IV族半導体高度歪量子ヘテロ共鳴トンネル素子の高性能化プロセス

• 研究課題/領域番号: 23360003
• 研究種目: 基盤研究(B)
• 配分区分: 補助金
• 応募区分: 一般
• 研究分野: 応用物性・結晶工学
• 研究機関: 東北大学
• 研究代表者: 櫻庭 政夫 東北大学, 電気通信研究所, 准教授 (30271993)
• 研究分担者: 室田 淳一 東北大学, 電気通信研究所, 教授 (70182144)
• 研究期間 (年度): 2011-04-01 – 2014-03-31
• 研究課題ステータス: 完了 (2013年度)
• 配分額: 20,410千円 (直接経費: 15,700千円、間接経費: 4,710千円); 2013年度: 7,020千円 (直接経費: 5,400千円、間接経費: 1,620千円); 2012年度: 7,410千円 (直接経費: 5,700千円、間接経費: 1,710千円); 2011年度: 5,980千円 (直接経費: 4,600千円、間接経費: 1,380千円)
• キーワード: エピタキシャル成長 / プラズマ / 化学気相成長 / IV族半導体 / Si / Ge / SiGe混晶 / ドーピング / ヘテロ構造 / 量子デバイス / 室温動作

研究概要

基板非加熱での電子サイクロトロン共鳴プラズマ化学気相成長法により、Si(100)上に平坦かつ高度歪が導入されたSiGe混晶及びGe薄膜のエピタキシャル成長が実現され、SiとGeのエピタキシャル成長における高濃度Bドーピングも可能となった。高Ge比率SiGe系ナノスケール量子ヘテロ構造製作プロセスについても研究を進め、Si障壁層中への高濃度N原子層ドーピングが可能となる条件を確認し、SiGe(C)系IV族半導体共鳴トンネルダイオードにおける共鳴トンネル特性への影響を調べた。

研究成果

• [雑誌論文] Epitaxial Growth of B-Doped Si on Si(100) by Electron-Cyclotron- Resonance Ar Plasma Chemical Vapor Deposition in a SiH_4-B_2H_6-H_2 Gas Mixture without Substrate (2014)
  • 著者名/発表者名: Y.Abe, M.Sakuraba and J.Murota
  • 雑誌名: Thin Solid Films 巻: Vol.557 ページ: 10-13
  • DOI: 10.1016/j.tsf.2013.08.118
  • 査読あり
• [雑誌論文] Epitaxial Growth of Si1-xGex Alloys and Ge on Si(100) by Electron-Cyclotron-Resonance Ar Plasma Chemical Vapor Deposition without Substrate Heating (2014)
  • 著者名/発表者名: N.Ueno, M.Sakuraba, S.Sato and J.Murota
  • 雑誌名: Thin Solid Films 巻: Vol.557 ページ: 31-35
  • DOI: 10.1016/j.tsf.2013.11.023
  • 査読あり
• [雑誌論文] Nitrogen Doping Effect upon Hole Tunneling Characteristics of Si Barriers in Si_<1-x>Ge_x/Si Resonant Tunneling Diode (2014)
  • 著者名/発表者名: T.Kawashima, M.Sakuraba and J.Murota
  • 雑誌名: Thin Solid Films 巻: Vol.557 ページ: 302-306
  • DOI: 10.1016/j.tsf.2013.08.124
  • 査読あり
• [雑誌論文] Group-IV Semiconductor Quantum Heterointegration by Low-Energy Plasma CVD Processing (2013)
  • 著者名/発表者名: M.Sakuraba and J.Murota
  • 雑誌名: ECS Trans. 巻: Vol.58, No.9 号: 9 ページ: 195-200
  • DOI: 10.1149/05809.0195ecst
  • 査読あり
• [雑誌論文] Formation and Characterization of Strained Si_<1-x>Ge_x Films Epitaxially Grown on Si(100) by Low-Energy ECR Ar plasma CVD without Substrate Heating (2013)
  • 著者名/発表者名: N.Ueno, M.Sakuraba, J.Murota and S.Sato
  • 雑誌名: ECS Trans. 巻: Vol.58, No.9 号: 9 ページ: 207-211
  • DOI: 10.1149/05809.0207ecst
  • 査読あり
• [雑誌論文] Epitaxial Growth of Heavily B-Doped Si and Ge Films on Si(100) by Low-Energy ECR Ar Plasma CVD without Substrate Heating (2013)
  • 著者名/発表者名: Y.Abe, S.Kubota, M.Sakuraba, J.Murota and S.Sato
  • 雑誌名: ECS Trans. 巻: Vol.58, No.9 号: 9 ページ: 223-228
  • DOI: 10.1149/05809.0223ecst
  • 査読あり
• [雑誌論文] Behavior of N Atoms after Thermal Nitridation of Si_<1-x>Ge_x Surface (2012)
  • 著者名/発表者名: T.Kawashima, M.Sakuraba, B.Tillack and J.Murota
  • 雑誌名: Thin Solid Films 巻: Vol.520 号: 8 ページ: 3392-3396
  • DOI: 10.1016/j.tsf.2011.10.108
  • 査読あり
• [雑誌論文] Atomically Controlled Formation of Strained Si_<1-x>Ge_x/Si Quantum Heterostructure for Room- Temperature Resonant Tunneling Diode (2011)
  • 著者名/発表者名: M.Sakuraba and J.Murota
  • 雑誌名: ECS Trans. 巻: Vol.41,No.7 号: 7 ページ: 337-343
  • DOI: 10.1149/1.3633314
  • 査読あり
• [雑誌論文] Atomically Controlled Plasma Processing for Quantum Heterointegration of Group IV Semiconductors (2011)
  • 著者名/発表者名: M.Sakuraba and J.Murota
  • 雑誌名: ECS Trans. 巻: Vol.41, No.7 号: 7 ページ: 309-314
  • DOI: 10.1149/1.3633311
  • 査読あり
• [学会発表] Characterization of Strain in Si_<1-x>Ge_x Films Epitaxially Grown on Si(100) by ECR Ar Plasma CVD without Substrate Heating (2014)
  • 著者名/発表者名: N.Ueno, M.Sakuraba, J.Murota and S. ato
  • 学会等名: 7th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
  • 発表場所: Tohoku Univ., Sendai, Japan (Abs.No.P-21)
• [学会発表] Characterization of Strain in Si1-xGex Films Epitaxially Grown on Si(100) by ECR Ar Plasma CVD without Substrate Heating (2014)
  • 著者名/発表者名: N. Ueno, M. Sakuraba, J. Murota and S. Sato
  • 学会等名: 7th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", Abs.No.P-21.
  • 発表場所: Sendai, Japan
• [学会発表] Group-IV Semiconductor Quantum Heterointegration by Low-Energy Plasma CVD Processing (2013)
  • 著者名/発表者名: M.Sakuraba and J.Murota
  • 学会等名: Symp. E12: ULSI Process Integration 8
  • 発表場所: San Francisco, USA (Abs. 224th Electrochem. Soc. Meeting, Abs.No.2226)
  • 招待講演
• [学会発表] Formation and Characterization of Strained Si_<1-x>Ge_x Films Epitaxially Grown on Si(100) by Low-Energy ECR Ar plasma CVD without Substrate Heating (2013)
  • 著者名/発表者名: N.Ueno, M.Sakuraba, J.Murota and S.Sato
  • 学会等名: Symp. E12: ULSI Process Integration 8
  • 発表場所: San Francisco, USA (Abs. 224th Electrochem. Soc. Meeting, Abs.No.2228)
• [学会発表] Epitaxial Growth of Heavily B-Doped Si and Ge Films on Si(100) by Low-Energy ECR Ar Plasma CVD without Substrate Heating (2013)
  • 著者名/発表者名: Y.Abe, S.Kubota, M.Sakuraba, J.Murota and S.Sato
  • 学会等名: Symp. E12: ULSI Process Integration 8
  • 発表場所: San Francisco, USA (Abs. 224th Electrochem. Soc. Meeting, Abs.No.2230)
• [学会発表] Epitaxial Growth of B-Doped Si on Si(100) by ECR Ar Plasma CVD in a SiH_4-B_2H_6-H_2 Gas Mixture without Substrate Heating (2013)
  • 著者名/発表者名: Y.Abe, M.Sakuraba and J.Murota
  • 学会等名: 8th Int. Conf. on Si Epitaxy and Heterostructures
  • 発表場所: Fukuoka, Japan (Abs.No.P1-4)
• [学会発表] Epitaxial Growth of Si_<1-x>Ge_x Alloy on Si(100) by ECR Ar Plasma CVD in a SiH_4-GeH_4 Gas Mixture without Substrate Heating (2013)
  • 著者名/発表者名: N.Ueno, M.Sakuraba, J.Murota and S.Sato
  • 学会等名: 8th Int. Conf. on Si Epitaxy and Heterostructures
  • 発表場所: Fukuoka, Japan (Abs.No.P1-8)
• [学会発表] Nitrogen Doping Effect upon Hole Tunneling Characteristics of Si Barriers in Si_<1-x>Ge_x/Si Resonant Tunneling Diode (2013)
  • 著者名/発表者名: T.Kawashima, M.Sakuraba and J.Murota
  • 学会等名: 8th Int. Conf. on Si Epitaxy and Heterostructures
  • 発表場所: Fukuoka, Japan (Abs.No.P1-27)
• [学会発表] Atomically Controlled Plasma CVD Processing for Quantum Heterointegration of Group IV Semiconductors (2013)
  • 著者名/発表者名: M.Sakuraba and J.Murota
  • 学会等名: 6th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
  • 発表場所: Tohoku Univ., Sendai, Japan (Abs.No.D-3)
  • 招待講演
• [学会発表] Tunneling Characteristics in Si_<1-x>Ge_x/Si Resonant Tunneling Diode (2013)
  • 著者名/発表者名: T.Kawashima, M.Sakuraba and J.Murota
  • 学会等名: 6th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
  • 発表場所: Tohoku Univ., Sendai, Japan (Abs.No.P-15)
• [学会発表] Epitaxial Growth of B-Doped Si on Si(100) by ECR Ar Plasma CVD from SiH_4-B_2H_6-H_2 Gas Mixture without Substrate Heating (2013)
  • 著者名/発表者名: Y.Abe, M.Sakuraba and J.Murota
  • 学会等名: 6th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
  • 発表場所: Tohoku Univ., Sendai, Japan (Abs.No.P-16)
• [学会発表] Epitaxial Growth of Si_<1-x>Ge_x on Si(100) by ECR Ar Plasma CVD from SiH_4-GeH_4 Gas Mixture without Substrate Heating (2013)
  • 著者名/発表者名: N.Ueno, M.Sakuraba, J.Murota and S.Sato
  • 学会等名: 6th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
  • 発表場所: Tohoku Univ., Sendai, Japan (Abs.No.P-17)
• [学会発表] Epitaxial Growth of B-Doped Ge on Si(100) by ECR Ar Plasma CVD from GeH_4-B_2H_6-H_2 Gas Mixture without Substrate Heating (2013)
  • 著者名/発表者名: S.Kubota, M.Sakuraba, J.Murota and S.Sato
  • 学会等名: 6th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
  • 発表場所: Tohoku Univ., Sendai, Japan (Abs.No.P-18)
• [学会発表] Epitaxial Growth of B-Doped Si on Si(100) by ECR Ar Plasma CVD in a SiH4-B2H6-H2 Gas Mixture without Substrate Heating (2013)
  • 著者名/発表者名: Y. Abe, M. Sakuraba and J. Murota
  • 学会等名: Abs. 8th Int. Conf. on Si Epitaxy and Heterostructures (ICSI-8) & 6th Int. Symp. Control of Semiconductor Interfaces (ISCSI-VI), Abs.No.P1-4.
  • 発表場所: Fukuoka, Japan
• [学会発表] Epitaxial Growth of Si1-xGex Alloy on Si(100) by ECR Ar Plasma CVD in a SiH4-GeH4 Gas Mixture without Substrate Heating (2013)
  • 著者名/発表者名: N. Ueno, M. Sakuraba, J. Murota and S. Sato
  • 学会等名: Abs. 8th Int. Conf. on Si Epitaxy and Heterostructures (ICSI-8) & 6th Int. Symp. Control of Semiconductor Interfaces (ISCSI-VI), Abs.No.P1-8.
  • 発表場所: Fukuoka, Japan
• [学会発表] Nitrogen Doping Effect upon Hole Tunneling Characteristics of Si Barriers in Si1-xGex/Si Resonant Tunneling Diode (2013)
  • 著者名/発表者名: T. Kawashima, M. Sakuraba and J. Murota
  • 学会等名: Abs. 8th Int. Conf. on Si Epitaxy and Heterostructures (ICSI-8) & 6th Int. Symp. Control of Semiconductor Interfaces (ISCSI-VI), Abs.No.P1-27.
  • 発表場所: Fukuoka, Japan
• [学会発表] Group-IV Semiconductor Quantum Heterointegration by Low-Energy Plasma CVD Processing (Invited Paper) (2013)
  • 著者名/発表者名: M. Sakuraba and J. Murota
  • 学会等名: Symp. E12: ULSI Process Integration 8 (ECS Trans., Vol.58, No.9, 2013), pp.195-200, Abs.No.2226.
  • 発表場所: San Francisco, USA
  • 招待講演
• [学会発表] Formation and Characterization of Strained Si1-xGex Films Epitaxially Grown on Si(100) by Low-Energy ECR Ar plasma CVD without Substrate Heating (2013)
  • 著者名/発表者名: N. Ueno, M. Sakuraba, J. Murota and S. Sato
  • 学会等名: Symp. E12: ULSI Process Integration 8 (ECS Trans., Vol.58, No.9, 2013), pp.207-211, Abs.No.2228.
  • 発表場所: San Francisco, USA
• [学会発表] Epitaxial Growth of Heavily B-Doped Si and Ge Films on Si(100) by Low-Energy ECR Ar Plasma CVD without Substrate Heating (2013)
  • 著者名/発表者名: Y. Abe, S. Kubota, M. Sakuraba, J. Murota and S. Sato
  • 学会等名: Symp. E12: ULSI Process Integration 8 (ECS Trans., Vol.58, No.9, 2013), pp.223-228, Abs.No.2230.
  • 発表場所: San Francisco, USA
• [学会発表] Epitaxial Growth of B-Doped Si on Si(100) by ECR Ar Plasma CVD from SiH4-B2H6-H2 Gas Mixture without Substrate Heating (2013)
  • 著者名/発表者名: Y. Abe, 他
  • 学会等名: 6th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
  • 発表場所: Sendai, Japan
• [学会発表] Epitaxial Growth of Si1-xGex on Si(100) by ECR Ar Plasma CVD from SiH4-GeH4 Gas Mixture without Substrate Heating (2013)
  • 著者名/発表者名: N. Ueno, 他
  • 学会等名: 6th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
  • 発表場所: Sendai, Japan
• [学会発表] Epitaxial Growth of B-Doped Ge on Si(100) by ECR Ar Plasma CVD from GeH4-B2H6-H2 Gas Mixture without Substrate Heating (2013)
  • 著者名/発表者名: S. Kubota, 他
  • 学会等名: 6th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
  • 発表場所: Sendai, Japan
• [学会発表] Atomically Controlled Plasma CVD Processing for Quantum Heterointegration of Group IV Semiconductors (2013)
  • 著者名/発表者名: M. Sakuraba, 他
  • 学会等名: 6th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
  • 発表場所: Sendai, Japan
  • 招待講演
• [学会発表] Epitaxial Growth of B-Doped Si on Si(100) by ECR Ar Plasma CVD in a SiH4-B2H6-H2 Gas Mixture without Substrate Heating (2013)
  • 著者名/発表者名: Y. Abe, 他
  • 学会等名: 8th Int. Conf. on Si Epitaxy and Heterostructures (ICSI-8) and 6th Int. Symp. on Control of Semiconductor Interfaces (ISCSI-VI)
  • 発表場所: Fukuoka, Japan
• [学会発表] Epitaxial Growth of Si1-xGex Alloy on Si(100) by ECR Ar Plasma CVD in a SiH4-GeH4 Gas Mixture without Substrate Heating (2013)
  • 著者名/発表者名: N. Ueno, 他
  • 学会等名: 8th Int. Conf. on Si Epitaxy and Heterostructures (ICSI-8) and 6th Int. Symp. on Control of Semiconductor Interfaces (ISCSI-VI)
  • 発表場所: Fukuoka, Japan
• [学会発表] Nitrogen Doping Effect upon Hole Tunneling Characteristics of Si Barriers in Si1-xGex/Si Resonant Tunneling Diode (2013)
  • 著者名/発表者名: T. Kawashima, 他
  • 学会等名: 8th Int. Conf. on Si Epitaxy and Heterostructures (ICSI-8) and 6th Int. Symp. on Control of Semiconductor Interfaces (ISCSI-VI)
  • 発表場所: Fukuoka, Japan
• [学会発表] Fabrication of Room-Temperature Resonant Tunneling Diode with Atomically Controlled Strained Si_<1-x>Ge_x/Si Quantum Heterostructure (2011)
  • 著者名/発表者名: M.Sakuraba and J.Murota
  • 学会等名: 4th French Research Organizations - Tohoku University Joint Workshop on Frontier Materials (Frontier 2011)
  • 発表場所: Sendai, Japan (p.35)
  • 招待講演
• [学会発表] Atomically Controlled Formation of Strained Si_<1-x>Ge_x/Si Quantum Heterostructure for Room- Temperature Resonant Tunneling Diode (2011)
  • 著者名/発表者名: M.Sakuraba and J.Murota
  • 学会等名: Symp. E9: ULSI Process Integration 7
  • 発表場所: Boston, USA (Abs. 220th Electrochem. Soc. Meeting, Abs.No.2147)
• [学会発表] Atomically Controlled Plasma Processing for Quantum Heterointegration of Group IV Semiconductors (2011)
  • 著者名/発表者名: M.Sakuraba and J.Murota
  • 学会等名: Symp. E9: ULSI Process Integration 7
  • 発表場所: Boston, USA (Abs. 220th Electrochem. Soc. Meeting, Abs.No.2152)
• [学会発表] Behavior of N Atoms after Thermal Nitridation of Si_<1-x>Ge_x Surface (2011)
  • 著者名/発表者名: T.Kawashima, M.Sakuraba, B.Tillack and J.Murota
  • 学会等名: 7th Int. Conf. on Si Epitaxy and Heterostructures (ICSI-7)
  • 発表場所: Leuven, Belgium (Abs.No.1171)
• [学会発表] Behavior of N Atoms after Thermal Nitridation of Si_<1-x>Ge_x Surface (2011)
  • 著者名/発表者名: T.Kawashima, 他
  • 学会等名: 7th Int.Conf.on Si Epitaxy and Heterostructures (ICSI-7)
  • 発表場所: Leuven, Belgium
• [学会発表] Atomically Controlled Formation of Strained Si_<1-x>Ge_x/Si Quantum Heterostructure for Room-Temperature Resonant Tunneling Diode (2011)
  • 著者名/発表者名: M.Sakuraba, J.Murota
  • 学会等名: Symp.E9 : ULSI Process Integration 7 (220th Meeting of the Electrochem.Soc.)
  • 発表場所: Boston, USA
• [学会発表] Atomically Controlled Plasma Processing for Quantum Heterointegration of Group IV Semiconductors (2011)
  • 著者名/発表者名: M.Sakuraba, J.Murota
  • 学会等名: Symp.E9 : ULSI Process Integration 7 (220th Meeting of the Electrochem.Soc.)
  • 発表場所: Boston, USA
• [学会発表] Fabrication of Room-Temperature Resonant Tunneling Diode with Atomically Controlled Strained Si_<1-x>Ge_x/Si Quantum Heterostructure (2011)
  • 著者名/発表者名: M.Sakuraba, J.Murota
  • 学会等名: 4th French Research Organizations-Tohoku University Joint Workshop on Frontier Materials (Frontier 2011)
  • 発表場所: Sendai, Japan(Invited Paper)