| 研究課題/領域番号 |
23K13270
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| 研究種目 |
若手研究
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| 配分区分 | 基金 |
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| 審査区分 |
小区分19020:熱工学関連
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| 研究機関 | 豊田工業大学 |
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研究代表者 |
ANG ArtoniKevinRoquero 豊田工業大学, 工学(系)研究科(研究院), ポストドクトラル研究員 (50975050)
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| 研究期間 (年度) |
2023-04-01 – 2025-03-31
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| 研究課題ステータス |
交付 (2023年度)
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| 配分額 *注記 |
1,820千円 (直接経費: 1,400千円、間接経費: 420千円)
2024年度: 520千円 (直接経費: 400千円、間接経費: 120千円)
2023年度: 1,300千円 (直接経費: 1,000千円、間接経費: 300千円)
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| キーワード | TEG devices / Thermoelectric materials / Thermoelectrics |
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| 研究開始時の研究の概要 |
In this research, monolithic thermoelectric generators (TEG) will be developed using state-of-the-art thermoelectric chalcogenide materials. Using high performance Ag- and Cu- chalcogenides, novel monolithic TEGs will be developed for energy harvesting applications.
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| 研究実績の概要 |
A mulitlayer monolithic thermoelectric generator (TEG) was developed using high performance n-type Ag2S0.55Se0.45 and p-type Cu2.075Se. Both have high powerfactors and low thermal conductivities at room temperature, ideal for TEG applications.
Using these TE materials, a dense and robust multilayer monolithic TEG was assembled using a low temperature co-sintering process. This resulted in a power output of 0.3 μW/cm2K2. By further minimizing electrical contact resistance, the power output was increased to 0.7 μW/cm2K2, and by optimizing the device structure, it was further increased to 1.5 μW/cm2K2.
This work shows an alternative approach to powering small IoT devices using inexpensive and non-toxic TE materials and a simple and low temperature device fabrication method.
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| 現在までの達成度 (区分) |
現在までの達成度 (区分)
2: おおむね順調に進展している
理由
Some of the initial goals of this project have already been met. The TE properties of the Ag- and Cu- chalcogenide materials have been improved, with zT~0.5 at room temperature.
Using these materials, the assembly method and device parameters of the multilayer monolithic thermoelectric generators (TEG) were optimized, resulting in a signifcant increase in the normalized power density output of the 3 pair prototype devices, from 0.3 μW/cm2K2 to ~1.5 μW/cm2K2. This was achieved without using the expensive and toxic Bi2Te3-based materials.
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| 今後の研究の推進方策 |
After enhancing the thermoelectric (TE) properties fo the chalcogenide materials used, optimizing the device device structural parameters and minimizing the electrical contact resistance, the best power output densitiy achieved in a single pair proptotype device in this work is ~1.5 μW/cm2K2. This is much lower than the record holding KELK Bi2Te3-based TEG (~18 μW/cm2K2). Furthermore, with only a single pair of n- and p-type layers, the voltage generated is also small, ~10 mV at a delta T of 30K.
To increase both these values, I am working on developing multilayer stacked devices with > 10 pairs of TE layers using thin sheets of the TE materials. Furthermore, work is ongoing in further enhancing the TE properties of the p-type Cu2Se material.
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