光熱変換技術を用いた結晶成長方向に組成の異なる半導体薄膜の光吸収スペクトル測定

• 研究課題/領域番号: 25390082
• 研究種目: 基盤研究(C)
• 配分区分: 基金
• 応募区分: 一般
• 研究分野: 薄膜・表面界面物性
• 研究機関: 宮崎大学
• 研究代表者: 碇 哲雄 宮崎大学, 工学部, 研究員 (70113214)
• 研究期間 (年度): 2013-04-01 – 2016-03-31
• 研究課題ステータス: 完了 (2015年度)
• 配分額: 5,070千円 (直接経費: 3,900千円、間接経費: 1,170千円); 2015年度: 1,170千円 (直接経費: 900千円、間接経費: 270千円); 2014年度: 1,690千円 (直接経費: 1,300千円、間接経費: 390千円); 2013年度: 2,210千円 (直接経費: 1,700千円、間接経費: 510千円)
• キーワード: 半導体光物性 / 薄膜結晶成長 / 無発光電子再結合 / 量子構造半導体 / カルコパイライト太陽電池 / 組成変調構造 / 光熱変換分光法 / フォトルミネセンス / 光学物性

研究成果の概要

新規実験手法である高感度光熱変換分光法を用いて光励起キャリアの非発光緩和過程を実験的に調べ、結晶成長方向（膜厚方向）に組成（エネルギーギャップ）が変化する半導体薄膜の光吸収スペクトルを測定した。そして、厚さ方向に変化する物性パラメーターが吸収スペクトルに及ぼす影響を調べた。実験ではバッファー層の異なるカルコパイライト型太陽電池構造試料を主に用いた。その結果、得られた実験結果が、バッファー層と薄膜の界面付近の組成変動によるモデルでは説明できず、むしろ界面を通して拡散し膜内で活性化した不純物の影響によるものであることが分かった。

研究成果

• [雑誌論文] Control of hydrogen and carbon impurity inclusion during the growth of GaAsN thin film by atomic layer epitaxy (2016)
  • 著者名/発表者名: Yokoyama, Y. Fukuyama, A., Haraguchi, T., Yamauchi, T., Ikari, T., and Suzuki, H.
  • 雑誌名: Japanese Journal of Applied Physics 巻: 55 号: 1S ページ: 01AC06-01AC06
  • DOI: 10.7567/jjap.55.01ac06
  • NAID: 210000145954
  • 査読あり / 謝辞記載あり
• [雑誌論文] Effect of preheating time on uniformity of electrodeposited Cu2ZnSnS4 thin films studied by carrier lifetime and photoluminescence measurements (2015)
  • 著者名/発表者名: Hamada, T., Fukuyama, A., Jiang, F., Ikeda, S., and Ikari, T
  • 雑誌名: Physica Status Solidi (C) 巻: 12 号: 6 ページ: 725-728
  • DOI: 10.1002/pssc.201400283
  • 査読あり / 謝辞記載あり
• [雑誌論文] Photoluminescence of Valence-Changed Samarium Ions in Sintered BaSO4 Induced by X-ray Radiation (2015)
  • 著者名/発表者名: Maeda, K., Kumeda, T., Arimura, K., Sakai, K., and Ikari, T.
  • 雑誌名: Journal of Physics: Conference Series 巻: 619 ページ: 012040-012040
  • DOI: 10.1088/1742-6596/619/1/012040
  • 査読あり
• [雑誌論文] X-ray Induced Luminescence Spectroscopy of Samarium Doped Barium Sulfate Prepared by Sintering Method (2015)
  • 著者名/発表者名: Kumeda, T., Maeda, K., Shirano, Y., Fujiwara, K., Sakai, K., and Ikari, T.
  • 雑誌名: Journal of Physics: Conference Series 巻: 619 ページ: 012038-012038
  • DOI: 10.1088/1742-6596/619/1/012038
  • 査読あり
• [雑誌論文] Zinc-blende and wurtzite phase separation in catalyst-free molecular beam epitaxy vapor-liquid-solid-grown Si-doped GaAs nanowires on a Si(111) substrate induced by Si doping (2015)
  • 著者名/発表者名: Suzuki, A., Fukuyama, A., Suzuki, H., Sakai, K., Paek, J.-H., Yamaguchi, M., and Ikari, T.
  • 雑誌名: Japanese Journal of Applied Physics 巻: 54 号: 3 ページ: 035001-035001
  • DOI: 10.7567/jjap.54.035001
  • NAID: 210000144860
  • 査読あり / 謝辞記載あり
• [雑誌論文] Effect of number of stack on the thermal escape and non-radiative and radiative recombinations of photoexcited carriers in strain-balanced InGaAs/GaAsP multiple quantum-well-inserted solar cells (2014)
  • 著者名/発表者名: Aihara, T., Fukuyama, A., Suzuki, H., Fujii, H., Sugiyama, M., Nakano, Y., Ikari, T.
  • 雑誌名: Journal of Applied Physics 巻: 117 号: 8 ページ: 084307-084307
  • DOI: 10.1063/1.4913593
  • 査読あり / 謝辞記載あり
• [雑誌論文] Detection of miniband formation in strain-balanced InGaAs/GaAsP quantum well solar cells by using a piezoelectric photothermal spectroscopy (2014)
  • 著者名/発表者名: Aihara, T., Fukuyama, A., Yokoyama, Y., Kojima, M., Suzuki, H., Sugiyama, M., Nakano, Y., Ikari, T.
  • 雑誌名: Journal of Applied Physics 巻: 116 号: 4 ページ: 044509-044509
  • DOI: 10.1063/1.4887443
  • 査読あり / 謝辞記載あり
• [雑誌論文] Effect of internal electric field on non-radiative carrier recombination in the strain-balanced InGaAs/GaAsP multiple quantum well solar cells (2014)
  • 著者名/発表者名: Fukuyama, A., Aihara, T., Yokoyama, Y., Kojima, M., Fujii, H., Suzuki, H., Sugiyama, M., Nakano, Y., Ikari, T.
  • 雑誌名: Physica Status Solidi (A) 巻: 211 号: 2 ページ: 444-448
  • DOI: 10.1002/pssa.201300390
  • 査読あり / 謝辞記載あり
• [雑誌論文] Effect of interatomic distance of constituent nitrogen atoms on its localized electronic state in dilute GaAsN thin films investigated by a photoreflectance spectroscopy (2014)
  • 著者名/発表者名: Ding, W., Fukuyama, A., Morioka, G., Suzuki, A., Suzuki, H., Yamaguchi, M., Ikari, T.
  • 雑誌名: Energy Procedia 巻: 60 ページ: 63-70
  • DOI: 10.1016/j.egypro.2014.12.343
  • 査読あり
• [雑誌論文] Optical properties of Be-doped GaAs nanowires on Si substrate grown by a catalyst-free molecular beam epitaxy vapor-liquid-solid method (2014)
  • 著者名/発表者名: Suzuki, A., Fukuyama, A., Suzuki, H., Sakai, K., Paek, J.-H., Yamaguchi, M., Ikari, T.
  • 雑誌名: Japanese Journal of Applied Physics 巻: 53 号: 5S1 ページ: 05FV03-05FV03
  • DOI: 10.7567/jjap.53.05fv03
  • NAID: 210000143900
  • 査読あり / 謝辞記載あり
• [雑誌論文] Low-temperature photoluminescence of Sb-doped ZnO nanowires synthesized on Sb-coated Si substrate by chemical vapor deposition method (2014)
  • 著者名/発表者名: Sakai, K., Ishikura, K., Fukuyama, A., Palani, I.A., Ramachandra Rao, M.S., Okada, T., Ikari, T.
  • 雑誌名: Springer Series in Materials Science 巻: 180 ページ: 331-339
  • DOI: 10.1007/978-81-322-1160-0_16
  • ISBN: 9788132211594, 9788132211600
  • 査読あり
• [雑誌論文] Effect of oxygen pressure on photoluminescence spectra and hall coefficients of Li-Ni Co-Doped ZnO films grown by a pulsed laser deposition (2014)
  • 著者名/発表者名: Sakai, K. , Ishikur, K., Ohori, D., Nakamura, D., Fukuyama, A., Okada, T., Ramachandra Rao, M.S., Ikari, T.
  • 雑誌名: Springer Series in Materials Science 巻: 180 ページ: 91-99
  • DOI: 10.1007/978-81-322-1160-0_4
  • ISBN: 9788132211594, 9788132211600
  • 査読あり
• [雑誌論文] Misfit dislocation anisotropies in the InGaAs/GaAs(001) interface measured using X-ray topography and reciprocal space mapping (2014)
  • 著者名/発表者名: Suzuki, H., Matsushita, T., Katayama, M., Maeda, K., Ikari, T.
  • 雑誌名: Japanese Journal of Applied Physics 巻: 53 号: 1 ページ: 018001-018001
  • DOI: 10.7567/jjap.53.018001
  • NAID: 210000143251
  • 査読あり
• [雑誌論文] Effects of nitrogen precursor on the Au-assisted vapor-liquid-solid growth of GaAs(N) nanostructures (2014)
  • 著者名/発表者名: Suzuki, H., Sakai, K., Haraguchi, T., Yamauchi, T., Hijii, M., Maeda, K., Ikari, T.
  • 雑誌名: Journal of Crystal Growth 巻: 386 ページ: 100-106
  • DOI: 10.1016/j.jcrysgro.2013.09.044
• [雑誌論文] Nitrogen-induced localized level observed by photoreflectance in GaAsN thin films grown by chemical beam epitaxy (2013)
  • 著者名/発表者名: H. Suzuki, A. Suzuki, A. Fukuyama, and T. Ikari
  • 雑誌名: Journal of Crystal Growth 巻: 384 ページ: 5-5
  • DOI: 10.1016/j.jcrysgro.2013.08.034
  • 査読あり
• [雑誌論文] Reduction of rotational twin formation by indium pre-evaporation in epitaxially grown GaAs films on Si (111) substrate (2013)
  • 著者名/発表者名: H. Suzuki, D. Ito, A. Fukuyama, and T. Ikari
  • 雑誌名: Journal of Crystal Growth 巻: 380 ページ: 148-148
  • DOI: 10.1016/j.jcrysgro.2013.06.015
  • 査読あり
• [雑誌論文] Effects of gas-flow sequences on the self-limiting mechanisms of GaAsN films grown by atomic layer epitaxy (2013)
  • 著者名/発表者名: H. Suzuki, H. Sadato, T. Haraguchi, T. Yamauchi, M. Ozeki, and T. Ikari
  • 雑誌名: Thin Solid Films 巻: 540 ページ: 79-79
  • DOI: 10.1016/j.tsf.2013.06.018
  • 査読あり
• [雑誌論文] Acceptor levels due to a complex including the nitrogen-hydrogen bond in GaAsN films grown by chemical beam epitaxy (2013)
  • 著者名/発表者名: H. Suzuki, A. Fukuyama, and T. Ikari
  • 雑誌名: Japanese Journal of Applied Physics 巻: 52 号: 5R ページ: 51001-51001
  • DOI: 10.7567/jjap.52.051001
  • NAID: 40019650868
  • 査読あり
• [学会発表] Formation of Wurtzite Phase by Si Doping and its Effect on the Optical Properties of GaAs Nanowires grown on Si Substrates by a Catalyst-free MBE-VLS Technique (2015)
  • 著者名/発表者名: M. Nakano, K. Sugihara, D. Ohori, K. Sakai, H. Amano, Y. Honda, T. Ikari, and A. Fukuyama,
  • 学会等名: AVS 62nd International Symposium
  • 発表場所: San Jose, CA
  • 年月日: 2015-10-18
  • 国際学会
• [学会発表] Effect of Internal Electric Field on the Miniband (2015)
  • 著者名/発表者名: T. Nakamura, K. Matsuochi, T. Murakami, H. Suzuki, K. Toprasertpong, M. Sugiyama, Y. Nakano, T. Ikari, and A. Fukuyama
  • 学会等名: AVS 62nd International Symposium
  • 発表場所: San Jose, CA
  • 年月日: 2015-10-18
  • 国際学会
• [学会発表] Light emission from GaAs/AlGaAs nanopillars fabricated by neutral beam etching and bio-template (2015)
  • 著者名/発表者名: D. Ohori, A. Suzuki, C. Thomas, A. Higo, S. Samukawa, A. Fukuyama, and T. Ikari
  • 学会等名: EMRS Spring Meeting
  • 発表場所: Lille, France
  • 年月日: 2015-05-11
  • 国際学会
• [学会発表] Photoluminescence study of quantum levels in GaAs/AlGaAs quantum nanodisks fabricated by bio-template and neutral beam etching (2015)
  • 著者名/発表者名: A. Fukuyama, D, Ohori, A. Suzuki, C. Thomas, A. Higo, S. Samukawa, and T. Ikari
  • 学会等名: EMRS Spring Meeting
  • 発表場所: Lille, France
  • 年月日: 2015-05-11
  • 国際学会
• [学会発表] Effect of iodine treatment on residual Na contents and induced crystal strains in guest-free Si clathrate thin films (2015)
  • 著者名/発表者名: H. Takeshita, K. Sakai, T. Haraguchi, H. Suzuki, F. Ohashi, T. Kume, A. Fukuyama, S. Nonomura, and T. Ikari
  • 学会等名: EMRS Spring Meeting
  • 発表場所: Lille, France
  • 年月日: 2015-05-11
  • 国際学会
• [学会発表] Stack Numbers Dependence of the Activation Energies for Carrier Escape from and Recombination in Strain-Balanced InGaAs/GaAsP MQW (2014)
  • 著者名/発表者名: A. Fukuyama, T. Ikari, K. Nishioka, T. Aihara, H. Suzuki, H. Fujii, M. Sugiyama, and Y. Nakano
  • 学会等名: 61th American Vacuum Society International Symposium
  • 発表場所: Baltimore, USA
  • 年月日: 2014-11-10 – 2014-11-14
• [学会発表] Mini-band Formation in a Strain-balanced InGaAs/GaAsP MQW Solar Cell Structure Investigated by a Photoreflectance and a Surface Photovoltage Spectroscopy (2014)
  • 著者名/発表者名: T. Ikari, A. Fukuyama, K. Nishioka, T. Aihara, H. Kuradome, K. Toprasertpong, Masakazu Sugiyama, Y. Nakano
  • 学会等名: 61th American Vacuum Society International Symposium
  • 発表場所: Baltimore, USA
  • 年月日: 2014-11-10 – 2014-11-14
• [学会発表] Activation energies for carrier non-radiative recombination in strain-balanced InGaAs/GaAsP MQW solar cell structures (2014)
  • 著者名/発表者名: H. Kuradome, T. Ikari, A. Fukuyama, K. Nishioka, T. Aihara, H. Suzuki, H. Fujii, M. Sugiyama, and Y.Nakano
  • 学会等名: IEEE Nanotechnology Materials and Devices Conference
  • 発表場所: ACI CASTELLO, ITALY
  • 年月日: 2014-10-12 – 2014-10-15
• [学会発表] Mini-band width estimation for a strain-balanced InGaAs/GaAsP quantum-well solar cells by a photoreflectance and surface photovoltage spectroscopies (2014)
  • 著者名/発表者名: T. Aihara, A. Fukuyama, T. Murakami, H. Kuradome, K. Nishioka, H. Suzuki, T. Ikari, K. Toprasertpong, M. Sugiyama, and Y. Nakano
  • 学会等名: IEEE Nanotechnology Materials and Devices Conference
  • 発表場所: ACI CASTELLO, ITALY
  • 年月日: 2014-10-12 – 2014-10-15
• [学会発表] Optical Investigation of the Effect of Mini-band Formation on the Carrier Collection Mechanism in a Strain-balanced InGaAs/GaAsP MQW Solar Cell Structure (2014)
  • 著者名/発表者名: T. Ikari, T. Aihara, M. Sugiyama, Y. Nakano, A. Fukuyama,
  • 学会等名: 2014 International conference on Flow Dynamics ( ICFD)
  • 発表場所: Sendai International Center, Sendai, Miyagi, Japan
  • 年月日: 2014-10-08 – 2014-10-10
  • 招待講演
• [学会発表] Photoluminescence of Ge Nanodisk Array Structure Fabricated by Bio-template and Neutral Beam Etching (2014)
  • 著者名/発表者名: D. Ohori, Y. Murayama, K. Kondo, F. Takuya, T. Okada, S. Samukawa, A. Fukuyama, T. Ikari
  • 学会等名: 2014 International conference on Flow Dynamics ( ICFD)
  • 発表場所: Sendai International Center, Sendai, Miyagi, Japan
  • 年月日: 2014-10-08 – 2014-10-10
• [学会発表] Silicon clathrate fabricated as a new photovoltaic material (2014)
  • 著者名/発表者名: T. Kume, F. Ohashi, T. Ban, K. Sakai, H. Suzuki, A. Fukuyama, T. Ikari, and S. Nonomura
  • 学会等名: EMRS 2014 Spring Meeting
  • 発表場所: Lille, France
  • 年月日: 2014-05-26 – 2014-05-29
• [学会発表] Photothermal and photoluminescence spectra of Cu(InGa)Se2 with CdS and ZnS buffer layers -- Effect of buffer layer formation on the absorption edges (2014)
  • 著者名/発表者名: T. Hamada, H. Hisamatsu, N. Naghavi, J. F. Guillemoles, D. Lincot, K. Sakai, A. Fukuyama, and T. Ikari
  • 学会等名: EMRS 2014 Spring Meeting
  • 発表場所: Lille, France
  • 年月日: 2014-05-26 – 2014-05-29
• [学会発表] Growth of GaAs nanowires on the selective areas of patterned Si (001) substrate (2014)
  • 著者名/発表者名: H. Suzuki, D. Kodera, A. Haga, I. Harada, A. Fukuyama, T. Ikari, and Y. Ohshita
  • 学会等名: EMRS 2014 Spring Meeting
  • 発表場所: Lille, France
  • 年月日: 2014-05-26 – 2014-05-29
• [学会発表] Epitaxial growth of guest-free Si clathrate film on Si substrate for new solar cell device structure application (2014)
  • 著者名/発表者名: K. Sakai, T. Haraguchi, F. Ohashi, T. Kume, H. Suzuki, A. Fukuyama, S. Nonomura, and T. Ikari
  • 学会等名: EMRS 2014 Spring Meeting
  • 発表場所: Lille, France
  • 年月日: 2014-05-26 – 2014-05-29
• [学会発表] Effect of the miniband formation on the carrier lifetime in silicon nanodisk array structure fabricated by using bio-templates and neutral beam etching techniques (2014)
  • 著者名/発表者名: D. Ohori, Y. Murayama, K. Kondo, M. M. Rahman, M. E. Syazwan, T. Okada, S. Samukawa, A. Fukuyama, and T. Ikari
  • 学会等名: EMRS 2014 Spring Meeting
  • 発表場所: Lille, France
  • 年月日: 2014-05-26 – 2014-05-29
• [学会発表] Photothermal and photoluminescence spectra of Cu(InGa)Se2 with CdS and ZnS buffer layers -- Effect of buffer layer formation on the absorption edges (2013)
  • 著者名/発表者名: T. Hamada, H. Hisamatsu, N. Naghavi, J. F. Guillemoles, D. Lincot, K. Sakai, A. Fukuyama, and T. Ikari
  • 学会等名: EMRS (European Materials Research Society Symposium)
  • 発表場所: Strasbourg, France
• [学会発表] Exciton lifetime and Stark Ladder Transition in InGaAs/GaAsP Strain-Balanced Superlattice Solar Cells (2013)
  • 著者名/発表者名: Y. Yokoyama, M. Kojima, T. Aihara, H. Suzuki, A. Fukuyama, H. Fujii, M. Sugiyama, Y. Nakano, and T. Ikari
  • 学会等名: EMRS (European Materials Research Society Symposium)
  • 発表場所: Strasbourg, France
• [学会発表] Effect of internal electric field on Non-Radiative Carrier Recombination in the Strain-Balanced InGaAs/GaAsP Multiple Quantum Well Solar Cells (2013)
  • 著者名/発表者名: T. Aihara, M. Kojima, Y. Yokoyama, H. Suzuki, A. Fukuyama, Y. Wang, 4 M. Sugiyama, Y.Nakano and T. Ikari
  • 学会等名: EMRS (European Materials Research Society Symposium)
  • 発表場所: Strasbourg, France
• [学会発表] Non-radiative carrier recombination rate in multiple quantum well solar cells determined by using a photothermal and a surface photovoltage spectroscopies (2013)
  • 著者名/発表者名: T. Ikari, A. Fukuyama, T. Aihara, M. Kojima, M. Sugiyama, and Y. Nakano
  • 学会等名: EU-PVSEC (European Photovoltaic conference)
  • 発表場所: Paris, France
• [学会発表] Bandgap Gradient of Cu(In,Ga)Se2 Solar Cell Investigated by a Photothermal and a Photoluminescence Spectroscopies (2013)
  • 著者名/発表者名: A.Fukuyama, T. Ikari, H. Hisamatsu and S. Yamaguchi, T. Yamaguchi
  • 学会等名: EU-PVSEC (European Photovoltaic conference)
  • 発表場所: Paris, France
• [学会発表] Effects of N precursor duration on opt-electrical properties of GaAsN films grown by atomic layer epitaxy (2013)
  • 著者名/発表者名: H. Suzuki, W. Ding, T. Yamaguchi, T. Haraguchi, S. Goto, Y. Yokoyama, K. Maeda, A. Fukuyama, and T. Ikari
  • 学会等名: 23th Photovoltaic Science and Engineering Conference (PVSEC-23)
  • 発表場所: Taipei, Taiwan
• [学会発表] Estimation of miniband in InGaAs/GaAsP strain-balanced sperlattice solar cell by using piezoelectric photothermal technique (2013)
  • 著者名/発表者名: Y. Yokoyama, M. Kojima, T. Aihara, Y. Wang, A. Fukuyama, M. Sugiyama, Y. Nakano, and T. Ikari
  • 学会等名: 9th International Conf. on Concentrating Photovoltaic Systems (CPV-9)
  • 発表場所: Miyazaki, Japan
• [学会発表] Effects of gas flow sequence on self-limiting mechanisms of GaAsN grown by atomic layer epitaxy (2013)
  • 著者名/発表者名: A. Haga, H. Sadato, T. Haraguchi, H. Suzuki, A. Fukuyama, M. Ozeki, and T. Ikari,
  • 学会等名: 9th International Conf. on Concentrating Photovoltaic Systems (CPV-9)
  • 発表場所: Miyazaki, Japan
• [図書] 4.薄膜シリコン系太陽電池の最新技術 (普及版) (2015)
  • 著者名/発表者名: 碇 哲雄、福山敦彦
  • 総ページ数: 271
  • 出版者: シーエムシー出版
• [備考] 研究者ホームページ
  • URL: http://www.cc.miyazaki-u.ac.jp/mdeee03/ikari/IK_main01.htm