1992 年度実績報告書

界面制御されたInGaAsを用いた高空間分解能撮像デバイスの試作

研究課題

研究課題/領域番号	03555056
研究機関	北海道大学
研究代表者	長谷川英機北海道大学, 工学部, 教授 (60001781)
研究分担者	坪内夏朗三菱電気, LSI研究所, 部長赤沢正道北海道大学, 工学部, 助手 (30212400)
キーワード	電荷転送撮像素子 / InGaAs / 界面 / MIS / 界面制御 / 界面準位 / MIS形電界効果トランジスタ / 分子線エピタキシー
研究概要	本研究の目的は、「シリコン超薄膜界面制御層」を用いる新しいMIS界面制御技術の学問的理解を確立し、それにもとづき、プロセスに改良と最適化を加え、ユニークな材料物性をもつInGaAsを用いた電荷転送形撮像素子の製作に適用できる実用的な界面制御プロセス技術として確立することにある。平成4年度の成果は次の通りである。 (1)シリコン超薄膜界面制御技術をさらに最適化するためには、界面の原子プロフィールの原子層レベルでの精密なモニタと制御が必要であることを示し、その具体的方法として、XPS法によるモニタとシリコンの堆積と低温酸化を繰り返す制御法を確立した。 (2)開発された実用的シリコン超薄膜界面制御技術が、実際に、電荷転送形撮像素子製作に適用可能であることを実証するために、基本構造の試作と評価を行った。まず、リセス構造を有する空乏形MIS形電界効果トランジスタの試作を行ない、熱処理後の最大実効移動度は、3850cm^2/V・s、相互コンダクタンスは、ゲート長6μmのデバイスで、61mS/mmであった。また、ゲート長と相互コンダクタンスの関係から、速度飽和を考慮しても、ゲート1μmで250mS/mmが期待できることが判明した。さらに、ゲートステップ電圧印加後のドレイン電流ドリフトは、10^4秒後で5%以下に抑制された。さらに、実用的シリコン超薄膜界面制御技術を用いて、MIS形電荷転送形撮像素子の試作を行い、新しいプロセスが素子製作に適用可能であることを実証した。 (3)さらに、本研究のシリコン超薄膜界面制御技術の適用範囲を拡大するために、量子構造、ショットキ界面、ヘテロ界面への応用を試みた。まず、干渉露光法とMBE選択成長法で、形成されるInGaAs細線の表面不活性化に本研究のシリコン超薄膜界面制御技術を適用し、その有効性を示した。次に、シリコン超薄膜界面制御層により、GaAsショットキ障壁高の制御を試みたところ、障壁高を広範囲に、しかも、精密に制御できることが判明した。さらに、GaAs/AlAsおよびInGaAs/InAlAsヘテロ界面の制御の可能性をも検討した。

研究成果

(21件)

すべてその他

すべて文献書誌 (21件)

[文献書誌] H.Hasegawa: "Passivation Technology Using an Ultrathin Si Interface Control Layer for Air-Exposed InGaAs Surfaces" Proc.of 3rd Int.Conf.on Indium Phosphide and Related Materials(Cardiff,U.K.,April 1991). 630-633 (1991)
[文献書誌] H.Hasegawa: "Formation Mechanism of Schottky Barriers on MBE Grown GaAs Surfaces Subjected to Various Treatments" Applied Surface Science. 56-58. 317-324 (1992)
[文献書誌] M.Akazawa: "Control of GaAs and InGaAs Insulator-Semiconductor and Metal-Semicon-ductor Interfaces by Ultrathin MBE Si Layers" Japanese Journal of Applied Physics. 30. 3744-3749 (1991)
[文献書誌] T.Saitoh: "In-Situ Surface State Spectroscopy by Photoluminescence and Surface Current Transport for Compound Semiconductors" Japanese Journal of Applied Physics. 30. 3750-3754 (1991)
[文献書誌] B.X.Yang: "Migration Enhanced Epitaxy of InP Using Polycrystalline InP as Phosphorus Source" Japanese Journal of Applied Physics. 30. 3782-3787 (1991)
[文献書誌] 長谷川英機: "化合物半導体のショットキー障壁の形成機構" 応用物理. 60. 1214-1222 (1991)
[文献書誌] H.Fujikura: "Fabrication process and properties of InGaAs wires having Si interface control layers for removal of fermi level pinning" Appl.Sur.Sci.60/61. 702-709 (1992)
[文献書誌] H.Hasegawa: "Control of surface and interface Fermi level pinning for compoud semiconductor nanometer scale structures" Proc.of The 1st Int.Workshop on Quantum-Effect Physics,Electronics and Applications,(Luxor,Egypt,Jan.5-9,1992). 115-118 (1992)
[文献書誌] M.Akazawa: "Reappraisal of Si-interlayer-induced change of band discontinuity at GaAs-AlAs hetero-interface taking account of delta-doping" Jpn.J.Appl.Phys.31. L1012-1014 (1992)
[文献書誌] K.Koyanagi,: "Control of GaAs Schottky Barrier Height by Ultra-thin MBE Si Interface Control Lyer" Jpn.J.Appl.Phys.32. 502-509 (1993)
[文献書誌] M.Akazawa,: "Investigation of Valence Band Offset Modification at GaAs-AlAs and InGaAs-InAlAs Hetero-interfaces Induced by Si Interlayer" Proc.of 19th Int.Symp.on Gallium Arsenide and Related Compounds,(Karuizawa,September 28-October 2,1992). (1992)
[文献書誌] S.Kodama,: "Interface Profile Optimization in Novel Surface Passivation Scheme for InGaAs Nano-structures Using Si Interface Control Layer" J.Electron.Mater.22. 289-295 (1993)
[文献書誌] H.Hasegawa,: "Passivation Technology Using an Ultrathin Si Inter-face Control Layer for Air-Exposed InGaAs Surfaces" presented at 3rd Int.Conf.on Indium Phosphide and Related Materials,Cardiff(U.K.),April 1991.
[文献書誌] H.Hasegawa,: "Formation Mechanism of Schottky Barriers on MBE Grown GaAs Surfaces Subjected to Various Treatments" presented at 3rd Int.Conf.on The Formation of Semiconductor Interfaces(ICFSI-3),Rome,May 1991.
[文献書誌] M.Akazawa,: "Control of GaAs and InGaAs Insulator-Semiconductor and Metal-Semiconductor Interfaces by Ultrathin MBE Si Layers" presented at 1991 International Conference on Solid State Devices and Materials 1991.8(Yokohama).
[文献書誌] T.Saitoh,: "In-Situ Surface State Spectroscopy by Photoluminescence and Surface Current Transport for Compound Semiconductors" presented at 1991 International Conference on Solid State Devices and Materials 1991.8(Yokohama).
[文献書誌] B.X.Yang: "Migration Enhanced Epitaxy of InP Using Polycrystalline InP as Phosphorus Source" presented at 1991 International Conference on Solid State Devices and Materials 1991.8(Yokohama).
[文献書誌] H.Fujikura,: "Fabrication Process and Properties of InGaAs Wires Having Si Interface Control Layers for Removal of Fermi Level Pinning" presented at The 1st International Symposium on Atomically Controlled Surfaces and Interfaces(ACSI-1)Tokyo,November 1991.
[文献書誌] M.Akazawa,: "Removal of Fermi Level Pinning in InGaAs Nanostructures by Ultrathin MBE Si Interface Control Layer" presented at Electronic Materials Conference,Cambridge,June 1992.
[文献書誌] K.Koyanagi,: "Control of GaAs Schottky Barrier Height by Ultrathin MBE Si Interface Control Lyer" presented at 1992 Int.Conf.on Solid State Devices and Materials(SSDM'92),Tsukuba,August 26-28,1992.
[文献書誌] M.Akazawa,: "Investigation of Valence Band Offset Modification at GaAs-AlAs and InGaAs-InAlAs Heterointerfaces Induced by Si Interlayer" presented at Gallium Arsenide and Related Compounds,Karuizawa,September 28-October 2,1992.

1992 年度 実績報告書

界面制御されたInGaAsを用いた高空間分解能撮像デバイスの試作

研究代表者

長谷川 英機 北海道大学, 工学部, 教授 (60001781)

研究成果

[文献書誌] H.Hasegawa: "Passivation Technology Using an Ultrathin Si Interface Control Layer for Air-Exposed InGaAs Surfaces" Proc.of 3rd Int.Conf.on Indium Phosphide and Related Materials(Cardiff,U.K.,April 1991). 630-633 (1991)

[文献書誌] H.Hasegawa: "Formation Mechanism of Schottky Barriers on MBE Grown GaAs Surfaces Subjected to Various Treatments" Applied Surface Science. 56-58. 317-324 (1992)

[文献書誌] M.Akazawa: "Control of GaAs and InGaAs Insulator-Semiconductor and Metal-Semicon-ductor Interfaces by Ultrathin MBE Si Layers" Japanese Journal of Applied Physics. 30. 3744-3749 (1991)

[文献書誌] T.Saitoh: "In-Situ Surface State Spectroscopy by Photoluminescence and Surface Current Transport for Compound Semiconductors" Japanese Journal of Applied Physics. 30. 3750-3754 (1991)

[文献書誌] B.X.Yang: "Migration Enhanced Epitaxy of InP Using Polycrystalline InP as Phosphorus Source" Japanese Journal of Applied Physics. 30. 3782-3787 (1991)

[文献書誌] 長谷川 英機: "化合物半導体のショットキー障壁の形成機構" 応用物理. 60. 1214-1222 (1991)

[文献書誌] H.Fujikura: "Fabrication process and properties of InGaAs wires having Si interface control layers for removal of fermi level pinning" Appl.Sur.Sci.60/61. 702-709 (1992)

[文献書誌] H.Hasegawa: "Control of surface and interface Fermi level pinning for compoud semiconductor nanometer scale structures" Proc.of The 1st Int.Workshop on Quantum-Effect Physics,Electronics and Applications,(Luxor,Egypt,Jan.5-9,1992). 115-118 (1992)

[文献書誌] M.Akazawa: "Reappraisal of Si-interlayer-induced change of band discontinuity at GaAs-AlAs hetero-interface taking account of delta-doping" Jpn.J.Appl.Phys.31. L1012-1014 (1992)

[文献書誌] K.Koyanagi,: "Control of GaAs Schottky Barrier Height by Ultra-thin MBE Si Interface Control Lyer" Jpn.J.Appl.Phys.32. 502-509 (1993)

[文献書誌] M.Akazawa,: "Investigation of Valence Band Offset Modification at GaAs-AlAs and InGaAs-InAlAs Hetero-interfaces Induced by Si Interlayer" Proc.of 19th Int.Symp.on Gallium Arsenide and Related Compounds,(Karuizawa,September 28-October 2,1992). (1992)

[文献書誌] S.Kodama,: "Interface Profile Optimization in Novel Surface Passivation Scheme for InGaAs Nano-structures Using Si Interface Control Layer" J.Electron.Mater.22. 289-295 (1993)

[文献書誌] H.Hasegawa,: "Passivation Technology Using an Ultrathin Si Inter-face Control Layer for Air-Exposed InGaAs Surfaces" presented at 3rd Int.Conf.on Indium Phosphide and Related Materials,Cardiff(U.K.),April 1991.

[文献書誌] H.Hasegawa,: "Formation Mechanism of Schottky Barriers on MBE Grown GaAs Surfaces Subjected to Various Treatments" presented at 3rd Int.Conf.on The Formation of Semiconductor Interfaces(ICFSI-3),Rome,May 1991.

[文献書誌] M.Akazawa,: "Control of GaAs and InGaAs Insulator-Semiconductor and Metal-Semiconductor Interfaces by Ultrathin MBE Si Layers" presented at 1991 International Conference on Solid State Devices and Materials 1991.8(Yokohama).

[文献書誌] T.Saitoh,: "In-Situ Surface State Spectroscopy by Photoluminescence and Surface Current Transport for Compound Semiconductors" presented at 1991 International Conference on Solid State Devices and Materials 1991.8(Yokohama).

[文献書誌] B.X.Yang: "Migration Enhanced Epitaxy of InP Using Polycrystalline InP as Phosphorus Source" presented at 1991 International Conference on Solid State Devices and Materials 1991.8(Yokohama).

[文献書誌] H.Fujikura,: "Fabrication Process and Properties of InGaAs Wires Having Si Interface Control Layers for Removal of Fermi Level Pinning" presented at The 1st International Symposium on Atomically Controlled Surfaces and Interfaces(ACSI-1)Tokyo,November 1991.

[文献書誌] M.Akazawa,: "Removal of Fermi Level Pinning in InGaAs Nanostructures by Ultrathin MBE Si Interface Control Layer" presented at Electronic Materials Conference,Cambridge,June 1992.

[文献書誌] K.Koyanagi,: "Control of GaAs Schottky Barrier Height by Ultrathin MBE Si Interface Control Lyer" presented at 1992 Int.Conf.on Solid State Devices and Materials(SSDM'92),Tsukuba,August 26-28,1992.

[文献書誌] M.Akazawa,: "Investigation of Valence Band Offset Modification at GaAs-AlAs and InGaAs-InAlAs Heterointerfaces Induced by Si Interlayer" presented at Gallium Arsenide and Related Compounds,Karuizawa,September 28-October 2,1992.

1992 年度実績報告書

長谷川英機北海道大学, 工学部, 教授 (60001781)

[文献書誌] 長谷川英機: "化合物半導体のショットキー障壁の形成機構" 応用物理. 60. 1214-1222 (1991)