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[文献書誌] T.Hara and A.Suga: "Damage Formed by Electron Cyclotron Resonance Plasma Etching on a Gallium Arsenide Surface" J.Appl.Phys.67. 2836-2839 (1990)
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[文献書誌] T.Hara and M.Murota: "Interfacial Reaction of Ta and Si Rich Tantalum Silicides with Si Substrate" J.Appl.Phys.68. 183-188 (1990)
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[文献書誌] T.Hara,T.Miyamoto: "Composition of Tungsten Silicide Films Deposited by Dichlorosilane Reduction of Tungsten Hexafluoride" J.Electrochem.Soc.137. 2955-2959 (1990)
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[文献書誌] T.Hara,K.Tani,K.Inoue,: "Formation of Titanium Nitride Layers by the Nitridation of Titanium,in High Pressure Ammonium Ambient" Appl.Phys.Lett,. 57. 1660-1662 (1990)
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[文献書誌] T.Hara,H.Hagiwara,: "Monitoring of LowーDose Ion Implantation in Silicon" IEEE Electron Device Letts.11. 485-486 (1990)
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[文献書誌] H.Suzuki and T.Hara: "Plasma Damage Induced on Silicon Surface in a Barrel Asher" J.Electrochem.Soc.138. 542-544 (1991)
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[文献書誌] T.Hara,H.Hagiwara,Smith,C.Welles,: "Monitoring of Dose in Low Dose Ion Implantation" Nuclear Instruments and Methods in Physics Research,. B42. (1991)
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[文献書誌] T.Hara,T.Miyamoto: "In Situ Stress Measurement of Tungsten Silicide" Appl.Phys.Lett.58. (1991)
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[文献書誌] T.Hara,A.Yamanoue,: "Properties of Titanium Nitride Films for Barrier Metal in Aluminum Ohmic Contact Systems" Japan J.Appl.Phys.30. (1991)
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[文献書誌] T.Hara,and J.Hiyoshi: "Damage Formed by Electron Cyclotron Resonance Plasma Etching on Silicon Surface" Japan J.Appl.,Phys.30. (1991)
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[文献書誌] T.Hara,and R.Ichikawa: "Dose and Damage Measurements in Low Dose Ion Implantation in Silicon by PhotoーAcoustic Displacement and" Japan J.Appl.,Phys.30. (1991)
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[文献書誌] T.Hara,K.Inoue,: "Formation of Titanium Nitride/Titanium Silicide/Silicon by High Pressure Nitridation of Titanium/" J of Applied.Phys.69. (1991)