| 研究課題/領域番号 |
23KJ1239
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| 研究種目 |
特別研究員奨励費
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| 配分区分 | 基金 |
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| 応募区分 | 国内 |
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| 審査区分 |
小区分29020:薄膜および表面界面物性関連
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| 研究機関 | 京都大学 |
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研究代表者 |
SHEN YUFAN 京都大学, 理学研究科, 特別研究員(DC2)
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| 研究期間 (年度) |
2023-04-25 – 2025-03-31
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| 研究課題ステータス |
交付 (2023年度)
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| 配分額 *注記 |
2,000千円 (直接経費: 2,000千円)
2024年度: 1,000千円 (直接経費: 1,000千円)
2023年度: 1,000千円 (直接経費: 1,000千円)
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| キーワード | Ferroelectricity / Freestanding Membranes / Hafnia |
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| 研究開始時の研究の概要 |
Under this project, I will develop next-generation stackable electronic devices, which are multifunctional and impossible to fabricate in the past. Benefiting from such new devices, both practical application and scientific research in electronics or spintronics can be greatly promoted.
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| 研究実績の概要 |
My project is to fabricate ferroelectric oxide freestanding membranes and integrate them into limit-free multiferroic electronic devices, realizing electrical performance controlled by electrical and magnetic fields.
During this project year, I stabilized ferroelectric hafnia thin films epitaxially by using pulse laser deposition, the mechanism of which is also clarified.
Furthermore, I exfoliated the ultrathin hafnia membranes down to 1 nm and confirmed the survival of ferroelectricity in this atomically thin oxide membrane, verifying the scale-free ferroelectricity in hafnia. The related work is under review currently and this work validates the possible limit-free multiferroic electronic devices based on these ultrathin membranes.
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| 現在までの達成度 (区分) |
現在までの達成度 (区分)
2: おおむね順調に進展している
理由
The research aim for the first project year is to develop damage-free exfoliation method for fabricating freestanding membranes and characterize their ferroelectricity. During the past one year, I have accomplished my project goal for the first year.
During the past year, after stabilizing the hafnia epitaxial thin films, I developed a method to exfoliate them from the substrate without largely deteriorating the hafnia's crystallinity. Using this method, an almost single-crystal hafnia freestanding membrane down to the atomic thickness (1-nm-thick) was fabricated, with switchable ferroelectric polarization at room temperature being confirmed.
These ultrathin thin ferroelectric hafnia membranes can be used for fabricaitng limit-free multiferroelectric devices in the next project year.
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| 今後の研究の推進方策 |
During the last project year, I will proceed to stack these freestanding ferroelectric ultrathin hafnia membranes with the perpendicularly magnetized thin films to fabricate the multiferroic electronic devices, and tailor the electrical performance of the devices by using both electrical and magnetic fields.
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