| 研究課題/領域番号 |
23K03941
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| 研究種目 |
基盤研究(C)
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| 配分区分 | 基金 |
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| 応募区分 | 一般 |
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| 審査区分 |
小区分21050:電気電子材料工学関連
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| 研究機関 | 豊橋技術科学大学 |
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研究代表者 |
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| 研究分担者 |
石川 靖彦 豊橋技術科学大学, 工学(系)研究科(研究院), 教授 (60303541)
山根 啓輔 豊橋技術科学大学, 工学(系)研究科(研究院), 准教授 (80610815)
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| 研究期間 (年度) |
2023-04-01 – 2026-03-31
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| 研究課題ステータス |
交付 (2023年度)
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| 配分額 *注記 |
4,550千円 (直接経費: 3,500千円、間接経費: 1,050千円)
2025年度: 1,820千円 (直接経費: 1,400千円、間接経費: 420千円)
2024年度: 1,430千円 (直接経費: 1,100千円、間接経費: 330千円)
2023年度: 1,300千円 (直接経費: 1,000千円、間接経費: 300千円)
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| キーワード | Nitride materials / Silicon Photonics / Nonlinear Optics / Reactive Sputtering / Group-IV Nitride / Nonlinear Material |
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| 研究開始時の研究の概要 |
Novel group-IV nitrides, “GeNx and SnNx”, are investigated, for the first time, as a potential second/third-order nonlinear optical device material in Si photonics toward on-chip optical intensity modulation and wavelength conversion.
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| 研究実績の概要 |
In the first part of the project, we focused on the fabrication of the germanium nitride samples by RF sputtering. By x-ray diffraction and scanning electron microscopy and ellipsometry we have characterized the samples and observed the influence of the Sputtering power in the crystallographic quality of the samples. Particularly we observed a poor incorporation of the Nitrogen atoms at larger power values compared with Aluminum Nitride and Silicon Nitride, in order to solve this problem, we have changed the deposition conditions including the sputtering power and the germanium nitrogen rate deposition. With this we successfully achieved Germanium Nitride samples for 100 watts power.
Preliminary results of the optical characterization related to the band gap energy look promising.
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| 現在までの達成度 (区分) |
現在までの達成度 (区分)
2: おおむね順調に進展している
理由
In this project we have faced some unexpected difficulties in the preparation of the Germanium Nitride samples. From previous experience the Aluminum Nitride and Silicon Nitride deposition conditions are more flexible than the ones for successful Germanium Nitride within our equipment. From this we required a larger number of experiments focused on the growth deposition of Germanium Nitride. The first year of the project was expected to focus in the Germanium Nitride deposition which is going right on schedule.
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| 今後の研究の推進方策 |
There are some depositions conditions that we are investigating in order to improve our results. We have studied low sputtering power conditions, but we are researching the lowest possible that the equipment is able to provide as the Argon Nitrogen rate.
The next part is the complete optical characterization which has already started.
For the last year of the research well continue with the etching procedure of the germanium nitride, considering similar material as aluminum nitride we had planned the etching conditions since there is not many information available for our material, and with this the fabrication of the optical ring resonator.
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