| 研究課題/領域番号 |
22K04885
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| 研究種目 |
基盤研究(C)
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| 配分区分 | 基金 |
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| 応募区分 | 一般 |
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| 審査区分 |
小区分28030:ナノ材料科学関連
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| 研究機関 | 国立研究開発法人物質・材料研究機構 |
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研究代表者 |
J. Wipakorn 国立研究開発法人物質・材料研究機構, ナノアーキテクトニクス材料研究センター, 主任研究員 (40748216)
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| 研究期間 (年度) |
2022-04-01 – 2025-03-31
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| 研究課題ステータス |
交付 (2023年度)
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| 配分額 *注記 |
4,160千円 (直接経費: 3,200千円、間接経費: 960千円)
2024年度: 1,430千円 (直接経費: 1,100千円、間接経費: 330千円)
2023年度: 1,430千円 (直接経費: 1,100千円、間接経費: 330千円)
2022年度: 1,300千円 (直接経費: 1,000千円、間接経費: 300千円)
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| キーワード | Nanowire / Nanostructure / Vapor-liquid-solid / CVD / Aluminum / Silicon / Nanowires / Germanium / Heterojunction |
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| 研究開始時の研究の概要 |
The study of hole-gas accumulation for HEMT applications on Si/Ge core-shell NW heterostructures using Al as a catalyst for core SiNW synthesis is the main research purpose. The bottom-up approach of the VLS growth using a CVD system is a key research method. The unique characteristics of controllable vertical growth and smooth surface with automated Al doping in Al-catalyzed SiNWs suggest the major advantages for the application of vertical SiNW-based HEMT devices. The hole gas accumulation in core-shell NWs will be examined by Raman measurement and the fitting to the Fano equation.
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| 研究実績の概要 |
Al-catalyzed Si nanowires (NWs) formed by vapor-liquid-solid growth for high mobility field-effect transistor (HEMT) and photovoltaic cell applications were continuously investigated.
The vertically aligned Al-catalyzed SiNWs with smooth surfaces and single crystalline properties while addressing the issue of metal catalyst contamination have successfully proven the notable advantage of Si/Ge heteroarchitectures in their ability to enhance hole gas accumulation through bandgap engineering design. Various p-Si/i-Ge core-shell heterostructures with the addition of intermediate or/and outermost B-doped p+-Si shell were investigated to maximize hole gas accumulation in the Ge channel layer, with a focus on monitoring their core-shell structures, interfaces, and crystalline properties.
Exploring the physical and optical properties of nanodots at both room and low temperatures for photovoltaic applications has contributed to a deeper understanding of functionalization techniques aimed at enhancing SiNW-based solar cells.
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| 現在までの達成度 (区分) |
現在までの達成度 (区分)
2: おおむね順調に進展している
理由
The studies on exploring the functionality of Al-catalyzed SiNWs were well-progressed as explained in the research achievement part. The experiments on sample preparations and characterizations could smoothly proceed following the research plan. The laboratory consumables and facilities could be provided without any trouble.
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| 今後の研究の推進方策 |
In this fiscal year, the experimental results will be continuously presented. More manuscripts will be submitted for publication. Extended investigation on Al-catalyzed SiNW size and position controls including the interface passivation for double-hetero Si/Ge core-shell NW structures and their effects on hole-gas accumulation will be elucidated. Various nanodots for photovoltaic applications will be observed in their physical and optical properties to enhance Al-catalyzed SiNW-based solar cells.
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