| 研究課題/領域番号 |
22K04216
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| 研究種目 |
基盤研究(C)
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| 配分区分 | 基金 |
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| 応募区分 | 一般 |
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| 審査区分 |
小区分21060:電子デバイスおよび電子機器関連
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| 研究機関 | 静岡大学 |
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研究代表者 |
Moraru Daniel 静岡大学, 電子工学研究所, 准教授 (60549715)
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| 研究期間 (年度) |
2022-04-01 – 2025-03-31
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| 研究課題ステータス |
交付 (2023年度)
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| 配分額 *注記 |
4,160千円 (直接経費: 3,200千円、間接経費: 960千円)
2024年度: 780千円 (直接経費: 600千円、間接経費: 180千円)
2023年度: 1,430千円 (直接経費: 1,100千円、間接経費: 330千円)
2022年度: 1,950千円 (直接経費: 1,500千円、間接経費: 450千円)
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| キーワード | silicon-on-insulator / pn diode / doping / single-charge tunneling / nanowire / codoping / Esaki diode / single-electron / donor-acceptor pair / band-to-band tunneling / nanoscale / dopant quantum dot / silicon nanodevices / wavefunction / phonon |
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| 研究開始時の研究の概要 |
Band-to-band tunneling in Si nanodevices can allow the development of a variety of applications and the exploration of the properties of nanoscale depletion layers. A key aspect is related to the atomistic effects arising from dopant atoms inside and at the edges of the depletion layers.
This project will explore the impact of such discrete dopants on band-to-band tunneling, revealing key mechanisms and critical factors for further optimization.
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| 研究実績の概要 |
Some achievements have been obtained directly in the present project, while others are tangentially related.
As a main result related to this project, we reported challenges in fabrication of silicon nanowire tunnel diodes. We also reported observation of single-electron tunneling in codoped silicon nanodevices made from silicon-on-insulator (SOI) nano-transistors and nano-diodes. Collaborative research work focused on optical characterization techniques that may be useful for Si nanodevices.
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| 現在までの達成度 (区分) |
現在までの達成度 (区分)
2: おおむね順調に進展している
理由
As planned, new batches of silicon-on-insulator (SOI) nano-transistors and nano-diodes have been fabricated and characterized. The detailed analysis of these two types of devices, both containing codoped SOI nanoscale regions, confirmed the identification of signatures of single-charge tunneling, as reported in Nanomaterials (2023).
Our analysis also revealed the most important challenges in terms of technology for fabricating silicon nanowire tunnel diodes, as reported in another paper.
New techniques of investigation have been developed in different collaboration projects, with potential impact on the analysis of devices included in the current project.
The progress in first-principles simulations is less advanced, but studies of pn diodes containing individual dopants are under way.
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| 今後の研究の推進方策 |
In the next stage of research, the fabricated nano-transistors and nano-diodes will be characterized systematically in order to understand the possibility of tunneling transport mediated by dopants in such nanoscale devices. Mainly, the characterization will be carried out at cryogenic temperatures.
The effect of light illumination will also be analyzed in such codoped nanodevices, which offer the energy states to capture both electrons and holes from the absorbed photons.
The analysis of single-charge tunneling transport at low temperatures is expected to provide deeper insights into the role of dopants, supporting the undergoing first-principles simulation analysis.
A systematic characterization of SOI samples doped in different conditions will also provide new information.
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