| 研究実績の概要 |
The study on vacancies in 2D materials impacting magnetic tunnel junction (MTJ) device performance has progressed significantly. Utilizing density functional theory (DFT), monoatomic vacancies in hexagonal boron nitride (hBN) and graphene layers were investigated. Vacancies were found to create distinct transmission channels for spin-majority and spin-minority channels, influenced by the proximity effect and vacancy layer's localized state.
A novel van der Waals-based MTJ design was proposed, comprising hBN(VB)/Graphene(Gr)/hBN(VB) with strategically positioned monoatomic vacancies. Non-equilibrium Green's function (NEGF) simulations, coupled with DFT data, showed a TMR ratio of approximately 400%, marking a significant advancement in thin structure MTJs. This design underscores the potential of defective 2D materials in enhancing magnetic random-access memory (MRAM) devices and optimizing neuromorphic devices.
The research reveals the intricate relationship between vacancies in 2D materials and MTJ device performance, offering new avenues for device optimization. The proposed MTJ design with monoatomic vacancies demonstrates remarkable potential for improving TMR ratios and advancing MRAM devices, highlighting the importance of defective 2D materials in next-generation electronic and magnetic devices. Furthermore, the engineering of the vacancy opens up the possible application of 2D materials MTJ as a potential neuromorphic device.
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