研究課題/領域番号 |
22KF0070
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補助金の研究課題番号 |
21F21364 (2021-2022)
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研究種目 |
特別研究員奨励費
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配分区分 | 基金 (2023) 補助金 (2021-2022) |
応募区分 | 外国 |
審査区分 |
小区分19020:熱工学関連
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研究機関 | 東京大学 |
研究代表者 |
丸山 茂夫 東京大学, 大学院工学系研究科(工学部), 教授 (90209700)
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研究分担者 |
FENG YA 東京大学, 大学院工学系研究科(工学部), 外国人特別研究員
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研究期間 (年度) |
2023-03-08 – 2024-03-31
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研究課題ステータス |
交付 (2023年度)
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配分額 *注記 |
2,200千円 (直接経費: 2,200千円)
2023年度: 500千円 (直接経費: 500千円)
2022年度: 900千円 (直接経費: 900千円)
2021年度: 800千円 (直接経費: 800千円)
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キーワード | SWCNTs / BNNT / TEM / 1D vdW heterostructure / thermal transport / Raman / 1D heterostructures / Raman spectroscopy |
研究開始時の研究の概要 |
Optimization of the special substrate fabrication and the material growth conditions to produce the three-layer van der Waals heterostructure nanotubes for device applications. Examining the fine structure and properties of the target nanotubes by TEM and Raman spectroscopy. Studying their working mechanism in opto/electronic applications.
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研究実績の概要 |
Ultralong single-walled carbon nanotubes had been prepared on the specially designed DIY TEM grid and their thermal properties were carefully studied by Raman spectroscopy. Meanwhile, their atomic structure had been determined by TEM. One the other hand, one-dimensional van der Waals heterostructure nanotubes were successfully built on atomically precise single-walled carbon nanotubes.
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現在までの達成度 (区分) |
現在までの達成度 (区分)
2: おおむね順調に進展している
理由
The plan set for 2022 has been achieved. We can massively fabricate the specially designed DIY TEM grid by MEMS. This special TEM grid allowed us to study the thermal transport of the long suspended single-walled carbon nanotubes synthesized on it through optothermal Raman technique, and also enabled TEM observation of the atomic structure of the sample under investigation. Therefore, the unclear relation between thermal conductivity and atomic structure of carbon nanotubes can be determined by this unique technique. One-dimensional van der Waals heterostructure also had realized on these several micro-meter long nanotubes, which also had been confirmed by TEM. Moreover, we had built one-dimensional van der Waals heterostructures on atomically precise single-walled carbon nanotubes, that is to say, on chirality-specific single-walled carbon nanotubes.
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今後の研究の推進方策 |
BNNT thickness engineering to search for the best top-gated FET performances by gating on BNNT layer; Optimizing the etching parameters before metal deposition to selectively remove BNNT but not SWCNT in order to enhance contacts. Synthesizing SWCNT-BNNT-SWCNT van der Waals heterostructure. The outmost SWCNT would be metallic due to the very large diameter, therefore, we might be able to deliver a gate-all-around FET by the simplest fabrication method.
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