高効率太陽電池用高品質基板材料の新規作成法

• 研究課題/領域番号: 22760005
• 研究種目: 若手研究(B)
• 配分区分: 補助金
• 研究分野: 応用物性・結晶工学
• 研究機関: 静岡大学
• 研究代表者: ムカンナン アリバナンドハン 静岡大学, 電子工学研究所, 助教 (50451620)
• 研究期間 (年度): 2010 – 2011
• 研究課題ステータス: 完了 (2011年度)
• 配分額: 4,160千円 (直接経費: 3,200千円、間接経費: 960千円); 2011年度: 1,170千円 (直接経費: 900千円、間接経費: 270千円); 2010年度: 2,990千円 (直接経費: 2,300千円、間接経費: 690千円)
• キーワード: 太陽電池 / シリコン / シリコンゲルマニウム / 少数キャリア寿命 / 結晶欠陥密度 / ガリウム添加 / 格子間酸素濃度 / 欠陥密度 / 酸素析出物 / シリコンゲンルニウム / 寿命 / ドーピング

研究概要

太陽電池の変換効率を向上させるために、(1) Geの添加がSi結晶中のボイド欠陥形成と光照射による結晶品質劣化に及ぼす効果と(2) GaをドープしたSi1-xGex結晶の欠陥発生機構及び寿命に対するGe組成の効果を調べた。Gaドープ濃度を増加させると、少数キャリア寿命が増加し、フローパターン欠陥密度と格子間酸素濃度が減少した。これらの現象は、Ge-空孔の複合体が不均一核形成センターとして働くことで、酸素析出物を形成し、格子間酸素濃度が減少することを示している。

研究成果

• [雑誌論文] Impact of Ge codoping on the enhancement of minority carrier lifetime in B-doped Czochralski grown Si (2012)
  • 著者名/発表者名: Mukannan Arivan and han, Raira Gotoh, Tatsuro Watahiki, Kozo Fujiwara, Yashiro Hayakawa, Satoshi Uda, Makoto Konagai
  • 雑誌名: Journal of Applied Physics 巻: 111 ページ: 43707-43707
• [雑誌論文] Bulk growth of InGaSb alloy semiconductor under terrestrial conditions : A preliminary study for microgravity experiment at ISS (2012)
  • 著者名/発表者名: M. Arivanandhan, G. Rajesh, A. Tanaka, T. Ozawa, Y. Okano, Y. Inatomi, Y. Hayakawa
  • 雑誌名: Diffusion and Defect Forum 巻: vol.323-325 ページ: 539-544
• [雑誌論文] Impact of Ge codoping on the enhancement of minority carrier lifetime in B-doped Czochralski -grown Si (2012)
  • 著者名/発表者名: M.ARIVANANDHAN, R.GOTOH, T.WATAHIKI, K.FUJIWARA, Y.HAYAKAWA, S.UDA, M.KONAGAI
  • 雑誌名: J.Appl.Phys. 巻: 111 号: 4 ページ: 43707-43707
  • DOI: 10.1063/1.3687935
  • 査読あり
• [雑誌論文] Crystal growth of InGaSb alloy semiconductor at International Space Station : Preliminary experiments (2011)
  • 著者名/発表者名: M. Arivan and han, G. Rajesh, T. Koyama, Y. Momose, K. Sankaranarayanan, A. Tanaka, Y. Hayakawa, T. Ozawa, Y. Okano, and Y. Inatomi
  • 雑誌名: J. Jpn. Soc. Microgravity Appl. 巻: 28 ページ: 46-50
• [雑誌論文] Growth of Homogeneous Mg2Si1-xGex Crystals for Thermoelectric Application (2011)
  • 著者名/発表者名: Yasuhiro Hayakawa, Mukannan Arivanandhan, Yosuke Saito, Tadanobu Koyama, Yoshimi Momose, Hiroya Ikeda, Akira Tanaka, Cuilian Wen, Yoshihiro Kubota, Tamotsu Nakamura, Dinesh Kumar Aswal, Shovit Bhattachary, Yuko Inatomi and Hirokazu Tatsuoka
  • 雑誌名: Thin Solid Films 巻: 519 ページ: 8532-8537
• [雑誌論文] Effect of solutal convection on the dissolution of GaSb into InSb melt and solute transport mechanism InGaSb solution : Numerical simulation and in-situ observation experiments (2011)
  • 著者名/発表者名: A. Tanaka, H. Morii, T. Aoki, T. Koyama, Y. Momose, T. Ozawa, Y. Inatomi, Y. Takagi, Y. Okano, Y. Hayakawa
  • 雑誌名: Journal of Crystal Growth 巻: 324 ページ: 157-162
• [雑誌論文] The impact of Ge codoping on grown-in O precipitates in Ga doped Czochralski-silicon (2011)
  • 著者名/発表者名: Mukannan Arivanandhan, Raira Gotoh, Kozo Fujiwara, Tetsuo Ozawa, Yasuhiro Hayakawa, Satoshi Uda
  • 雑誌名: J. Crystal Growth 巻: 321 ページ: 24-28
• [雑誌論文] Growth of homogeneous polycrystalline Si_<1-x>Ge_x and Mg_2Si_<1-x>Ge_x for ther moelectric application (2011)
  • 著者名/発表者名: Y.Hayakawa, M.Arivanandhan, Y.Saito, T.Koyama, Y.Momose, H.Ikeda, A.Tanaka, C.Wen, Y.Kubota T.Nakamura, S.Bhattacharya, D.K.Aswal, S.M.Babu, Y.Inatomi, H.Tatsuoka
  • 雑誌名: Thin Solid Films 巻: 519 号: 24 ページ: 8532-8537
  • DOI: 10.1016/j.tsf.2011.05.033
  • 査読あり
• [雑誌論文] The Impact of Ge Codoping on Grown-in o precipitates in Ga-dopedCzochralski-silicon (2011)
  • 著者名/発表者名: M.ARIVANANDHAN, R.GOTH, K.FUJIWARA, T.OZAWA, Y.HAYAKAWA, S.UDA
  • 雑誌名: J.Crystal Growth 巻: 321 号: 1 ページ: 24-28
  • DOI: 10.1016/j.jcrysgro.2011.02.028
  • 査読あり
• [雑誌論文] Growth of Si_<1-x>Ge_x Bulk Crystals with Highly Homogeneous Composition for Thermoelectric Applications (2011)
  • 著者名/発表者名: M.ARIVANANDHAN, Y.SAITO, T.KOYAMA, Y.MOMOSE, H.IKEDA, A.TANAKA, T.TATSUOKA, D.K.ASWAL, Y.INATOMI, Y.HAYAKAWA
  • 雑誌名: J.Crystal Growth 巻: 318 ページ: 324-327
  • 査読あり
• [雑誌論文] The Impact of Ge Codoping on Grown-in O precipitates in Ga-dopedCzochralski-silicon (2011)
  • 著者名/発表者名: M.ARIVANANDHAN, R.GOTH, K.FUJIWARA, T.OZAWA, Y.HAYAKAWA, S.UDA
  • 雑誌名: J.Crystal Growth 巻: 321 ページ: 24-28
  • 査読あり
• [雑誌論文] Growth of highly homogeneous Si1-xGex bulk crystals for thermoelectric applications (2010)
  • 著者名/発表者名: M. Arivanandhan, Y. Saito, T. Koyama, Y. Momose, H. Ikeda, A. Tanaka, T. Tatsuoka, D. K. Aswal, Y. Inatomi, Y. Hayakawa
  • 雑誌名: J. Crystal Growth 巻: 318 ページ: 324-327
• [雑誌論文] Ga segregation during Czochralski-Si crystal growth with Ge codoping (2010)
  • 著者名/発表者名: Raira Gotoh, M. Arivanandhan, Kozo Fujiwara, Satoshi Uda
  • 雑誌名: J. Crystal Growth 巻: 312 ページ: 2865-2870
• [雑誌論文] In-situ Observations of Dissolution Process of GaSb into InSb Melt by X-ray Penetration Method (2010)
  • 著者名/発表者名: G. Rajesh, M. Arivanandhan, H. Morii, T. Aoki, T. Koyama, Y. Momose, A. Tanaka, Y. Inatomi, Y. Hayakawa
  • 雑誌名: J. of Cryst. Growth 巻: 312 ページ: 2677-2682
• [雑誌論文] In-situ Observations of Dissolution Process of GaSb into InSb Melt by X-ray Penetration Method (2010)
  • 著者名/発表者名: G.RAJESH, M.ARIVANANDHAN, H.MORII, T.AOKI, T.KOYAMA, Y.MOMOSE, A.TANAKA, T.OZAWA, Y.INATOMI, Y.HAYAKAWA
  • 雑誌名: J.Crystal Growth 巻: 312 ページ: 2677-2682
  • 査読あり
• [雑誌論文] Ga Segregation during Czochralski-Si Crystal Growth with Ge Codoping (2010)
  • 著者名/発表者名: R.GOTOH, M.ARIVANANDHAN, K.FUJIWARA, S.UDA
  • 雑誌名: J.Crystal Growth 巻: 312 ページ: 2865-2870
  • 査読あり
• [雑誌論文] Semiconductor Alloy Crystal Growth under Microgravity (2010)
  • 著者名/発表者名: Y.HAYAKAWA, M.ARIVANANDHAN, GRAJESH, A.TANAKA, T.OZAWA, Y.OKANO, K.SANKARANARAYANAN, Y.INATOMI
  • 雑誌名: AIP conference proceedings 巻: 1313 ページ: 45-51
• [学会発表] In-situ observation of dissolution process of Si into Ge melt by X-raypenetration Method (2012)
  • 著者名/発表者名: M. Omprakash, M. Arivanandhan, H. Morii, T. Aoki, T. Koyama, Y. Momose, A. Tanaka, H. Ikeda, H. Tatsuoka, Y. Okano, T. Ozawa, Y. Inatomi, S. Moorthy Babu and Y. Hayakawa
  • 学会等名: 59th Spring meeting of Japan Society of Applied Physics
  • 発表場所: Waseda University, Tokyo, Japan
  • 年月日: 2012-03-18
• [学会発表] The effect of Ge codoping on the B-Opair formation in B-doped CZ-Si (2012)
  • 著者名/発表者名: M. Arivanandhan, R. Gotoh, K. Fujiwara, S. Uda, Y. Hayakawa, M. Konagai
  • 学会等名: 59th Spring meeting of Japan Society of Applied Physics
  • 発表場所: Waseda University, Tokyo, Japan
  • 年月日: 2012-03-17
• [学会発表] In-situ observation of dissolution process of Si into Ge melt by X-ray penetration Method (2012)
  • 著者名/発表者名: M.OMPRAKASH, M.ARIVANANDHAN, H.MORII, T.AOKI, T.KOYAMA, Y.MOMOSE, A.TANAKA, H.IKEDA, H.TATSUOKA, Y.OKANO, T.OZAWA, Y.INATOMI, S.MOORTHY BABU, Y.HAYAKAWA
  • 学会等名: 59th Spring meeting of Japan Society of Applied Physics
  • 発表場所: Waseda Univercity (Tokyo, Japan)
  • 年月日: 2012-03-17
• [学会発表] Effect of gravity on the solute transport of bulk alloy semiconductor crystal growth (2012)
  • 著者名/発表者名: Y. Hayakawa, M. Arivanandhan, G. Rajesh, T. Koyama, Y. Momose, H. Morii, T. Aoki, A. Tanaka, Y. Takagi, Y. Okano, T. Ozawa, K. Sakata, Y. Inatomi
  • 学会等名: 59th Spring meeting of Japan Society of Applied Physics
  • 発表場所: Waseda University, Tokyo, Japan
  • 年月日: 2012-03-16
• [学会発表] The effect of Ge codoping on the B-O pair formation in B-doped CZ-Si (2012)
  • 著者名/発表者名: M.ARIVANANDHAN, R.GOTOH, K.FUJIWARA, S.UDA, Y.HAYAKAWA, M.KONAGAI
  • 学会等名: 59th Spring meeting of Japan Society of Applied Physics
  • 発表場所: Waseda Univercity (Tokyo, Japan)
  • 年月日: 2012-03-16
• [学会発表] Grown in micro defects(GMDs) in CZ grown ?Si (2012)
  • 著者名/発表者名: M. Arivanandhan, R. Gotoh, K. Fujiwara, Y. Hayakawa and S. Uda
  • 学会等名: Seminar under collaborative project
  • 発表場所: Tohoku University
  • 年月日: 2012-02-29
• [学会発表] Growth of Ternary Alloy Semiconductors under Microgravity Experiment (2012)
  • 著者名/発表者名: Y. Hayakawa, M. Arivanandhan, G. Rajesh, M. Omprakash, T. Koyama, Y. Momose, A. Tanaka, T. Ozawa, Y. Okano, K. Sakata and Y. Inatomi
  • 発表場所: Ann University
  • 年月日: 2012-02-23
• [学会発表] Growth of Ternary Alloy Semiconductors under Microgravity Experiment (2012)
  • 著者名/発表者名: Y.HAYAKAWA, M.ARIVANANDHAN, G.RAJESH, M.OMPRAKASH, T.KOYAMA, Y.MOMOSE, A.TANAKA, T.OZAWA, Y.OKANO, K.SAKATA, Y.INATOMI
  • 学会等名: Seminar at Anna University
  • 発表場所: Anna University (Chennai, India)(Invited)
  • 年月日: 2012-02-23
• [学会発表] Growth of Homogeneous Si_<1-x>Ge_x and Mg_2Si_<1-x>Ge_x for Thermoelectric Application (2012)
  • 著者名/発表者名: Y.HAYAKAWA, M.ARIVANANDHAN, M.OMPRAKASH, T.KOYAMA, Y.MOMOSE, H.IKEDA, A.TANAKA, H.TATSUOKA, A.ISHIDA, Y.OKANO, Y.INATOMI, D.K.ASWAL, S.BHATTACHARYA, D.THANGARAJU, S.MOORTHY BABU
  • 学会等名: Seminar at Anna University
  • 発表場所: Anna University (Chennai, India)(Invited)
  • 年月日: 2012-02-23
• [学会発表] Growth of homogeneous Si_<1-x> Gex andMg_2Si_<1-x> Ge_x for thermoelectric application (2012)
  • 著者名/発表者名: Y. Hayakawa, M. Arivanandhan, M. Omprakash, T. Koyama, Y. Momose, H. Ikeda, A. Tanaka, H. Tatsuoka, A. Ishida, Y. Inatomi, D. K. Aswal, S. Bhattacharya and S. Moorthy Babu
  • 学会等名: International Conference on Recent trends in Advanced Materials(ICRAM)
  • 発表場所: VIT University, Vellore, India
  • 年月日: 2012-02-21
• [学会発表] Growth of homogeneous Si_<1-x>Ge_x and Mg_2Si_<1-x>Ge_x for thermoelectric application (2012)
  • 著者名/発表者名: Y.HAYAKAWA, M.ARIVANANDHAN, M.OMPRAKASH, T.KOYAMA, Y.MOMOSE, A.TANAKA, H.IKEDA, T.TATSUOKA, A.ISHIDA, Y.INATOMI, D.K.ASWAL, S.BHATTACHARYA, S.MOORTHY BABU
  • 学会等名: International Conference on Recent trends in Advanced Materials (ICRAM)
  • 発表場所: VIT Univercity (Vellore, India)(Invited)
  • 年月日: 2012-02-21
• [学会発表] Impact of Ge codoping on the photovoltaic characteristics of B-dopedCZ-Si (2011)
  • 著者名/発表者名: M. Arivanandhan, R. Gotoh, T. Watahiki, K. Fujiwara, Y. Hayakawa, S. Uda and M. Konagai
  • 学会等名: International Conference on Advanced Materials(ICAM), PSG College of Technology
  • 発表場所: Coimbatore, India
  • 年月日: 2011-12-12
• [学会発表] Impact of Ge codoping on the enhancement of minority carrier lifetime in B-doped Czochralski-grown Si (2011)
  • 著者名/発表者名: M.ARIVANANDHAN, R.GOTOH, T.WATAHIKI, K.FUJIWARA, Y.HAYAKAWA, S.UDA, M.KONAGAI
  • 学会等名: International conference on Advanced Materials
  • 発表場所: PSG College of Technology (Coimbatore, India)(Invited)
  • 年月日: 2011-12-12
• [学会発表] Growth of In_xGa_<1-x> Sb alloy crystal using Gradient Heating Furnace under 1G condition (2011)
  • 著者名/発表者名: Y. Hayakawa, M. Arivanandhan, G. Rajesh, A. Tanaka, T. Ozawa, Y. Okano, K. Sakata and Y. Inatomi
  • 学会等名: 25^<th> Conference of Japan Society of Microgravity and Applications
  • 発表場所: Yokohama, Japan
  • 年月日: 2011-11-30
• [学会発表] The influence of germanium codoping on the reduction of interstitial oxygen concentration in boron-doped Czochralski-silicon : a novel approach to suppress light induced degradation (2011)
  • 著者名/発表者名: M.ARIVANANDHAN, R.GOTOH, T.WATAHIKI, K.FUJIWARA, Y.HAYAKAWA, M.KONAGAI, S.UDA
  • 学会等名: 21^<st> International Photovoltaic Science and Engineering Conference
  • 発表場所: Fukuoka Sea Hawk (Fukuoka, Japan)
  • 年月日: 2011-11-30
• [学会発表] The influence of germanium codoping on the reduction of interstitial oxygen concentration in boron-doped Czochralski-silicon : a novel approach to suppress light induced degradation (2011)
  • 著者名/発表者名: M. Arivanandhan, R. Gotoh, T. Watahiki, K. Fujiwara, Y. Hayakawa, M. Konagai, S. Uda
  • 学会等名: 21^<st> International Photovoltaic Science and Engineering Conference
  • 発表場所: Fukuoka, Japan
  • 年月日: 2011-11-29
• [学会発表] Improvement of photovoltaic characteristics of B-doped CZ-Si by Gecodoping (2011)
  • 著者名/発表者名: Mukannan Arivanandhan, Raira Gotoh, Tatsuro Watahiki, KozoFujiwara, Satoshi Uda, YasuhiroHayakawa, Makoto Konagai
  • 学会等名: 41^<st> National Conference on Crystal Growth
  • 発表場所: Tsukuba, Japan
  • 年月日: 2011-11-05
• [学会発表] Improvement of photovoltaic characteristics of B-doped CZ-Si by Ge codoping (2011)
  • 著者名/発表者名: M.ARIVANANDHAN, R.GOTOH, T.WATAHIKI, K.FUJIWARA, Y.HAYAKAWA, M.KONAGAI, S.UDA
  • 学会等名: 41^<st> National Conference on Crystal Growth
  • 発表場所: Tsukuba Conference Center (Tsukuba, Japan)
  • 年月日: 2011-11-05
• [学会発表] Preparation and thermoelectric properties of compositionally homogeneousMg_2Si_<1-x> Ge_x (2011)
  • 著者名/発表者名: M. Arivanandhan, Y. Saito, T. Koyama, Y. Momose, A. Tanaka, H. Ikeda, H. Tatsuoka, A. Ishida, D. K. Aswal, S. Moorthy Babu, Y. Inatomi, Y. Hayakawa
  • 学会等名: 41^<st> National Conference on Crystal Growth
  • 発表場所: Tsukuba, Japan
  • 年月日: 2011-11-03
• [学会発表] Investigation of solute transport mechanism in GaSb/InSb/GaSb sandwich structure under 1G and 10^<-4> Gconditions by in-situ X-ray penetration and numerical methods (2011)
  • 著者名/発表者名: Govindasamy Rajesh, Mukannan Arivanandhan, Natsuki Suzuki, Hisashi Morii, ToruAoki, Tadanobu Koyama, Yoshimi Momose, Akira Tanaka, Youhei Takagi, Yasunori Okano, Tetsuo Ozawa, YukoInatomi, Yasuhiro Hayakawa
  • 学会等名: 41^<st> National Conference on Crystal Growth
  • 発表場所: Tsukuba, Japan
  • 年月日: 2011-11-03
• [学会発表] Enhancement of Photovoltaic characteristics of CZ grown-Si by Gecodoping (2011)
  • 著者名/発表者名: M. Arivanandhan, R. Gotoh, T. Watahiki, K. Fujiwara, Y. Hayakawa, S. Uda and M. Konagai
  • 学会等名: Invited Seminar at Department of Physics
  • 発表場所: Alagappa University(Karaikudi, India)
  • 年月日: 2011-10-12
• [学会発表] Enhancement of Photovoltaic characteristics of CZ grown-Si by Ge codoping (2011)
  • 著者名/発表者名: M.ARIVANANDHAN, R.GOTOH, T.WATAHIKI, K.FUJIWARA, Y.HAYAKAWA, S.UDA, M.KONAGAI
  • 学会等名: Invited Seminar at Department of Physics, Alagappa University
  • 発表場所: Alagappa University (Karaikudi, India)(Invited)
  • 年月日: 2011-10-12
• [学会発表] Thermoelectric properties of compositionally homogeneous Si_<1-x> Gex and Mg_2Si_<1-x> Ge_x bulk crystals (2011)
  • 著者名/発表者名: M. Arivanandhan, Y. Saito, T. Koyama, Y. Momose, A. Tanaka, H. Ikeda, T. Tatsuoka, A. Ishida, S. Bhattacharya, D. K. Aswal, S. Moorthy Babu, Y. Inatomi, Y. Hayakawa
  • 学会等名: Seminar at Anna University
  • 発表場所: Anna University(Chennai, India)
  • 年月日: 2011-10-10
• [学会発表] Thermoelectric properties of compositionally homogeneous Si1-xGex and Mg2Si1-xGex bulk crystals (2011)
  • 著者名/発表者名: M.ARIVANANDHAN, Y.SAITO, T.KOYAMA, Y.MOMOSE, A.TANAKA, H.IKEDA, T.TATSUOKA, A.ISHIDA, S.BHATTACHARYA, D.K.ASWAL, S.MOORTHY BABU, Y.INATOMI, Y.HAYAKAWA
  • 学会等名: Invited Seminar at Crystal Growth Centre, Anna University
  • 発表場所: Anna University (Chennai, India)(Invited)
  • 年月日: 2011-10-10
• [学会発表] Thermoelectric properties of homogeneous Si1-xGex and Mg2Si1-xGex bulk crystals (2011)
  • 著者名/発表者名: M.ARIVANANDHAN, Y.SAITO, T.KOYAMA, Y.MOMOSE, A.TANAKA, H.IKEDA, T.TATSUOKA, A.ISHIDA, S.BHATTACHARYA, D.K.ASWAL, S.MOORTHY BABU, Y.INATOMI, Y.HAYAKAWA
  • 学会等名: Autumn meetings of Japanese society for applied physics (JSAP)
  • 発表場所: Yamagata Univ.(Yamagata, Japan)
  • 年月日: 2011-09-02
• [学会発表] The effect of gravity on the dissolution process of GaSb into InSb melt : Experiment and Simulations (2011)
  • 著者名/発表者名: G. Rajesh, M. Arivanandhan, H. Morii, N. Suzuki, T. Aoki, T. Koyama, Y. Momose, A. Tanaka, Y. Okano, T. Ozawa, Y. Inatomi, Y. Hayakawa
  • 学会等名: Autumn Meeting of Japan Society of Applied Physics
  • 発表場所: Japan
  • 年月日: 2011-08-29
• [学会発表] Bulk growth of InGaSb alloy semiconductor under terrestrial conditions : A preliminary study for microgravity experiment at ISS (2011)
  • 著者名/発表者名: M. Arivanandhan, G. Rajesh, A. Tanaka, T. Ozawa, Y. Okano, Y. Inatomi, Y. Hayakawa
  • 学会等名: 8^<th> International conference on diffusion in materials(DIMAT-2011)
  • 発表場所: Dijon, France
  • 年月日: 2011-07-05
• [学会発表] Thermoelectric Properties of Compositionally Homogeneous Si_<1-x>Ge_x Bulk Crystals (2011)
  • 著者名/発表者名: M.ARIVANANDHAN, Y.SAITO, T.KOYAMA, Y.MOMOSE, A.TANAKA, H.IKEDA, H.TATSUOKA, A.ISHIDA, D.K.ASWAL, S.MOORTHY BABU, Y.INATOMI, Y.HAYAKAWA
  • 学会等名: 第58回応用物理学関係連合講演会
  • 発表場所: 神奈川工科大学(神奈川県厚木市)
  • 年月日: 2011-03-26
• [学会発表] 混晶半導体バルク結晶成長に対する重力効果 (2011)
  • 著者名/発表者名: 早川泰弘、M.ARIVANANDHAN、G.RAJESH、小山忠信、百瀬与志美、森井久史、青木徹、田中昭、鈴木那津輝、岡野泰則、小澤哲夫、稲富裕光
  • 学会等名: 第58回応用物理学関係連合講演会
  • 発表場所: 神奈川工科大学(神奈川県厚木市)
  • 年月日: 2011-03-25
• [学会発表] X線画像検出器を用いた混晶半導体バルク結晶成長過程の観察 (2011)
  • 著者名/発表者名: 早川泰弘、田中昭、青木徹、M.ARIVANANDHAN、小山忠信、百瀬与志美、G.RAJESH、森井久史、小澤哲夫、岡野泰則、稲富裕光
  • 学会等名: 静岡大学重点4分野 極限画像科学シンポジウム
  • 発表場所: 静岡大学(静岡県浜松市)
  • 年月日: 2011-03-14
• [学会発表] Effect of Gravity on dissolution process of GaSb into InSb melt (2010)
  • 著者名/発表者名: M. Arivanandhan, H. Morii, N. Suzuki, T. Aoki, T. Koyama, Y. Momose, A. Tanaka, K. Sankaranarayanan, Y. Okano, T. Ozawa, Y. Inatomi, Y. Hayakawa
  • 学会等名: 8^<th> Japan-China-Korea workshop on Microgravity Sciences for Asian Microgravity pre-Symposium
  • 発表場所: Akiu, Sendai, Japan
  • 年月日: 2010-09-25
• [学会発表] Ge共添加によるGa添加CZ-Si単結晶の偏析現象の解析および特性の改善 (2010)
  • 著者名/発表者名: 後藤頼良、Mukannan Arivanandhan、藤原航三、宇田聡
  • 学会等名: 日本金属学会秋季学術講演会
  • 発表場所: 北海道大学(札幌)
  • 年月日: 2010-09-25
• [学会発表] Crystal growth of InGaSb alloy semiconductor at International Space Station : Preliminary experiments (2010)
  • 著者名/発表者名: M. Arivanandhan, G. Rajesh, T. Koyama, Y. Momose, K. Sankaranarayanan, A. Tanaka, Y. Hayakawa, T. Ozawa, Y. Okano, and Y. Inatomi
  • 学会等名: 8^<th> Japan-China-Korea workshop on Microgravity Sciences for Asian Microgravity pre-Symposium
  • 発表場所: Akiu, Sendai, Japan
  • 年月日: 2010-09-24
• [学会発表] Semiconductor alloy crystals under microgravity conditions (2010)
  • 著者名/発表者名: Yasuhiro Hayakawa, Mukannan Arivanandhan, Govindasamy Rajesh, Akira Tanaka, Tetsuo Ozawa, Yasunori Okano, Krishnasamy Sankaranarayanan, Yuko Inatomi
  • 学会等名: International Conference on Physics of Emerging Functional Materials(PEFM 2010)
  • 発表場所: BARC, India
  • 年月日: 2010-09-24
• [学会発表] Crystal growth of InGaSb alloy semiconductor at International Space Station : Preliminary experiments (2010)
  • 著者名/発表者名: M.ARIVANANDHAN, G.RAJESH, T.KOYAMA, Y.MOMOSE, K.SANKARANARAYANAN, A.TANAKA, Y.HAYAKAWA, T.OZAWA, Y.OKANO, Y.INATOMI
  • 学会等名: 8^<th> Japan-China-Korea Workshop, Microgravity Sciences for Asia Microgravity Pre-Symposium
  • 発表場所: Akiu, Sendai, Japan
  • 年月日: 2010-09-24
• [学会発表] Effect of Gravity on the Dissolution Process of GaSb into InSb Melt (2010)
  • 著者名/発表者名: G.RAJESH, M.ARIVANANDHAN, H.MORII, N.SUZUKI, T.AOKI, T.KOYAMA, Y.MOMOSE, A.TANAKA, K.SANKARANARAYANAN, Y.OKANO, T.OZAWA, Y.INATOMI, Y.HAYAKAWA
  • 学会等名: 8^<th> Japan-China-Korea Workshop, Microgravity Sciences for Asia Microgravity Pre-Symposium
  • 発表場所: Akiu, Sendai, Japan
  • 年月日: 2010-09-24
• [学会発表] Semiconductor Alloy Crystal Growth under Microgravity (2010)
  • 著者名/発表者名: Y.HAYAKAWA, M.ARIVANANDHAN, GRAJESH, A.TANAKA, T.OZAWA, Y.OKANO, K.SANKARANARAYANAN, Y.INATOMI
  • 学会等名: International Conference on Physics of EmergingFunctional Materials
  • 発表場所: Bahba Atomic Research Center, Mumbai, India
  • 年月日: 2010-09-14
• [学会発表] The Effect of Gravity on the Dissolution Process of GaSb into InSb Melt : Experiments and Simulations (2010)
  • 著者名/発表者名: G.RAJESH, M.ARIVANANDHAN, H.MORII, N.SUZUKI, T.AOKI, T.KOYAMA, Y.MOMOSE, A.TANAKA, K.SANKARANARAYANAN, Y.OKANO, T.OZAWA, Y.INATOMI, Y.HAYAKAWA.
  • 学会等名: 第71回応用物理学会学術講演会
  • 発表場所: 長崎大学(長崎県長崎市)
  • 年月日: 2010-09-14
• [学会発表] 微小重力環境下におけるInGaSb混晶成長実験のための予備的研究 (2010)
  • 著者名/発表者名: A.SUZUKI, T.YOUHEI, Y.OKANO, G.RAJESH, M.ARIVANANDHAN, Y.HAYAKAWA, A.TANAKA
  • 学会等名: 化学工学会第42回秋季大会
  • 発表場所: 同志社大学(京都)
  • 年月日: 2010-09-06
• [学会発表] Growth of Si_<1-x>Ge_x Bulk Crystals with Highly Homogeneous Composition for Thermoelectric Applications (2010)
  • 著者名/発表者名: M.ARIVANANDHAN, Y.SAITO, T.KOYAMA, Y.MOMOSE, H.IKEDA, A.TANAKA, T.TATSUOKA, D.K.ASWAL, Y.INATOMI, Y.HAYAKAWA
  • 学会等名: The Sixteenth International Conference on Crystal Growth in Conjunction with The Fourteenth International Conference on Vapor Growth and Epitaxy
  • 発表場所: Beijing International Convention Center, Beijing, China
  • 年月日: 2010-08-12
• [学会発表] Growth of Si_<1-x> Ge_x bulk crystals with highly homogeneous composition for thermoelectric applications (2010)
  • 著者名/発表者名: M. Arivanandhan, Y. Saito, T. Koyama, Y. Momose, H. Ikeda, A. Tanaka, T. Tatsuoka, D. K. Aswal, Y. Inatomi, Y. Hayakawa
  • 学会等名: 16^<th> International Conference on Crystal Growth(ICCG16)
  • 発表場所: Beijing, China
  • 年月日: 2010-08-11
• [学会発表] Analysis of Ga segregation behavior inCZ-Si crystal growth (2010)
  • 著者名/発表者名: R. Gotoh, M. Arivanandhan, K. Fujiwara, S. Uda
  • 学会等名: 16^<th> International Conference on Crystal Growth(ICCG16)
  • 発表場所: Beijing, China
  • 年月日: 2010-08-09
• [学会発表] Effect of oxygen on defect reaction mechanism in Ga and Ge codoped Czochralski-silicon (2010)
  • 著者名/発表者名: M. Arivanandhan, R. Gotoh, K. Fujiwara, T. Ozawa, Y. Hayakawa, S. Uda
  • 学会等名: 16^<th> International Conference on Crystal Growth(ICCG16)
  • 発表場所: Beijing, China
  • 年月日: 2010-08-09
• [学会発表] Effect of Oxygen on Defect Reaction Mechanism in Ga and Ge Codoped Czochralski-Silicon (2010)
  • 著者名/発表者名: M.ARIVANANDHAN, R.GOTOH, K.FUJIWARA, T.OZAWA, Y.HAYAKAWA, S.UDA
  • 学会等名: The Sixteenth International Conference on Crystal Growth in Conjunction with The Fourteenth International Conference on Vapor Growth and Epitaxy
  • 発表場所: Beijing International Convention Center, Beijing, China
  • 年月日: 2010-08-09
• [学会発表] Analysis of Ga Segregation Behavior in CZ-Si Crystal Growth with Gecodoping (2010)
  • 著者名/発表者名: R.GOTOH, M.ARIVANANDHAN, K.FUJIWARA, S.UDA
  • 学会等名: The Sixteenth International Conference on Crystal Growth in Conjunction with The Fourteenth International Conference on Vapor Growth and Epitaxy
  • 発表場所: Beijing International Convention Center, Beijing, China
  • 年月日: 2010-08-09
• [学会発表] Growth of Homogeneous Mg_2Si_<1-x>Ge_x Crystals for Thermoelectric Application (2010)
  • 著者名/発表者名: Y.HAYAKAWA, M.ARIVANANDHAN, Y.SAITO, T.KOYAMA, Y.MOMOSE, H.IKEDA, A.TANAKA, C.WEN, Y.KUBOTA, T.NAKAMURA, D.K.ASWAL, S.BHATTACHARY, S.MOORTHY BABU, Y.INATOMI, H.TATSUOKA
  • 学会等名: Asia-Pacific Conference on Semiconducting Silicides and Related Materials Science and Technology towards Sustainable Optoelectronics
  • 発表場所: EPOCAL Tsukuba, Tsukuba, Ibaraki, Japan
  • 年月日: 2010-07-26
• [学会発表] Enhancement of Ga doping in Czochralski-grown Si crystal and improvement of minority carrier lifetime by B-or Ge-codoping for PV application (2010)
  • 著者名/発表者名: S. Uda, M. Arivanandhan, R. Gotoh, K. Fujiwara
  • 学会等名: Institute of Crystal Growth
  • 発表場所: Berlin, Germany
  • 年月日: 2010-07-09
• [学会発表] Enhancement of Ga Doping in Czochralski-grown Si crystal and Improvement of Minority Carrier Lifetime by B- or Ge- Codoping for PV Application (2010)
  • 著者名/発表者名: S.UDA, M.ARIVANANDHAN, R.GOTOH, K.FUJIWARA
  • 学会等名: Colloquium of Leibniz Institute for Crystal Growth
  • 発表場所: Leibniz Institute for Crystal Growth (Berlin, Germany)
  • 年月日: 2010-07-09
• [学会発表] Growth of Homogeneous Mg2Si1-xGexCrystals for Thermoelectric Application (2010)
  • 著者名/発表者名: Mukannan Arivanandhan, Yosuke Saito, Tadanobu Koyama, Yoshimi Momose, Wen, Yoshihiro Kubota, Tamotsu Nakamura, Dinesh Kumar Aswal, Shovit Bhattachary, Yuko Inatomi and Hirokazu Tatsuoka
  • 学会等名: Asia-Pacific conference on semiconducting silicides and related to materials Science and Technology towards sustainable optoelectronics(APAC-SILICIDE 2010)
  • 発表場所: Tsukuba, Japan
  • 年月日: 2010-07-06
• [学会発表] Effect of Gravity on the Growth of Ternary Alloy Semiconductor Bulk Crystals (2010)
  • 著者名/発表者名: Y.HAYAKAWA, M.ARIVANANDHAN, G.RAJESH, T.KOYAMA, Y.MOMOSE, H.MORII, T.AOKI, T.KOYAMA, Y.OKANO, T.OZAWA, Y.INATOMI
  • 学会等名: 電子情報通信学会、電子部品・材料研究会
  • 発表場所: 静岡大学(静岡県浜松市)
  • 年月日: 2010-05-13
• [学会発表] Microgravity Experiments for the Growth of III-V Ternary Crystals (2010)
  • 著者名/発表者名: Y. Hayakawa, M. Arivanandhan, G. Rajesh, T. Koyama, Y. Momose, H. Morii, T. Aoki, A. Tanaka, T. Ozawa and Y. Inatomi
  • 学会等名: Seminar at Periyar University
  • 発表場所: Salem, India
  • 年月日: 2010-02-23
• [備考]
  • URL: http://maruhan.rie.shizuoka.ac.jp/
• [備考]
  • URL: http://maruhan.rie.shizuoka.ac.jp/
• [産業財産権] シリコン結晶、シリコン結晶の製造方法およびシリコン多結晶インゴットの製造方法 (2011)
  • 発明者名: 宇田聡、M. Arivanandhan、後藤頼良、藤原航三、早川泰弘
  • 権利者名: 宇田聡、M. Arivanandhan、後藤頼良、藤原航三、早川泰弘
  • 産業財産権番号: 2011-067402
  • 出願年月日: 2011-03-25
• [産業財産権] High quality crystalline Silicon with low light induced degradation and its Growth Method (2011)
  • 発明者名: S.Uda, M.Arivanandhan, R.Gotoh, K.Fujiwara, Y.Hayakawa
  • 権利者名: S.Uda, M.Arivanandhan, R.Gotoh, K.Fujiwara, Y.Hayakawa
  • 出願年月日: 2011-03-25
• [産業財産権] シリコン結晶、シリコン結晶の製造方法およびシリコン多結晶インゴットの製造方法 (2011)
  • 発明者名: 宇田聡、M.Arivanandhan、後藤頼良、藤原航三、早川泰弘
  • 権利者名: 宇田聡、M.Arivanandhan、後藤頼良、藤原航三、早川泰弘
  • 産業財産権番号: 2011-067402
  • 出願年月日: 2011-03-25