-
[文献書誌] M.Watanabe,et.al: "Epitaxial Growth and Electrical Conductance of Metal(CoSi2)/Insulator(CaF2) Nanometer-Thick Layered Structures on Si(111)" Journal of Electronic Materials. 21. 783-789 (1992)
-
[文献書誌] M.Watanabe,et.al: "Nagative differential resistance of metal(CoS12)/insulator(CaF2) triple-barrier resonant tunneling diode" Applied Physics Letters. 62. 300-302 (1993)
-
[文献書誌] T.Suemasu,et.al: "Room temperature negative defferential resistance of metal(CoSi2)/insulator(CaF2) resonant tunneling deode" Electronics Letters. 28. 1432-1433 (1992)
-
[文献書誌] S.Muratake,et.al: "Transistor action of metal(CoSi2)/insulator(CaF2) hot electron transistor structure" Electronics Letters. 28. 1002-1003 (1992)
-
[文献書誌] M.Watanabe,et.al: "Epitaxial Growth of Metal(CoSi2)/Insulator(CaF2) Nanometer-Thick Layered Structure on Si(111)" Japanese Journal of Applied Physics. 31. L116-L118 (1992)
-
[文献書誌] M.Watanabe,et.al: "RHEED Oscillation During CaF2 growth on Si(111) by Partially Ionized-Beam-Epitaxy" Japanese Journal of Applied Physics. 32(Febr). (1993)