間接経費: 14,490千円); 2013年度: 67,860千円 (直接経費: 52,200千円、間接経費: 15,660千円); 2012年度: 78,650千円 (直接経費: 60,500千円、間接経費: 18,150千円); 2011年度: 213,330千円 (直接経費: 164,100千円、間接経費: 49,230千円); 2010年度: 194,090千円 (直接経費: 149,300千円、間接経費: 44,790千円)
• キーワード: シリコン / MOSFET / LSI / 半導体製造プロセス / 半導体製造装置 / MOSトランジスタ / シリコン表面平坦化 / プラズマプロセス / 面方位 / ラフネス / シリサイド / 3次元構造

研究成果の概要

本研究では、任意のシリコン表面を原子スケールで平坦化するシリコン表面平坦化技術の開発に成功し、MOSデバイスの信頼性を劇的に向上させた。本技術により、ゲート絶縁膜とシリコンの界面が原子オーダで平坦になされた3次元立体構造MOSトランジスタ製造への道が拓けた。本研究の成果は、シリコン結晶の有する全性能を駆使した、超低消費電力・超高速動作CMOSシリコンLSIの創出に大きく貢献するものである。

評価記号

検証結果 (区分)

A-

研究成果

• [雑誌論文] Atomically flattening of Si surface of silicon on insulator and isolation-patterned wafers (2015)
  • 著者名/発表者名: Tetsuya Goto, Rihito Kuroda, Naoya Akagawa, Tomoyuki Suwa, Akinobu Teramoto, Xiang Li, Toshiki Obara, Daiki Kimoto, Shigetoshi Sugawa, Tadahiro Ohmi, Yutaka Kamata, Yuki Kumagai, and Katsuhiko Shibusawa
  • 雑誌名: Japanese Journal of Applied Physics 巻: 54 号: 4S ページ: 04DA04-04DA04
  • DOI: 10.7567/jjap.54.04da04
  • NAID: 210000144951
  • 査読あり
• [雑誌論文] Effect of Composition Ratio on Erbium Silicide Work Function on Different Morphology of Si(100) Surface Changed by Alkaline Etching (2014)
  • 著者名/発表者名: Hiroaki Tanaka, Tomoyuki Suwa, Akinobu Teramoto, Tsukasa Motoya, Shigetoshi Sugawa, and Tadahiro Ohmi
  • 雑誌名: ECS Transactions 巻: 61 号: 3 ページ: 47-53
  • DOI: 10.1149/06103.0047ecst
  • 査読あり
• [雑誌論文] Flattening Technique of (551) Silicon Surface Using Xe/H2 Plasma (2014)
  • 著者名/発表者名: Tomoyuki Suwa, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi
  • 雑誌名: ECS Transactions 巻: 61 号: 2 ページ: 401-407
  • DOI: 10.1149/06102.0401ecst
  • 査読あり
• [雑誌論文] Carrier Mobility Characteristics of (100), (110), and (551) Oriented Atomically Flattened Si Surfaces for Fin Structure Design of Multi-gate Metal-Insulator-Silicon Field-Effect Transistors (2014)
  • 著者名/発表者名: Rihito Kuroda, Yukihisa Nakao, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi
  • 雑誌名: Japanese Journal of Applied Physics 巻: 53 号: 4S ページ: 04EC04-04EC04
  • DOI: 10.7567/jjap.53.04ec04
  • NAID: 210000143558
  • 査読あり
• [雑誌論文] Schottky Barrier Height Between Erbium Silicide and Various Morphology of Si (100) Surface Changed by Alkaline Etching (2013)
  • 著者名/発表者名: Hiroaki Tanaka, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi
  • 雑誌名: ECS Transactions 巻: 58 号: 7 ページ: 349-354
  • DOI: 10.1149/05807.0349ecst
  • 査読あり
• [雑誌論文] A Test Circuit for Extremely Low Gate Leakage Current Measurement of 10 aA for 80 000 MOSFETs in 80 s (2013)
  • 著者名/発表者名: Takuya Inatsuka, Yuki Kumagai, Rihito Kuroda, Akinobu Teramoto, Tomoyuki Suwa, Shigetoshi Sugawa, and Tadahiro Ohmi
  • 雑誌名: IEEE Transactions on Semiconductor Manufacturing 巻: 26 号: 3 ページ: 288-295
  • DOI: 10.1109/tsm.2013.2260568
  • 査読あり
• [雑誌論文] l/f noise of accumulation mode p-and n-MOSFETs (2013)
  • 著者名/発表者名: Philippe Gaubert, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi
  • 雑誌名: Proceedings of 22nd International Conference on Noise and Fluctuations 巻: 1 ページ: 26-29
  • DOI: 10.1109/icnf.2013.6578879
  • 査読あり
• [雑誌論文] Angle-resolved photoelectron spectroscopy study on interfacial transition layer and oxidation-induced residual stress in Si (100) substrate near the interface (2013)
  • 著者名/発表者名: Tomoyuki Suwa, Akinobu Teramoto, Kohki Nagata, Atsushi Ogura, Hiroshi Nohira, Takayuki Muro, Toyohiko Kinoshita, Shigetoshi Sugawa, Tadahiro Ohmi, and Takeo Hattori
  • 雑誌名: Microelectronic Engineering 巻: 109 ページ: 197-199
  • DOI: 10.1016/j.mee.2013.03.004
  • 査読あり
• [雑誌論文] Effect of Composition Rate on Erbium Silicide Work Function on Different Silicon Surface Orientation (2013)
  • 著者名/発表者名: Hiroaki Tanaka, Akinobu Teramoto, Tsukasa Motoya, Shigetoshi Sugawa, and Tadahiro Ohmi
  • 雑誌名: ECS Transactions 巻: 53 号: 1 ページ: 343-350
  • DOI: 10.1149/05301.0343ecst
  • 査読あり
• [雑誌論文] Chemical Structure of Interfacial Transition Layer Formed on Si(100) and Its Dependence on Oxidation Temperature, Annealing in Forming Gas, and Difference in Oxidizing Species (2013)
  • 著者名/発表者名: Tomoyuki Suwa
  • 雑誌名: Japanese Journal of Applied Physics 巻: 52 号: 3R ページ: 031302-031302
  • DOI: 10.7567/jjap.52.031302
  • NAID: 40019616826
  • 査読あり
• [雑誌論文] Effect of Erbium Silicide Crystallinity for Low Barrier Contact between Erbium Silicide and n-type Silicon (2012)
  • 著者名/発表者名: Hiroaki Tanaka
  • 雑誌名: ECS Transactions 巻: 50 ページ: 343-348
  • 査読あり
• [雑誌論文] Comprehensive Study on Chemical Structures of Compositional Transition Layer at SiO2/Si(100) Interface (2012)
  • 著者名/発表者名: Tomoyuki Suwa
  • 雑誌名: ECS Transactions 巻: 50 ページ: 313-318
  • 査読あり
• [雑誌論文] Electrical Properties of Silicon Nitride Using High Density and Low Plasma Damage PECVD Formed at 400℃ (2012)
  • 著者名/発表者名: Yukihisa Nakao
  • 雑誌名: ECS Transactions 巻: 50 ページ: 421-428
  • 査読あり
• [雑誌論文] Low Work Function between Erbium Silicide and n-type Silicon Controlled by Cap Film Stress (2012)
  • 著者名/発表者名: Hiroaki Tanaka
  • 雑誌名: ECS Transactions 巻: 45 ページ: 371-378
  • 査読あり
• [雑誌論文] Influence of Forming Gas Annealing on SiO2/Si(100) Interface Structures Formed Utilizing Oxygen Molecules Different From That Utilizing Oxygen Radicals (2012)
  • 著者名/発表者名: Tomoyuki Suwa
  • 雑誌名: ECS Transactions 巻: 45 ページ: 453-460
  • 査読あり
• [雑誌論文] Hole Mobility in Accumulation Mode Metal-Oxide-Semiconductor Field-Effect Transistors (2012)
  • 著者名/発表者名: Philippe Gaubert
  • 雑誌名: Japanese Journal of Applied Physics 巻: 51 号: 4S ページ: 04DC07-04DC07
  • DOI: 10.1143/jjap.51.04dc07
  • 査読あり
• [雑誌論文] On the Interface Flattening Effect and Gate Insulator Breakdown Characteristic of Radical Reaction Based Insulator Formation Technology (2012)
  • 著者名/発表者名: Rihito Kuroda
  • 雑誌名: Japanese Journal of Applied Physics 巻: 51
  • 査読あり
• [雑誌論文] Highly Reliable Radical SiO_2 Films on Atomically Flat Silicon Surface Formed by Low Temperature Pure Ar Annealing (2011)
  • 著者名/発表者名: Xiang Li
  • 雑誌名: Japanese Journal of Applied Physics 巻: 50
  • 査読あり
• [雑誌論文] Different Properties of Erbium suicides on Si(100) and Si(551) Orientation Stirfaces (2011)
  • 著者名/発表者名: Hiroaki Tanaka
  • 雑誌名: ECS Transactions 巻: 41 ページ: 365-373
  • 査読あり
• [雑誌論文] Gate SiO_2 Film Integrity on Ultra-Pure Argon Anneal (100) Silicon Surface (2011)
  • 著者名/発表者名: Akinobu Teramoto
  • 雑誌名: ECS Transactions 巻: 41 ページ: 147-156
  • 査読あり
• [雑誌論文] Science-based New Silicon Technologies Exhibiting Super High Performance due to Radical-reaction-based Semiconductor Manufacturing (2011)
  • 著者名/発表者名: Tadahiro Ohmi
  • 雑誌名: Journal of the Korean Physical Society 巻: 59 ページ: 391-401
  • 査読あり
• [雑誌論文] Formation speed of atomically flat surface on Si(100) in ultra-pure argon (2011)
  • 著者名/発表者名: Xiang Li
  • 雑誌名: Microelectronic Engineering 巻: 88 ページ: 3133-3139
  • 査読あり
• [雑誌論文] Clear Difference between the Chemical Structure of SiO_2/Si Interfaces Formed Using Oxygen Radicals versus Oxygen Molecules (2011)
  • 著者名/発表者名: Tomoyuki Suwa
  • 雑誌名: ECS Transactions 巻: 35 ページ: 115-122
  • 査読あり
• [雑誌論文] Pr_3Si_6N_<11>/Si_3N_4 Stacked High-k Gate Dielectrics with High Quality Ultrathin Si_3N_4 Interfacial Layers (2011)
  • 著者名/発表者名: Tadahiro Ohmi
  • 雑誌名: ECS Transactions 巻: 35 ページ: 275-284
  • 査読あり
• [雑誌論文] Impact of Channel Direction Dependent Low Field Hole Mobility on (100) Orientation Silicon Surface (2011)
  • 著者名/発表者名: Rihito Kuroda
  • 雑誌名: Japanese Journal of Applied Physics 巻: 50
  • 査読あり
• [雑誌論文] Low Contact Resistivity with Low Silicide/p^+-Silicon Schottky Barrier for High-Performance p-Channel Metal-Oxide-Silicon Field Effect Transistors (2010)
  • 著者名/発表者名: Hiroaki Tanaka, Tatsunori Isogai, Tetsuya Goto, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi
  • 雑誌名: Japanese Journal of Applied Physics 巻: 49
  • NAID: 210000068161
  • 査読あり
• [雑誌論文] Crystallographic orientation dependence of compositional transition and valence band offset at SiO_2/Si interface formed using oxygen radicals (2010)
  • 著者名/発表者名: T.Suwa, A.Teramoto, Y.Kumagai, K.Abe, X.Li, Y.Nakao, M.Yamamoto, Y.Kato, T.Muro, T.Kinoshita, T.Ohmi, T.Hattori
  • 雑誌名: Journal of Applied Physics Letters 巻: 96 ページ: 173103-173104
  • NAID: 110008106358
  • 査読あり
• [雑誌論文] Impact of Work Function Optimized S/D Silicide Contact for High Current Drivability CMOS (2010)
  • 著者名/発表者名: Y.Nakao, R.Kuroda, H.Tanaka, T.Isogai, A.Teramoto, S.Sugawa, T.Ohmi
  • 雑誌名: ECS Transactions 巻: 28 ページ: 315-324
  • 査読あり
• [雑誌論文] Atomically Flattening Technology at 850℃ for Si(100) Surface (2010)
  • 著者名/発表者名: X.Li, T.Suwa, A.Teramoto, R.Kuroda, S.Sugawa, T.Ohmi
  • 雑誌名: ECS Transactions 巻: 28 ページ: 299-309
  • 査読あり
• [雑誌論文] Relation Between the Mobility, 1/f Noise, and Channel Direction in MOSFETs Fabricated on (100) and (110) Silicon-Oriented Wafers (2010)
  • 著者名/発表者名: Philippe Gaubert, Akinobu Teramoto, Weitao Cheng, Tadahiro Ohmi
  • 雑誌名: IEEE Transactions on Electron Devices 巻: 57 ページ: 1597-1607
  • 査読あり
• [学会発表] 応用物理学会優秀論文賞受賞記念講演"Chemical Structure of Interfacial Transition Layer Formed on Si(100) and Its Dependence on Oxidation Temperature, Annealing in Forming Gas, and Difference in Oxidizing Species" (2014)
  • 著者名/発表者名: 諏訪智之、寺本章伸、熊谷勇喜、阿部健一、李翔、中尾幸久、山本雅士、野平博司、室隆桂之、木下豊彦、須川成利、大見忠弘、服部健雄
  • 学会等名: 第75回応用物理学会秋季学術講演会
  • 発表場所: 北海道大学, 札幌
  • 年月日: 2014-09-19
• [学会発表] Atomically Flattening of Si Surface of SOI and Isolation-patterned Wafers (2014)
  • 著者名/発表者名: T. Goto, R. Kuroda, N. Akagawa, T. Suwa, A. Teramoto, X. Li, S. Sugawa, T. Ohmi, Y. Kumagai, Y. Kamata, and K. Sibusawa
  • 学会等名: The 2014 International Conference on Solid State Devices and Materials
  • 発表場所: Tsukuba International Congress Center, つくば
  • 年月日: 2014-09-09
• [学会発表] Flattening Technique of (551) Silicon Surface Using Xe/H2 Plasma (2014)
  • 著者名/発表者名: Tomoyuki Suwa, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi
  • 学会等名: 225th Meeting of The Electrochemical Society
  • 発表場所: Hilton Orlando Bonnet Creek, Orlando, USA
  • 年月日: 2014-05-14
• [学会発表] Effect of Composition Ratio on Erbium Silicide Work Function on Different Morphology of Si(100) Surface Changed by Alkaline Etching (2014)
  • 著者名/発表者名: Hiroaki Tanaka, Tomoyuki Suwa, Akinobu Teramoto, Tsukasa Motoya, Shigetoshi Sugawa, and Tadahiro Ohmi
  • 学会等名: 225th Meeting of The Electrochemical Society
  • 発表場所: Hilton Orlando Bonnet Creek, Orlando, USA
  • 年月日: 2014-05-13
• [学会発表] Schottky barrier height between erbium silicide and various morphology of Si (100) surface changed by alkaline etching (2013)
  • 著者名/発表者名: H. Tanaka, A. Teramoto, S. Sugawa, T. Ohmi
  • 学会等名: 224th Meeting of The Electrochemical Society
  • 発表場所: San Francisco, USA
  • 年月日: 2013-10-29
• [学会発表] Detection of oxidation-induced compressive stress in Si (100) substrate near the SiO2/Si interface with atomic-scale resolution (2013)
  • 著者名/発表者名: T. Suwa, K. Nagata, H. Nohira, K. Nakajima, A. Teramoto, A. Ogura, K. Kimura, T. Muro, T. Kinoshita, S. Sugawa, T. Hattori, T. Ohmi
  • 学会等名: The 2013 International Conference on Solid State Devices and Materials
  • 発表場所: Fukuoka, Japan
  • 年月日: 2013-09-26
• [学会発表] Carrier Mobility on (100), (110), and (551) Oriented Atomically Flattened Si Surfaces for Multi-gate MOSFETs Device Design (2013)
  • 著者名/発表者名: Rihito Kuroda, Yukihisa Nakao, Akinobu Teramoto, Shigetoshi Sugawa and Tadahiro Ohmi
  • 学会等名: The 2013 International Conference on Solid State Devices and Materials
  • 発表場所: Fukuoka, Japan
  • 年月日: 2013-09-25
• [学会発表] Angle-Resolved Photoelectron Spectroscopy Study on Interfacial Transition Layer and Oxidation-Induced Residual Stress in Si (100) Substrate Near the Interface (2013)
  • 著者名/発表者名: T. Suwa, A. Teramoto, K. Nagata, A. Ogura, T. Muro, T. Kinoshita, T. Ohmi, and T. Hattori
  • 学会等名: 18th Conference of "Insulating Films on Semiconductors"
  • 発表場所: Cracow, Poland
  • 年月日: 2013-06-26
• [学会発表] Effect of composition rate on erbium silicide work function on different silicon surface orientation (2013)
  • 著者名/発表者名: H. Tanaka, A. Teramoto, T. Motoya, S. Sugawa, T. Ohmi
  • 学会等名: 223rd Meeting of The Electrochemical Society
  • 発表場所: Toronto, Canada
  • 年月日: 2013-05-15
• [学会発表] 1/f noise of accumulation mode p- and n-MOSFETs (2013)
  • 著者名/発表者名: Philippe Gaubert, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi
  • 学会等名: 22nd International Conference on Noise and Fluctuations
  • 発表場所: Montpellier, France
• [学会発表] Radical Oxidation and Radical Nitridation for High Integrity Gate Insulator Films on Any Crystal Orientation Silicon Surface for Super High Performance 3D MOS Transistors (2012)
  • 著者名/発表者名: Tadahiro Ohmi
  • 学会等名: 2012 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES
  • 発表場所: Shanghai, China(招待講演)
  • 年月日: 2012-03-18
• [学会発表] Different properties of erbium silicides on Si(100) and Si(551) orientation surfaces (2011)
  • 著者名/発表者名: Hiroaki Tanaka
  • 学会等名: 220th Meeting of The Electrochemical Society
  • 発表場所: Boston, USA
  • 年月日: 2011-10-13
• [学会発表] Gate SiO_2 Film Integrity on Ultra-Pure Argon Anneal (100) Silicon Surface (2011)
  • 著者名/発表者名: Akinobu Teramoto
  • 学会等名: 220th Meeting of The Electrochemical Society
  • 発表場所: Boston, USA
  • 年月日: 2011-10-10
• [学会発表] High Quality and Low Thermal Budget Silicon Nitride Deposition Using PECVD for Gate Spacer, Silicide Block and Contact Etch Stopper (2011)
  • 著者名/発表者名: Yukihisa Nakao
  • 学会等名: 2011 International Conference on SOLID STATE DEVICES AND MATERIALS
  • 発表場所: Nagoya
  • 年月日: 2011-09-29
• [学会発表] On the Si Surface Flattening Effect and Gate Insulator Breakdown Characteristic of Radical Reaction Based Insulator Formation Technology (2011)
  • 著者名/発表者名: Rihito Kuroda
  • 学会等名: 2011 International Conference on SOLID STATE DEVICES AND MATERIALS
  • 発表場所: Nagoya
  • 年月日: 2011-09-29
• [学会発表] Clear Difference between Chemical Structure of SiO_2/Si Interface Formed Using Oxygen Radicals and That Formed Using Oxygen Molecules (2011)
  • 著者名/発表者名: Tomoyuki Suwa
  • 学会等名: 2011 International Conference on SOLID STATE DEVICES AND MATERIALS
  • 発表場所: Nagoya
  • 年月日: 2011-09-29
• [学会発表] Science Based New Silicon Technologies Exhibiting Super High Speed Performance Over 100GHz Clock Rate (2011)
  • 著者名/発表者名: Tadahiro Ohmi
  • 学会等名: 30^<th> Electronic Materials Symposium
  • 発表場所: Shiga(招待講演)
  • 年月日: 2011-06-29
• [学会発表] Pr_3Si_6N_<11>/Si_3N_4 Stacked High-k Gate Dielectrics with High Quality Ultrathin Si_3N_4 Interfacial Layers (2011)
  • 著者名/発表者名: Tadahiro Ohmi
  • 学会等名: 219th Meeting of The Electrochemical Society
  • 発表場所: Montreal, Canada
  • 年月日: 2011-05-03
• [学会発表] Clear difference between the chemical structure of SiO_2/Si interface formed using oxygen radicals and that formed using oxygen molecules (2011)
  • 著者名/発表者名: Tomoyuki Suwa
  • 学会等名: 219th Meeting of The Electrochemical Society
  • 発表場所: Montreal, Canada
  • 年月日: 2011-05-02
• [学会発表] Science Based New Silicon Technologies Exhibiting Super High Performance due to Radical Reaction Based Semiconductor Manufacturing (2011)
  • 著者名/発表者名: Tadahiro Ohmi
  • 学会等名: The 18^<th> Korean Conference on Semiconductors
  • 発表場所: Jeju, KOREA
  • 年月日: 2011-02-17
• [学会発表] High reliable SiO_2 Films on Atomically Flat Silicon Surface Formed by Low Temperature Pure Ar Annealing (2011)
  • 著者名/発表者名: X.Li, R.Kuroda, T.Suwa, A.Teramoto, S.Sugawa, T.Ohmi
  • 学会等名: 2011 Interanational Workshop on Dielectric Thin Films For Future Electron Devices : Science and Technology
  • 発表場所: 東京
  • 年月日: 2011-01-20
• [学会発表] Ultra-low Series Resistance W/ErSi_2/n^+-Si and W/Pd_2Si/p^+-Si S/D Electrodes for Advanced CMOS Platform (2010)
  • 著者名/発表者名: Rihito Kuroda, Hiroaki Tanaka, Yukihisa Nakao, Akinobu Teramoto, Naoto Miyamoto, Shigetoshi Sugawa, Tadahiro Ohmi
  • 学会等名: IEEE International ELECTRON DEVICES meeting (IEDM) 2010
  • 発表場所: San Francisco, CA, USA
  • 年月日: 2010-12-08
• [学会発表] Impact of Channel Direction Dependent Low Field Hole Mobility on Si(100) (2010)
  • 著者名/発表者名: Rihito Kuroda, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi
  • 学会等名: the 2010 International Conference on SOLID STATE DEVICES AND MATERIALS
  • 発表場所: 東京
  • 年月日: 2010-09-22
• [学会発表] Science Based New Silicon Devices Exhibiting Super High Performance by Very New Plasma Equipment Completely Free From Damages (2010)
  • 著者名/発表者名: Tadahiro Ohmi
  • 学会等名: Final Program of World Automation Congress 2010
  • 発表場所: 神戸
  • 年月日: 2010-09-20
• [学会発表] Effect of erbium silicide crystallinity for low barrier contact between erbium silicide and n-type silicon
  • 著者名/発表者名: Hiroaki Tanaka
  • 学会等名: 222th Meeting of The Electrochemical Society
  • 発表場所: Honolulu, USA
• [学会発表] Comprehensive Study on Chemical Structures of Compositional Transition Layer at SiO2/Si(100) Interface
  • 著者名/発表者名: Tomoyuki Suwa
  • 学会等名: 222th Meeting of The Electrochemical Society
  • 発表場所: Honolulu, USA
• [学会発表] Low frequency noise assessment of accumulation Si p-MOSFETs
  • 著者名/発表者名: Philippe Gaubert
  • 学会等名: 2012 International Conference on SOLID STATE DEVICES AND MATERIALS
  • 発表場所: Kyoto
• [学会発表] Dependence of chemical structures of transition layer at SiO2/Si(100) interface on oxidation temperature, annealing in forming gas, and oxidizing species
  • 著者名/発表者名: Tomoyuki Suwa
  • 学会等名: 2012 International Conference on SOLID STATE DEVICES AND MATERIALS
  • 発表場所: Kyoto
• [学会発表] The role of the temperature on the scattering mechanisms limiting the electron mobility in metal-oxide-semiconductor field-effect-transistors fabricated on (110) silicon-oriented wafers
  • 著者名/発表者名: Philippe Gaubert
  • 学会等名: 42nd European Solid-State Device Research Conference
  • 発表場所: Bordeaux, France
• [学会発表] 100nm-gate-length Normally-off Accumulation-Mode FD-SOI MOSFETs for Low Noise Analog/RF Circuits
  • 著者名/発表者名: Hidetoshi Utsumi
  • 学会等名: 2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
  • 発表場所: Okinawa
• [学会発表] Electrical Properties of Silicon Nitride Using High Density and Low Plasma Damage PECVD Formed at 400℃
  • 著者名/発表者名: Yukihisa Nakao
  • 学会等名: 221th Meeting of The Electrochemical Society
  • 発表場所: Seattle, USA
• [学会発表] Changes in SiO2/Si(100) Interface Structure Induced by Forming Gas Annealing
  • 著者名/発表者名: Tomoyuki Suwa
  • 学会等名: 221th Meeting of The Electrochemical Society
  • 発表場所: Seattle, USA
• [学会発表] Low Work Function between Erbium Silicide and n-type Silicon Controlled by Cap Film Stress
  • 著者名/発表者名: Hiroaki Tanaka
  • 学会等名: 221th Meeting of The Electrochemical Society
  • 発表場所: Seattle, USA
• [備考] 東北大学未来科学技術共同研究センター未来情報産業研究館ホームページ
  • URL: http://www.fff.niche.tohoku.ac.jp/