| 研究課題/領域番号 |
23K20955
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| 補助金の研究課題番号 |
21H01376 (2021-2023)
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| 研究種目 |
基盤研究(B)
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| 配分区分 | 基金 (2024)
補助金 (2021-2023) |
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| 応募区分 | 一般 |
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| 審査区分 |
小区分21050:電気電子材料工学関連
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| 研究機関 | 国立研究開発法人理化学研究所 |
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研究代表者 |
王 利 国立研究開発法人理化学研究所, 光量子工学研究センター, 研究員 (50804035)
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| 研究期間 (年度) |
2021-04-01 – 2025-03-31
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| 研究課題ステータス |
採択後辞退 (2024年度)
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| 配分額 *注記 |
15,470千円 (直接経費: 11,900千円、間接経費: 3,570千円)
2024年度: 4,160千円 (直接経費: 3,200千円、間接経費: 960千円)
2023年度: 4,160千円 (直接経費: 3,200千円、間接経費: 960千円)
2022年度: 2,470千円 (直接経費: 1,900千円、間接経費: 570千円)
2021年度: 4,680千円 (直接経費: 3,600千円、間接経費: 1,080千円)
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| キーワード | laser / GaN/AlGaN quantum wells / GaN QCLs / quantum cascade laser / terahertz / MBE epitaxy / semiconductor |
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| 研究開始時の研究の概要 |
3D real-time mapping is the core unit for the self-driving. Near-infrared (1-3um) is best light source for the LIDAR systems for such mappings. this proposal intends to propose quantum cascade laser design based on GaN/AlN quantum wells to realize this wavelength. Lasing with mW-level is expected.
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| 研究実績の概要 |
1.the feasible QCLs design with improved robustness on strain relaxation is predicted by using nonequilibrium green’s function (NEGF) models. We update our models by including the strain relaxation parameters along the quantum wells epitaxy directions, and also the threading dislocation defects scattering is also developed to convince the prediction; 2. By growing um-thick GaN/AlGaN cascade quantum wells, we confirm the current-bias characteristic consistently with the calculation of NEGF models. We also observe the intersubband electroluminescence at targeted frequency. This results confidences the next step for laser; 3. The laser cavity structures processing has been ongoing.
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| 現在までの達成度 (区分) |
現在までの達成度 (区分)
2: おおむね順調に進展している
理由
(1) we predict the designs relying on more convince considering on the quantum transports; This can guide us to develop more novel QCL designs; (2)The electrical pumping is successfully carried out in cascading GaN/AlN quantum wells structure, and the observation of intersubband electroluminescence confirms the feasibility of intersuband transition lasing in GaN materials.
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| 今後の研究の推進方策 |
(1) to approach the lasing, FP cavity structure is used. The facet planes are challenging for GaN. We will develop the processing to realize the parallel mirror flat facets.
(2) at present, the main GaN/AlGaN epitaxy is based on polar plane directions, c-plane. Meanwhile, in views of the robustness of device realization, the nonpolar quantum wells structures will be more attractive. We will step into the development of GaN/AlGaN epitaxy on semi- or non-polar planes.
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