| 研究開始時の研究の概要 |
We aim to observe a large tunnel magnetoresistance (TMR) in magnetic tunnel junctions (MTJs) based on the topological antiferromagnet Mn3Sn, towards the realization of ultra-fast, low-power, non-volatile magnetoresistive memory. To achieve this, we will optimize the growth conditions for the magnetic electrode layers and barrier layers.
|
