| 配分額 *注記 |
4,680千円 (直接経費: 3,600千円、間接経費: 1,080千円)
2025年度: 2,080千円 (直接経費: 1,600千円、間接経費: 480千円)
2024年度: 2,600千円 (直接経費: 2,000千円、間接経費: 600千円)
|
|---|
| 研究開始時の研究の概要 |
InOx-based oxide semiconductor materials are very promising for wide-range of electronic applications, especially on panel and transistor devices for advanced smartphone. To realize the high-performance InOx-based devices, the intrinsic properties of oxide thin-film should be well-controlled. In this research, the strategies of surface passivation and annealing for realizing high-performance and stable oxide thin-film are investigated.
|
