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[文献書誌] S.K.Park, J.Tatebavashi, Y.Arakawa: "Effects of InGaAs Insertion Layer on the Properties of High-Density InAs/AlAs Quantum Dots"Jpn.J.Appl.Phys.. (publishing). (2004)
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[文献書誌] S.K.Park, J.Tatebayashi, T.Nakaoka, T.Sato, Y.J.Park, Y.Arakawa: "Enhanced Optical Properties of High Density (>10^<11>/cm^2) InAs/AlAs Quantum Dots by Using Hydrogen Passivation"Jpn.J.Appl.Phys.. (publishing). (2004)
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[文献書誌] S.K.Park, J.Tatebayashi, Y.Arakawa: "Formation of ultra high-density InAs/AlAs quantum dots by metalorganic chemical vapor deposition"Appl.Phys.Lett.. 84. 1877-1879 (2004)
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[文献書誌] S.K.Park, J.Tatebayashi, Y.Arakawa: "Structural and optical properties of high-density (>10^<11>cm^2) InAs QDs with varying Al(Ga)As matrix layer thickness"Physica E. 21. 279-284 (2004)
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[文献書誌] S.K.Park, J.Tatebayashi, C.J.Park, H.Y.Cho, Y.Arakawa: "High Density and High Uniformity InAs/AlAs QDs by Using Insertion Layer"The 12th Seoul International Symposium on the Physics of Semiconductors and Applications, Gyeongju, Korea (2004.03). 201 (2004)
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[文献書誌] S.K.Park, J.Tatebayashi, Y.Arakawa: "ENHANCED PL OF HIGH DENSITY (〜4.7×10^<11>cm^2) InAs QDs BY USING GRADED INTERFACE OF GaAs/AlAs/GaAs"CLEO-Pacific Rim 2003, Taipei, Taiwan (2003.12). 273 (2003)