| 研究課題/領域番号 |
23K26054
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| 補助金の研究課題番号 |
23H01359 (2023)
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| 研究種目 |
基盤研究(B)
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| 配分区分 | 基金 (2024)
補助金 (2023) |
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| 応募区分 | 一般 |
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| 審査区分 |
小区分19020:熱工学関連
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| 研究機関 | 国立研究開発法人物質・材料研究機構 |
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研究代表者 |
SANG Liwen 国立研究開発法人物質・材料研究機構, ナノアーキテクトニクス材料研究センター, 主幹研究員 (90598038)
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| 研究分担者 |
角谷 正友 国立研究開発法人物質・材料研究機構, 電子・光機能材料研究センター, 主席研究員 (20293607)
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| 研究期間 (年度) |
2023-04-01 – 2027-03-31
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| 研究課題ステータス |
交付 (2024年度)
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| 配分額 *注記 |
17,420千円 (直接経費: 13,400千円、間接経費: 4,020千円)
2026年度: 2,600千円 (直接経費: 2,000千円、間接経費: 600千円)
2025年度: 3,770千円 (直接経費: 2,900千円、間接経費: 870千円)
2024年度: 4,290千円 (直接経費: 3,300千円、間接経費: 990千円)
2023年度: 6,760千円 (直接経費: 5,200千円、間接経費: 1,560千円)
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| キーワード | 熱輸送 / GaN / superlattices / thermal dissipation / thermal management / phonon |
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| 研究開始時の研究の概要 |
The control of the heat conduction through manipulation of phonons has not been exploited in the wide-band gap semiconductors. The purpose of this research is to achieve the effective thermal dissipation in GaN high-power and RF devices by using superlattices phononic crystals.
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| 研究実績の概要 |
The thermal phonon transportation in superlattices has been investigated. Using metal organic chemical vapor deposition, high-quality InGaN/GaN superlattices, AlGaN/GaN superlattices are prepared. The interface is very sharp into nanometer level by transmission electron microscopy. By changing period thickness in superlattics, the crossover from incoherent to coherent phonon transport were determined. It is found that, when the period thickness is lower than phonon mean free path, coherent phonon transport was achieved. The thickness is also influenced by the quality, such as dislocations in superlattices. At the high-density interface, the coherence starts to be disturbed due to larger strain and degraded interface morphology. Moreover, highly orientated polycrystalline diamond film was deposited on GaN template by micro-plasma chemical vapor deposition.The diamond film has a thermal conductivity approaching 250W/mK when the thickness is ~1 um, belonging to the high level for polycrystalline diamond film. The optimized superlattices were introduced as interlayer between GaN and diamond as the thermal dissipation solution. The thermal boundary resistance was achieved as low as 4m2K/GW, which is much lower than those with SiNx of AlN interlayers.
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| 現在までの達成度 (区分) |
現在までの達成度 (区分)
1: 当初の計画以上に進展している
理由
The crossover from incoherent to coherent transport in GaN-based superlattices was determined. This will be helpful for the future device design.
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| 今後の研究の推進方策 |
We will further optimize the interface of superlattices by MOCVD, to reduce the interface defects in InAlN/GaN and AlGaN/AlN superlattices. The measurement and analysis of the thermal property across interface will be necessary. Furthermore, theoretical calculation on phonon transport is also important
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