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[文献書誌] O.Sakata,H.Hashizume and H,Kurashina: "In-plane structure of arsenic deposited or the Si(111)surface studied with the grazing angle X-ray standing-wave methods" Physical Review B.48. 11408-11411 (1993)
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[文献書誌] M.Nakanishi,H.Hashizume,T.Terashima,Y.Bando,O.Michikami,S.Maeyama & M.Oshima: "Structure of the growth interface of Y-Ba-Cu-O analogs on SrTiO_3(001)substrates" Physical Review B.48. 10524-10529 (1993)
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[文献書誌] M.Kataoka,K.Suda,N.Ishizawa,F.Marumo,Y.Shimizugawa and K.Ohsumi: "Determination of the c/a ratio of a submicrometer-sized crystal of tetragonal barium titanate by the synclntron radiation" Journal of the Ceramic Society of Japan.102. 213-216 (1994)
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[文献書誌] Y.Nogami,K.Ogasawara,S.Takeuchi,T.Ishiguro,K.Ohsumi and Y.Shimizugawa: "High resolntion X-ray study on anamolous diffraction peak shift in dimerized Lagmuir-Blodgett Superlattice films" J.physical Society of Japan. 62. 3114-3126 (1993)
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[文献書誌] A.W.Stevenson: "X-ray Integrated Intensities from Scmiconductor Substrates and Epitaxic Layers-a Comparison of Kinematical and Dynamical Theories with Experiment" Acta Cryst. A49. 174-183 (1993)
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[文献書誌] D.Gao,A.W.Stevenson,S.W.Wilkins,G.N.Pain: "Microcracks in a GaAs/Si wafer Studied by X-ray Diffraction" J.Cryst.Growth. 129. 134-142 (1993)