-
[文献書誌] T.Ohmi: "ULSI Reliability Through Ultraclean Processing" Proc.IEEE. 81. 716-729 (1993)
-
[文献書誌] T.Ohmi: "New Technique for the Measurement of Adsorbed Moisture Concentration on a Solid Surface" Rev.Sci.Instrum.64. 2683-2686 (1993)
-
[文献書誌] Y.Maeda: "High-Selectivity and High-Deposition Rate Tungsten CVD Freed chamber Cleaning" J.Electrochem.Soc.141. 566-591 (1994)
-
[文献書誌] H.Uetake: "Proposal for Equipment Standardization by Dual-Frequency-Excitation Plasma Processing" Extended Abstracts,1993 International Conference on Solid State Devices and Materials,Chiba. 591-593 (1993)
-
[文献書誌] K.Ino: "In situ Chamber Cleaning Using Halo-genated-Gas Plasmas Evaluated by Plasma-Parameter Extraction" Extended Abstracts,1993 International Conference on Solid State Devices and Materials,Chiba. 588-590 (1993)
-
[文献書誌] K.Ino: "In situ Chamber Cleaning Using Halo-genated-Gas Plasmas Evaluated by Plasma-Parameter Analysis" Extended Abstracts,184th Electrochemical Society Meeting,New Orleans. 539-540 (1993)
-
[文献書誌] M.Hirayama: "Low-Temperature Silicon Epitaxy by Precisely Controlled Plasma Processing" Proceedings,International Workshop on Process and Devices of Scaled LSI's,Seoul.152-157 (1993)
-
[文献書誌] M.Hirayama: "Impact of High-Precision RF-Plasma Control on Very-Low-Temperature Silicon Epitaxy" Extended Abstracts,1993 International Conference on Solid State Devices and Materials,Chiba. 210-212 (1993)
-
[文献書誌] M.Morita: "Characterization and Control of Native Oxide on Silicon" Japan.J.Apply.Phys. 33. 370-374 (1994)
-
[文献書誌] H.Goto: "Dual Excitation Reactive Ion Etcher for Low Energy Plasma Processing" J.Vac.Science and Technology A. 10. 3048-3054 (1992)
-
[文献書誌] H.Goto: "A proposed Magnetically Enhanced Reactive Ion Etcher for ULSI" IEEE Trans.Semiconductor Manufacturing. 5. 337-346 (1992)
-
[文献書誌] H.Goto: "Independent Control of Ion Density and Ion Bombardment Energy in a Dual RF Excitation Plasma" IEEE Trans.Semiconductor Manufacturing. 6. 58-64 (1993)
-
[文献書誌] Y.Kawai: "Ultra-low-Temperature growth of high-integrity gate oxide films by low-energy ion-assisted oxidation" Appl.Phys.Lett.(印刷中).
-
[文献書誌] T.Ohmi: "The Technology of Chromium Oxide Passivation on Stainless Steel Surface" J.Electrochem.Soc. 140. 1691-1699 (1993)
-
[文献書誌] S.Takahashi: "Corrosion-resistant and non-catalytic properties of Cr_2O_3 surface treatment for specialty gases" Proceedings Microcontamination 93 Conference,San Jose,Sept.1993. 596-605 (1993)
-
[文献書誌] W.Shindo: "Low Temperature Silicon Epitaxy Technology Using a Low-Energy Ion Bombardment Process" Proc.International Conference on Advanced Microelectronic Devices and Processing,March 3-5. 441-444 (1994)