| 研究実績の概要 |
The unexplored terahertz (THz) frequency range, which lies between light waves and radio waves, has attracted the attention of numerous researchers and continues to develop. THz waves are expected to find applications in non-destructive detections, medical diagnosis, and 6G high-speed communication. On the other hand, layered compounds, including graphene, have advantages such as ultra-high mobility as well as the ability to fabricate devices by mechanical exfoliation and stacking. The purpose of this research is to create a new principle device by heterostacking two-dimensional semimetal with two-dimensional semiconductor structures, and to demonstrate its feasibility as a terahertz light source. In this research, Firstly, in a novel structure of graphene THz detector, named as single asymmetric gated graphene field effect transistor (AG-GFET), the relationship between responsivity in THz range and device parameters like channel length and dielectric layer thickness has been investigated. Secondly, the THz detection implemented with an epitaxial-graphene asymmetric dual-grating-gate field-effect transistor (EG-ADGG-GFET) has been successfully conducted, indicating the fast and high-sensitive properties of EG-ADGG-GFET devices.
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