研究課題/領域番号 |
22K14143
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研究種目 |
若手研究
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配分区分 | 基金 |
審査区分 |
小区分18010:材料力学および機械材料関連
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研究機関 | 大阪大学 |
研究代表者 |
LI YAN 大阪大学, 大学院基礎工学研究科, 助教 (70930171)
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研究期間 (年度) |
2022-04-01 – 2024-03-31
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研究課題ステータス |
完了 (2023年度)
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配分額 *注記 |
4,550千円 (直接経費: 3,500千円、間接経費: 1,050千円)
2023年度: 1,820千円 (直接経費: 1,400千円、間接経費: 420千円)
2022年度: 2,730千円 (直接経費: 2,100千円、間接経費: 630千円)
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キーワード | compound semiconductors / crystal plasticity / dislocations / oxides / nitrides / photoindentation / Photoindentation / ウルツ鉱型結晶 / 力学特性 / 転位 |
研究開始時の研究の概要 |
The influence of light illumination on the mechanical properties of semiconductors has drawn increasing attention recently. Research on ZnS has demonstrated large plasticity in complete darkness. Extending research to other materials will open up the possibility of tuning material properties by controlling the light environment. In this research, we will study the effects of light on different slip systems in wurtzite crystals, which will greatly contribute to innovating the processing methods for modifying the plasticity of brittle materials.
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研究実績の概要 |
This project studies dislocation-based plasticity in wurtzite semiconductors and investigates how light affects their nanoscale mechanical properties. In FY2023, we examined the effects of light on different slip systems in ZnO and GaN. Photoindentation experiments were conducted on wurtzite ZnO and GaN single crystals. Transmission electron microscope was adopted to verify the impact of light on dislocation behaviors. It was found that light tends to suppress the motion of both basal dislocations and pyramidal dislocations. Additionally, the unique distribution of nanoindentation-induced dislocations in ZnO should display promising functional properties. As for GaN, light illumination slightly affects dislocation nucleation, and shows a detectable influence on dislocation motion.
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