光熱変換技術を用いた結晶粒界などで光散乱の多い半導体薄膜の光吸収スペクトル測定

• 研究課題/領域番号: 22560024
• 研究種目: 基盤研究(C)
• 配分区分: 補助金
• 応募区分: 一般
• 研究分野: 薄膜・表面界面物性
• 研究機関: 宮崎大学
• 研究代表者: 碇 哲雄 宮崎大学, 工学部, 教授 (70113214)
• 研究期間 (年度): 2010 – 2012
• 研究課題ステータス: 完了 (2012年度)
• 配分額: 4,550千円 (直接経費: 3,500千円、間接経費: 1,050千円); 2012年度: 1,040千円 (直接経費: 800千円、間接経費: 240千円); 2011年度: 910千円 (直接経費: 700千円、間接経費: 210千円); 2010年度: 2,600千円 (直接経費: 2,000千円、間接経費: 600千円)
• キーワード: 光熱変換スペクトル / 半導体薄膜材料 / 光散乱 / 半導体薄膜 / 太陽電池デバイス / 非発光電子遷移

研究概要

この研究では、高感度 PPTS 法(光熱変換分光法)を用いて、光励起キャリアの発熱緩和過程を調べるという実験手段を用いて、大きな結晶粒界や組成変動をもつ薄膜半導体光デバイス材料の光吸収スペクトルを測定する実験手法を開発し、量子井戸薄膜など種々の試料について実験を実施し、その有用性を確認した。

研究成果

• [雑誌論文] Study of bandgap energies of Cu(In,Ga)Se2 thinfilms grown by a sequential evaporation methodusing piezoelectric photothermal spectroscopy (2012)
  • 著者名/発表者名: T. Mori, Y. Motono, W. Ding, A. Fukuyama, T.Yamaguchi and T. Ikari
  • 雑誌名: Japanese Journal of Applied Physics 51 巻: 51 号: 7S ページ: 4-4
  • DOI: 10.1143/jjap.51.07ga07
  • NAID: 210000140902
  • 査読あり
• [雑誌論文] Nitrogen related deep levels in GaAsN filmsinvestigated by a temperature dependence ofpiezoelectric photothermal signal (2012)
  • 著者名/発表者名: K. Kashima, A. Fukuyama, Y. Nakano, M.Inagaki, H. Suzuki, M. Yamaguchi, and T. Ikari
  • 雑誌名: Materials Science Forum 725 巻: 725 ページ: 93-96
  • DOI: 10.4028/www.scientific.net/msf.725.93
  • 査読あり
• [雑誌論文] Non-radiative carrier recombination mechanismin the InGaAs/GaAsP strain-balanced quantumwell solar cells with different number of stacks byusing a piezoelectric photothermal method (2012)
  • 著者名/発表者名: A. Fukuyama, Y. Nakano, T. Aihara, H. Fujii,M. Sugiyama, Y. Nakano and T. Ikari
  • 雑誌名: AIP Conference Proceedings 1477 巻: 1477 ページ: 185-188
  • 査読あり
• [雑誌論文] Investigation of the photovoltaic performance ofthe polycrystalline silicon p-n junction by aphotothermal measurement (2012)
  • 著者名/発表者名: A. Fukuyama, D. Ishibashi, Y. Sato, K. Sakai,H. Suzuki, K. Nishioka and T. Ikari
  • 雑誌名: Journal of Non-Crystalline Solids 358 巻: 358 号: 17 ページ: 2206-2208
  • DOI: 10.1016/j.jnoncrysol.2011.11.016
  • 査読あり
• [雑誌論文] Non-radiative carrier recombination mechanism in the InGaAs/GaAsP strain-balanced quantum well solar cells with different number of stacks by using a piezoelectric photothermal method (2012)
  • 著者名/発表者名: A. Fukuyama, Y. Nakano, T. Aihara, H. Fujii, M. Sugiyama, Y. Nakano and T. Ikari
  • 雑誌名: AIP Conference Proceedings 巻: 1477 ページ: 185-188
  • 査読あり
• [雑誌論文] X-ray and photoluminescence properties of Sm3+ doped barium sulfide (2012)
  • 著者名/発表者名: Maeda, K., Kawaida, N.,Tsudome, R., Sakai, K., Ikari, T..
  • 雑誌名: Physica Status Solidi (C) 巻: 9(12) 号: 12 ページ: 93-96
  • DOI: 10.1002/pssc.201200321
  • 査読あり
• [雑誌論文] Temperature dependence of the optical gap ofdiamond-like carbon films investigated by apiezoelectric photothermal spectroscopy (2011)
  • 著者名/発表者名: W. Ding, Y. Nakano, R. Yamamoto, K. Sakai,H. Nakazawa, A. Fukuyama, and T. Ikari
  • 雑誌名: Temperature dependence of the optical gap ofdiamond-like carbon films investigated by apiezoelectric photothermal spectroscopy 巻: 10 ページ: 66-70
  • DOI: 10.1016/j.egypro.2011.10.154
  • 査読あり
• [雑誌論文] Determination of exciton binding energy ofGaInNAs quantum well structures by piezoelectric photothermal spectroscopycompared with photoreflectance measurements (2011)
  • 著者名/発表者名: K. Kashima, A. Fukuyama, K. Sakai, H.Yokoyama, M. Kondow, and T. Ikari
  • 雑誌名: Japanese Journal of Applied Physics 巻: 50 号: 6S ページ: 06GH09-06GH09
  • DOI: 10.1143/jjap.50.06gh09
  • 査読あり
• [雑誌論文] Effect of silicon doping on the photoluminescenceand photoreflectance spectra of catalyst-freemolecular beam epitaxy-vapor liquid solid grownGaAs nanowires on (111) Si substrate (2011)
  • 著者名/発表者名: A. Suzuki, A. Fukuyama, T. Ikari, Ji-HyunPaek, and M. Yamaguchi
  • 雑誌名: Japanese Journal of Applied Physics 巻: 50 号: 6S ページ: 06GH08-06GH08
  • DOI: 10.1143/jjap.50.06gh08
  • 査読あり
• [雑誌論文] Effect of the molecular weight of a polyethyleneglycol on the photoluminescence spectra ofporous TiO2 films for dye-sensitized solar cells (2011)
  • 著者名/発表者名: K. Sakai, Y. Hirashita, T. Aihara, A.Fukuyama,T. Ikari, K. Kukita, and S. Furukawa
  • 雑誌名: Thin Solid Films 巻: 519 号: 17 ページ: 5760-5762
  • DOI: 10.1016/j.tsf.2010.12.205
  • 査読あり
• [雑誌論文] The study of bandgap energies of Cu(In, Ga)Se2thin films grown by a sequential evaporationmethod using a photothermal spectroscopyProc (2011)
  • 著者名/発表者名: T. Mori, Y. Motono, W. Ding, A. Fukuyama, T.Yamaguchi, and T. Ikari
  • 雑誌名: Ultrasonic Electronics Symposium 巻: vol. 32 ページ: 61-62
  • 査読あり
• [雑誌論文] Detection of Thermal Energy Loss of thephotoexcited Carriers in Polycrystalline Siliconp-n Junction Interface Region by a PiezoelectricPhotothermal Study (2010)
  • 著者名/発表者名: H. Tamura, A. Fukuyama, K. Sakai, and T.Ikari
  • 雑誌名: Proc. Ultrasonic Electronics Symposium 巻: vol. 31 ページ: 31-32
  • 査読あり
• [雑誌論文] Detection of Thermal Energy Loss of the photoexcited Carriers in Polycrystalline Silicon p-n Junction Interface Region by a Piezoelectric Photothermal Study (2010)
  • 著者名/発表者名: H.Tamura, A.Fukuyama, K.Sakai, T.Ikari
  • 雑誌名: Proc.Symposium on Ultrasonic Electronics 巻: 31
  • 査読あり
• [学会発表] Non-radiative carrier recombination inInGaAs/GaAsP strain-balanced superlattice solarcel (2012)
  • 著者名/発表者名: T. Aihara and T. Ikari
  • 学会等名: American Vacuum Society 59th Int. Symposium& Exhibition (AVS 59th)
  • 発表場所: Tampa, USA
• [学会発表] Piezoelectric photothermal spectra and carriernonradiative recombination in InGaAs/GaAsPsuperlattice structured solar cell (2012)
  • 著者名/発表者名: T. Ikari and A. Fukuyama
  • 学会等名: American Vacuum Society 59th Int. Symposium& Exhibition (AVS 59th)
  • 発表場所: Tampa, USA
• [学会発表] The effect of substrate on the GaN on Si substrateby photoreflectance and photoluminescenceInt. (2012)
  • 著者名/発表者名: A. Suzuki and T. Ikari
  • 学会等名: Workshop on Nitride Semiconductors(IWN2012)
  • 発表場所: Sapporo, Japan
• [学会発表] Photoluminescence and photoreflectance spectraof C60 and Si co-doped GaAs layers (2012)
  • 著者名/発表者名: W. Ding and T. Ikari
  • 学会等名: Int. Conf. on Diamond and Carbon Materials(ICDCM2012 or Diamond2012)
  • 発表場所: Granada, Spain
• [学会発表] Effect of Be doping on the optical properties ofcatalyst free MBE-VLS grown GaAs nanowireson Si (111) substrate (2012)
  • 著者名/発表者名: A. Suzuki and T. Ikari
  • 学会等名: Int. Conf. on Superlattices, Nanostructures, andNanodevices (icsnn 2012)
  • 発表場所: Dresden, Germany
• [学会発表] Effect of grain boundaries on the thermal andelectron diffusivity of multi-crystalline siliconinvestigated by a photothermal microscopy (2012)
  • 著者名/発表者名: T. Ikari and D. Fournier
  • 学会等名: The European Materials Research Society SpringMeeting 2012 (E-MRS 2012)
  • 発表場所: Strasbourg, France
• [学会発表] Photoluminescence and piezoelectricphotothermal spectra of Cu(In,Ga)Se2 thin filmsby a sequential evaporation method (2012)
  • 著者名/発表者名: W. Ding and T. Ikari
  • 学会等名: The European Materials Research Society SpringMeeting 2012 (E-MRS 2012)
  • 発表場所: Strasbourg, France
• [学会発表] Effect of N composition on temperaturedependence of band gap energies of GaAsN thinfilms grown by Chemical Beam Epitaxy (2012)
  • 著者名/発表者名: A. Fukuyama and T. Ikari
  • 学会等名: The European Materials Research Society SpringMeeting 2012 (E-MRS 2012)
  • 発表場所: Strasbourg, France
• [学会発表] Non-radiative carrier recombination mechanismin the InGaAs/GaAsP strain-balanced quantumwell solar cells with different number of stacks byusing a piezoelectric photothermal method (2012)
  • 著者名/発表者名: Y. Nakano and T. Ikari
  • 学会等名: 8th International Conf. on ConcentratingPhotovoltaic Systems (CPV-8)
  • 発表場所: Toledo, Spain
• [学会発表] Bandgap gradient of Cu(In,Ga)Se2 absorbing layer studied by piezoelectric photothermal and photoluminescence spectroscopies (2012)
  • 著者名/発表者名: Wen Ding, Yutaro Motono, Takayuki Mori, Akio Suzuki, Toshiyuki Yamaguchi1, Atsuhiko Fukuyama, and Tetsuo Ikari
  • 学会等名: EMRS (European Materials Research Society) Spring
  • 発表場所: Strasbourg, France
• [学会発表] Effect of grain boundaries on the thermal and electron diffusivity of multi-crystalline silicon investigated by a photothermal microscopy (2012)
  • 著者名/発表者名: T. Ikari, A. Fukuyama, K. Nishioka, J. P. Roger, and D. Fournier
  • 学会等名: EMRS (European Materials Research Society) Spring
  • 発表場所: Strasbourg, France
• [学会発表] Distribution of localized nitrogen atoms in GaAsN thin films grown by a Chemical Beam Epitaxy investigated by a photoreflectance spectroscopy (2012)
  • 著者名/発表者名: Atsuhiko Fukuyama, Susumu Yamamoto, Akio Suzuki, Makoto Inagaki, Hidetoshi Suzuki, Masafumi Yamaguchi, and Tetsuo Ikari
  • 学会等名: EMRS (European Materials Research Society) Spring
  • 発表場所: Strasbourg, France
• [学会発表] Piezoelectric Photothermal Spectra and carrier nonradiative recombination in InGaAs/GaAsP Super Lattice Structured Solar Cells (2012)
  • 著者名/発表者名: T. Ikari, T. Aihara, Y. Nakano, A. Fukuyama, Y. Wang, M. Sugiyama, Y. Nakano.
  • 学会等名: American Vacuum Society, 59th Int. Symposium
  • 発表場所: Tampa, FL USA
• [学会発表] Nonradiative Carrier Recombination in InGaAs/GaAsP Strain-Balanced Superlattice Solar Cells (2012)
  • 著者名/発表者名: Taketo Aihara,, Y. Nakano, A. Fukuyama, Y. Wang , M. Sugiyama, Y. Nakano, and Testuo Ikari
  • 学会等名: American Vacuum Society, 59th Int. Symposium
  • 発表場所: Tampa, FL USA
• [学会発表] Effects of growth method on localized state ofnitrogen atoms in GaAsN thin films (2011)
  • 著者名/発表者名: S. Yamamoto7 and T. Ikari
  • 学会等名: 21th International Photovoltaic Science andEngineering Conference (PVSEC-21)
  • 発表場所: Fukuoka, Japan
• [学会発表] Nitrogen related deep levels in GaAsN filmsinvestigated by a temperature variation ofpiezoelectric photothermal signal amplitude14th International Conference on Defects -Recognition (2011)
  • 著者名/発表者名: K. Kashima and T. Ikari
  • 学会等名: Imaging and Physics inSemiconductors (DRIP14)
  • 発表場所: Miyazaki, Japan
• [学会発表] Temperature dependence of the optical gap ofdiamond-like carbon films by piezoelectricphotothermal and photoluminescencespectroscopies (2011)
  • 著者名/発表者名: Wen Ding, and T. Ikari
  • 学会等名: 22nd European Conference on Diamond,Diamond-Like Materials, Carbon Nanotubes andNitrides (Diamond 2011)
  • 発表場所: Garmisch-Partenkirchen, Germany
• [学会発表] Investigation of the photovoltaic performance ofthe polycrystalline silicon p-n junction by aphotothermal measurement (2011)
  • 著者名/発表者名: A. Fukuyama and T. Ikari
  • 学会等名: 24th International Conference on Amorphous andNano-Crystallie Semiconductors (ICANS24)
  • 発表場所: Nara, Japan
• [学会発表] Photoluminescence and photoreflectance spectraof silicon related impurity levels in catalyst freeMBE-VLS grown GaAs nanowires on (111) Sisubstrate (2011)
  • 著者名/発表者名: A. Suzuki and T. Ikari
  • 学会等名: 19th Conference on Modulated SemiconductorStructures (MSS15) joint with internationalconference on Electric Properties ofTow-Dimensional Electron Systems(EP2DS19/MSS15)
  • 発表場所: Tallahassee, Florida, USA
• [学会発表] Photoluminescence studies of vacancy complex inp-type Li and Ni co-doped ZnO samples grownby a pulsed laser deposition (2011)
  • 著者名/発表者名: K. Sakai and T. Ikari
  • 学会等名: The European Materials Research Society SpringMeeting 2011 (E-MRS 2011)
  • 発表場所: Nice, France
• [学会発表] Temperature dependence of the optical gap ofdiamond-like carbon films by using apiezoelectric photothermal spectroscopy (2011)
  • 著者名/発表者名: W. Ding and T. Ikari
  • 学会等名: The European Materials Research Society SpringMeeting 2011 (E-MRS 2011)
  • 発表場所: Nice, France
• [学会発表] Investigation of deep trap centers by atemperature variation of the signal amplitude inthe piezoelectric photothermal spectra (2011)
  • 著者名/発表者名: K. Kashima and T. Ikari
  • 学会等名: The European Materials Research Society SpringMeeting 2011 (E-MRS 2011)
  • 発表場所: Nice, France
• [学会発表] Photoluminescence and photoreflectance studiesof a silicon related impurity levels in catalyst freeMBE-VLS grown GaAs nanowires on (111) Sisubstrate (2011)
  • 著者名/発表者名: A. Suzuki and T. Ikari
  • 学会等名: The European Materials Research Society SpringMeeting 2011 (E-MRS 2011)
  • 発表場所: Nice, France
• [学会発表] Effect of N composition on temperaturedependence of band gap energies of GaAsN thinfilms grown by Chemical Beam Epitaxy (2011)
  • 著者名/発表者名: S. Yamamoto and T. Ikari
  • 学会等名: The European Materials Research Society SpringMeeting 2011 (E-MRS 2011)
  • 発表場所: Nice, France
• [学会発表] Photoluminescence and piezoelectricphotothermal spectra of Cu(In,Ga)Se2 thin filmsby a sequential evaporation method (2011)
  • 著者名/発表者名: T. Mori and T. Ikari
  • 学会等名: The European Materials Research Society SpringMeeting 2011 (E-MRS 2011)
  • 発表場所: Nice, France
• [学会発表] Investigation of deep trap centers by a temperature variation of the signal amplitude in the piezoelectric photothermal spectra (2011)
  • 著者名/発表者名: Koshiro Kashima, Susumu Yamamoto, Yosuke Nakano, Kentaro Sakai, Hidetoshi Suzuki, Makoto Inagaki, Masafumi Yamaguchi, Atsuhiko Fukuyama, Tetsuo Ikari
  • 学会等名: EMRS (European Materials Research Society) Spring meeting, 2011
  • 発表場所: Nice, France
• [学会発表] Photoluminescence and photothermal spectra of Cu(In,Ga)Se2 thin films by a sequential evaporation method (2011)
  • 著者名/発表者名: Takayuki Mori, Akio Suzuki, Yutarou Motono, Wen Ding, Atsuhiko Fukuyama, Toshiyuki Yamaguchi, Tetsuo Ikari
  • 学会等名: EMRS Spring meeting, 2011
  • 発表場所: Nice, France
• [学会発表] Effect of N composition on temperature dependence of band gap energies of GaAsN thin films grown by Chemical Beam Epitaxy (2011)
  • 著者名/発表者名: Susumu Yamamoto, Koshiro Kashima, Akio Suzuki, Hidetoshi Suzuki, Atsuhiko Fukuyama, Makoto Inagaki, Masafumi Yamaguchi, Tetsuo Ikari
  • 学会等名: EMRS Spring meeting, 2011
  • 発表場所: Nice, France
• [学会発表] Photoluminescence and photoreflectance studies of a silicon related impurity levels in catalyst free MBE-VLS grown GaAs nanowires on (111)Si substrate (2011)
  • 著者名/発表者名: Akio Suzuki, Takayuki Mori, Atsuhiko Fukuyama, Tetsuo Ikari, Ji-Hyun Paek, Masahito Yamaguchi
  • 学会等名: EMRS Spring meeting, 2011
  • 発表場所: Nice, France
• [学会発表] Temperature dependence of the optical gap of diamond-like carbon films investigated by a piezoelectric photothermal spectroscopy (2011)
  • 著者名/発表者名: Ding, W., Nakano, Y., Yamamoto, R., Sakai, K., Nakazawa, H., Fukuyama, A., Ikari, T.
  • 学会等名: Int.Conf.Diamond and Carbon Materilas, 20
  • 発表場所: Garmisch-Partenkirchen, Germany
• [学会発表] プラズマCVD法で成膜したダイヤモンド様炭素の光学ギャップの温度依存性の研究 (2011)
  • 著者名/発表者名: 中野陽介, 丁文, 三浦創史, 境健太郎, 福山敦彦, 碇哲雄
  • 学会等名: 応用物理学会学術講演会
  • 発表場所: 神奈川工科大学、神奈川
• [学会発表] 非発光再結合検出によるスパッタ法で製膜させたSi基板上SiGe膜の光学的評価 (2011)
  • 著者名/発表者名: 河野洋平、政田清孝、福山敦彦、碇哲雄
  • 学会等名: 応用物理学会学術講演会
  • 発表場所: 神奈川工科大学、神奈川
• [学会発表] Effect of Silicon Doping on the Photoluminescence and Photoreflectance Spectra of Catalyst Free MBE-VLS Grown GaAs Nanowires (2010)
  • 著者名/発表者名: Akio Suzuki, Takayuki Mori, Atsuhiko Fukuyama, Tetsuo Ikari, Ji-Hyun Paek
  • 学会等名: MNC2010(International Microprocesses and Nanotechnology Conferenc)
  • 発表場所: Kokura, JAPAN
  • 年月日: 2010-11-12
• [学会発表] Determination of exciton binding energy of GaInNAs Quantum wells by apiezoelectric photo-thermal spectroscopy comparing with a photo-reflectance and a photoluminescence measurements (2010)
  • 著者名/発表者名: K.Kashima, A.Fukuyama, K.Sakai, H.Yokoyama, M.Kondow, T.Ikari
  • 学会等名: MNC2010(International Microprocesses and Nanotechnology Conferenc)
  • 発表場所: Kokura, JAPAN
  • 年月日: 2010-11-12
• [学会発表] Effect of rapid thermal annealing on well width dependences of exciton binding energy in GaInNAs/GaAs single quantum wells (Oral) (2010)
  • 著者名/発表者名: T.Ikari, H.Yokoyama, K.Sakai, A.Fukuyama, M.Kondow
  • 学会等名: E-MRS(European Materials Society Symposium)
  • 発表場所: Strasbourg, FRANCE
  • 年月日: 2010-06-11
• [学会発表] Determination of the band gap and its exciton binding energy of 100nm thick GaInNAs films by using a piezoelectric photo-thermal and a photo-reflectance spectroscopy (Oral) (2010)
  • 著者名/発表者名: A.Fukuyama, T.Ikari, M.Yano, K.Sakai, H.Yokoyama, M.Kondow
  • 学会等名: E-MRS(European Materials Society Symposium)
  • 発表場所: Strasbourg, FRANCE
  • 年月日: 2010-06-11
• [学会発表] Effect of the molecular weight of a polyethylene glycol on the photoluminescence spectra of porous TiO_2 films for dye-sensitized solar cells (2010)
  • 著者名/発表者名: K.Sakai, Y.Hirashita, T.Aihara, A.Fukuyama, T.Ikari, S.Furukawa
  • 学会等名: E-MRS(European Materials Society Symposium)
  • 発表場所: Strasbourg, FRANCE
  • 年月日: 2010-06-11
• [学会発表] Low-temperature photoluminescence ofphosphorous-doped ZnO nanowires synthesizedby nanoparticle-assisted pulsed-laser deposition (2010)
  • 著者名/発表者名: K. Sakai and T. Ikari
  • 学会等名: Premier Technical Conference of IEEE Region 10(TENCON 2010)
  • 発表場所: Fukuoka, Japan
• [学会発表] Effect of the molecular weight of a polyethyleneglycol on the photoluminescence spectra ofporous TiO2 films for dye-sensitized solar cells (2010)
  • 著者名/発表者名: K. Sakai and T. Ikari
  • 学会等名: The European Materials Research Society SpringMeeting 2010 (E-MRS 2010)
  • 発表場所: Strasbourg, France
• [学会発表] Effect of rapid thermal annealing on well widthdependences of exciton binding energy inGaInNAs/GaAs single quantum wells (2010)
  • 著者名/発表者名: T. Ikari and M. Kondow
  • 学会等名: The European Materials Research Society SpringMeeting 2010 (E-MRS 2010)
  • 発表場所: Strasbourg, France
• [学会発表] Determination of the band gap and its excitonbinding energy of 100nm thick GaInNAs films by using a piezoelectric photo-thermal and aphoto-reflectance spectroscop (2010)
  • 著者名/発表者名: A. Fukuyama and T. Ikari
  • 学会等名: The European Materials Research Society SpringMeeting 2010 (E-MRS 2010)
  • 発表場所: Strasbourg, France
• [学会発表] Detection of Thermal Energy Loss of the Photo-excited Carriers in Polycrystalline Silicon p-n Junction by a Piezoelectric Photothermal Study (2010)
  • 著者名/発表者名: Hitoshi Tamura, Atsuhiko Fukuyama, Tetsuo Ikari, Sakai Kentaro
  • 学会等名: USE(超音波エレクトニクスの基礎と応用に関するシンポジウム)
  • 発表場所: 明治大学、東京
• [備考]
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• [備考] 研究室ホームページ
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• [備考]
  • URL: http://www.cc.miyazaki-u.ac.jp/mdeee03/ikari/IK_main01.htm
• [備考]
  • URL: http://www.pem.miyazaki-u.ac.jp/index.html