1995 年度実績報告書

プラズマプロセスにおけるフリーラジカルに関する研究

研究課題

研究課題/領域番号	05237104
研究機関	名古屋大学
研究代表者	後藤俊夫名古屋大学, 工学部, 教授 (50023255)
研究分担者	真壁利明慶応義塾大学, 理工学部, 教授 (60095651) 渡辺征夫九州大学, 工学部, 教授 (80037902) 橘邦英京都大学, 工学部, 教授 (40027925) 村岡克紀九州大学, 総合理工学研究科, 教授 (80038546) 菅井秀郎名古屋大学, 工学部, 教授 (40005517)
キーワード	フリーラジカル / プラズマ / プロセス / レーザー / イオン / 分光 / 微粒子 / シリコン
研究概要	1.分光法による気相中のラジカル計測の研究赤外半導体レーザー吸収法、レーザー誘起蛍光法など各種レーザー分光法、出現質量分析法および紫外吸収分光法を用いて、種々の方法で励起されたプラズマ中のCF_3、CF_2、CF、CH_3、SiH_3、SiH_2、SiH、Siラジカルを測定しラジカルの振る舞いおよびラジカルの制御法を明らかにした。 2.気相および表面におけるラジカル反応素過程の研究プラズマプロセス用の反応性分子(CF_4、CHF_3、SF_6)への電子衝突によって生じるラジカルの解離生成断面積を測定した。炭化水素イオンおよびフッ化炭素イオンを表面に衝突させたときのイオン種の測定と解離過程を明らかにした。ラジカルとフルオロカーボン膜、炭化水素薄膜堆積特性およびエッチング特性との相関関係を明らかにし、重要なラジカル種の決定を行つた。 3.プラズマプロセスにおける水素ラジカル計測法の確立とその化学反応過程解明への適用波長205nmの二光子励起レーザー誘起蛍光法により平行平板型RF励起シランプラズマ中の水素ラジカル密度を測定し、その振る舞いを明らかにした。 4.プラズマ・固体界面でのラジカルの反応過程の研究高速位相変調FT-IR分光偏光法を開発し、CF_4プラズマに曝されたSi表面の状態を観察した。メタンプラズマ中の炭素微粒子が帯電してクーロン力で結晶格子状に配列成長する現象を観測し、その機構を調べた。高分解能電子エネルギー損失分光法を用いてSi表面の酸化の初期過程を明らかにした。 5.シランプラズマ中の微粒子成長機構の研究レーザー散乱法、レーザー吸収分光法、光脱離法を用いて高周波シランプラズマ中の微粒子の発生・成長過程を解明した。さらに、微粒子発生に対するプラズマの周波数依存性を明らかにした。 6.プラズマプロセスにおけるラジカルのダイナミックシナジズムのモデリングエッチング、アッシング等で用いられる容量結合型高周波酸素プラズマの構造を時空間分解発光分光法によって測定し、入力とともにシース幅が増加することを見いだした。材料表面のプラズマへの影響についてモデリングから調査し、ラジカルの制御法について検討した。

研究成果

(40件)

すべてその他

すべて文献書誌 (40件)

[文献書誌] S.Naito: "H2 partial pressure dependences of CH_3 radical density and effects of H_2 dilution on carbon thin film formation in RF discharge CH_4 plasma" Jpn.J.Appl.Phys.34. 302-303 (1995)
[文献書誌] M.Ikeda: "Synthesis of diamond using RF magnetron methanol plasma CVD assisted by hydrogen radical injection" Jpn.J.Appl.Phys.34. 2484-2488 (1995)
[文献書誌] K.Miyata: "CFx (x=1-3) radical measurements in ECR etching plasma employing C_4F_8 gas by infrared diode laser absorption spectroscopy" Jpn.J.Appl.Phys.34. L444-L447 (1995)
[文献書誌] M.Ikeda: "CH_3 radical density in electron cyclotron resonance CH_3OH and CH_3OH/H_2 plasmas" Jpn.J.Appl.Phys.34. 3273-3277 (1995)
[文献書誌] A.Kono: "Laser Induced Fluorescence study of the SiH_2 density in RF SiH_4 plasma with Xe,Ar,He and H_2 dilution gases" Jpn.J.Appl.Phys.34. 307-311 (1995)
[文献書誌] K.Maruyama: "Variation of CF_3,CF_2 and CF radical densities with passage of RF CHF_3 discharge duration" J.Phys.D. 28. 884-887 (1995)
[文献書誌] H.Nomura: "Rate constants for the reactions of SiH and SiH_2 with in a low pressure SiH_4 plasma" J.Phys.D. 28. 1977-1982 (1995)
[文献書誌] M.Inayoshi: "High rate anisotropic ablation and deposition of polytetrafluoroethylene using synchrotron radiation process" Jpn.J.Appl.Phys. 34. L1675-L1677 (1995)
[文献書誌] T.Goto: "Measurement of radicals in plasmas for semiconductor processing using laser spectroscopic techniques" J.Advanced Automation Technology. 17. 284-288 (1995)
[文献書誌] K.Nakamura: "Helicon wave measurements in an inductively coupled magnetron plasma" Australian J.Phys.48. 461-468 (1995)
[文献書誌] H.Sugai: "Diagnostics and control of radicals in an inductively coupled etching reactor" J.Vac.Sci & Technol.A13. 887-893 (1995)
[文献書誌] H.Sugai: "A biased optical probe method for measurements of electron energy distribution in a aplasma" Plasma Sources Sci.Technol.4. 366-372 (1995)
[文献書誌] K.Nakamura: "Hot spot and electron heating processes in a helicon-wave excited plasma" Jpn.J.Appl.Phys.34. 366-372 (1995)
[文献書誌] H.Toyota: "Simple direct monitoring of SiH_3 radical and particulates in a silane plasma with ultra violet transmission spectroscopy" Jpn.J.Appl.Phys.34. L448-L451 (1995)
[文献書誌] Y.Mitsuoka: "Observation of ion scattering from metal surfaces bombarded with low-energy hydrocarbon ions" Jpn.J.Appl.Phys.34. L516-L519 (1995)
[文献書誌] H.Sugai: "Absolute cross section for the electron-impact dissociation of CF_4 and CHF_3 into the CFx (x=1-3) neutral radicals" Contrib.Plasma Phys.35. 415-420 (1995)
[文献書誌] M.Ito: "Relative cross section for electron-impact dissociation of SF_6 into SFx (x=1-3) neutral radicals" Contrib.Plasma Phys.35. 405-413 (1995)
[文献書誌] Y.Mitsuoka: "Dissociative ion yields on metal surfaces bombarded with low-energy fluorocarbon ions" Jpn.J.Appl.Phys.34. L1486-L1489 (1995)
[文献書誌] H.Sugai: "Recent development of reactive plasma diagnostics and radical control" J.Plasma and Fusion Research. 71. 191-201 (1995)
[文献書誌] H.Ikeda: "Oxidation of H-terminated Si (100) Surfaces studied by high-resolution electron energy loss spectroscopy" J.Appl.Phys.77. 5125-5129 (1995)
[文献書誌] H.Ikeda: "Studies on reaction processes of hydrogen and oxygen atoms with H_2O-absorbed Si (100) surfaces by high-resolution electron energy loss spectroscopy" Jpn.J.Appl.Phys.34. 2191-2195 (1995)
[文献書誌] K.Tchibana: "Analysis of the coulomb-solidification process in particle plasma" Aust.J.Phys.48. 469-477 (1995)
[文献書誌] K.Hanaoka: "In-situ measurement of gas-phase reacitions during the metal-ogeanic chemical vapor deposition of copper using Fourier-transform infrared spectroscopy" Thin Solid Films. 262. 209-217 (1995)
[文献書誌] K.Hanaoka: "In situ monitoring of selective coppre deposition processes in a metal-organic chemical vapor deposition using Fourier-transform infrared reflection absorption spectroscopy" Jpn.J.Appl.Phys.34. 2430-2439 (1995)
[文献書誌] T.Shirefuji: "Measurement and calculation of SiH_2 radical density in SiH_4 and Si_2H_6 plasma for the deposition of hydrogenated amorphous silicon thin films" Jpn.J.Appl.Phys.34. 4239-4246 (1995)
[文献書誌] T.Shirafuji: "In situ Fourier transform infrared ellipsometry for monitoring c-Si etching process by CF_4 plasma" Proceedings of the 12th International Symposium on Plasma Chemistry. 1413-1418 (1995)
[文献書誌] T.Shirafuji: "Role of H radicals in the low temperature growth of poly-Si films by plasma CVD using SiF_4/SiH_4/H_2" Proceeding of the 12th International Symposium on Plasma Chemistry. 2125-2130 (1995)
[文献書誌] K.Okimure: "Preparation of routile TiO_2 films by RF magnetron sputtering" Jpn.J.Appl.Phys.34. 4950-4955 (1995)
[文献書誌] R.E.Robson: "Frequency variation of the mean energy of r.f electron swarms" Aust.J.Phys.48. 335-345 (1995)
[文献書誌] Y.Hosokawa: "Modeling and measurement of submicron particles in RF plasma in Ar" Aust.J.Phys.48. 439-452 (1995)
[文献書誌] M.Shibata: "O_2 rf discharge structure in parallel plates reactor at 13.56 MHz for material processing" J.Appl.Phys.77. 6181-6187 (1995)
[文献書誌] 真壁利明: "低温プロセスプラズマモデリングの現状と課題" 応用物理. 64. 547-553 (1995)
[文献書誌] 真壁利明: "SF_6低温プラズマと半導体プロセス周辺" 電気学会誌. 115. 492-493 (1995)
[文献書誌] M.Shibata: "Effect of surface material on spatiotemporal structure in O_2RF glow discharge" Jpn.J.Appl.Phys.34. 6230-6236 (1995)
[文献書誌] M.Shiratani: "Simultanious in-situ meassurements of properties of particulates in rf silane plasma using a polarization-sensitive laser-light-scattering method" J.Appl.Phys.79. 104-109 (1996)
[文献書誌] H.Kawasaki: "Discharge frequency dependences of particulate growth in high frequency silane plasma" Appl.Phys.Lett.67. 3880-3882 (1995)
[文献書誌] 渡辺征夫: "プラズマCVD半導体プロセスにおける微粒子の発生と測定" 日本エアロゾル学会. 10. 13-19 (1995)
[文献書誌] P.L.G.Ventzek: "Simulation of real-time control of two-dimensional features in inductively coupled plasma for etching applications" J.Vac.Sci.&Technol・. A13. 2456-2463 (1996)
[文献書誌] K.Tanaka: "A modeling for deposition process of hydrogenated amorphous silicon thin film using a Monte Carlo method (II)" Proc.13th Symp.Plasma Processing. 13. 101-104 (1996)
[文献書誌] A.Shinohara: "Monte Carlo simulation of SiH_4^+ ion swarms under DC and RF electric fields (2)" Proc.13th Symp.Plasma Processing. 13. 409-411 (1996)

1995 年度 実績報告書

プラズマプロセスにおけるフリーラジカルに関する研究

研究代表者

後藤 俊夫 名古屋大学, 工学部, 教授 (50023255)

研究成果

[文献書誌] S.Naito: "H2 partial pressure dependences of CH_3 radical density and effects of H_2 dilution on carbon thin film formation in RF discharge CH_4 plasma" Jpn.J.Appl.Phys.34. 302-303 (1995)

[文献書誌] M.Ikeda: "Synthesis of diamond using RF magnetron methanol plasma CVD assisted by hydrogen radical injection" Jpn.J.Appl.Phys.34. 2484-2488 (1995)

[文献書誌] K.Miyata: "CFx (x=1-3) radical measurements in ECR etching plasma employing C_4F_8 gas by infrared diode laser absorption spectroscopy" Jpn.J.Appl.Phys.34. L444-L447 (1995)

[文献書誌] M.Ikeda: "CH_3 radical density in electron cyclotron resonance CH_3OH and CH_3OH/H_2 plasmas" Jpn.J.Appl.Phys.34. 3273-3277 (1995)

[文献書誌] A.Kono: "Laser Induced Fluorescence study of the SiH_2 density in RF SiH_4 plasma with Xe,Ar,He and H_2 dilution gases" Jpn.J.Appl.Phys.34. 307-311 (1995)

[文献書誌] K.Maruyama: "Variation of CF_3,CF_2 and CF radical densities with passage of RF CHF_3 discharge duration" J.Phys.D. 28. 884-887 (1995)

[文献書誌] H.Nomura: "Rate constants for the reactions of SiH and SiH_2 with in a low pressure SiH_4 plasma" J.Phys.D. 28. 1977-1982 (1995)

[文献書誌] M.Inayoshi: "High rate anisotropic ablation and deposition of polytetrafluoroethylene using synchrotron radiation process" Jpn.J.Appl.Phys. 34. L1675-L1677 (1995)

[文献書誌] T.Goto: "Measurement of radicals in plasmas for semiconductor processing using laser spectroscopic techniques" J.Advanced Automation Technology. 17. 284-288 (1995)

[文献書誌] K.Nakamura: "Helicon wave measurements in an inductively coupled magnetron plasma" Australian J.Phys.48. 461-468 (1995)

[文献書誌] H.Sugai: "Diagnostics and control of radicals in an inductively coupled etching reactor" J.Vac.Sci & Technol.A13. 887-893 (1995)

[文献書誌] H.Sugai: "A biased optical probe method for measurements of electron energy distribution in a aplasma" Plasma Sources Sci.Technol.4. 366-372 (1995)

[文献書誌] K.Nakamura: "Hot spot and electron heating processes in a helicon-wave excited plasma" Jpn.J.Appl.Phys.34. 366-372 (1995)

[文献書誌] H.Toyota: "Simple direct monitoring of SiH_3 radical and particulates in a silane plasma with ultra violet transmission spectroscopy" Jpn.J.Appl.Phys.34. L448-L451 (1995)

[文献書誌] Y.Mitsuoka: "Observation of ion scattering from metal surfaces bombarded with low-energy hydrocarbon ions" Jpn.J.Appl.Phys.34. L516-L519 (1995)

[文献書誌] H.Sugai: "Absolute cross section for the electron-impact dissociation of CF_4 and CHF_3 into the CFx (x=1-3) neutral radicals" Contrib.Plasma Phys.35. 415-420 (1995)

[文献書誌] M.Ito: "Relative cross section for electron-impact dissociation of SF_6 into SFx (x=1-3) neutral radicals" Contrib.Plasma Phys.35. 405-413 (1995)

[文献書誌] Y.Mitsuoka: "Dissociative ion yields on metal surfaces bombarded with low-energy fluorocarbon ions" Jpn.J.Appl.Phys.34. L1486-L1489 (1995)

[文献書誌] H.Sugai: "Recent development of reactive plasma diagnostics and radical control" J.Plasma and Fusion Research. 71. 191-201 (1995)

[文献書誌] H.Ikeda: "Oxidation of H-terminated Si (100) Surfaces studied by high-resolution electron energy loss spectroscopy" J.Appl.Phys.77. 5125-5129 (1995)

[文献書誌] H.Ikeda: "Studies on reaction processes of hydrogen and oxygen atoms with H_2O-absorbed Si (100) surfaces by high-resolution electron energy loss spectroscopy" Jpn.J.Appl.Phys.34. 2191-2195 (1995)

[文献書誌] K.Tchibana: "Analysis of the coulomb-solidification process in particle plasma" Aust.J.Phys.48. 469-477 (1995)

[文献書誌] K.Hanaoka: "In-situ measurement of gas-phase reacitions during the metal-ogeanic chemical vapor deposition of copper using Fourier-transform infrared spectroscopy" Thin Solid Films. 262. 209-217 (1995)

[文献書誌] K.Hanaoka: "In situ monitoring of selective coppre deposition processes in a metal-organic chemical vapor deposition using Fourier-transform infrared reflection absorption spectroscopy" Jpn.J.Appl.Phys.34. 2430-2439 (1995)

[文献書誌] T.Shirefuji: "Measurement and calculation of SiH_2 radical density in SiH_4 and Si_2H_6 plasma for the deposition of hydrogenated amorphous silicon thin films" Jpn.J.Appl.Phys.34. 4239-4246 (1995)

[文献書誌] T.Shirafuji: "In situ Fourier transform infrared ellipsometry for monitoring c-Si etching process by CF_4 plasma" Proceedings of the 12th International Symposium on Plasma Chemistry. 1413-1418 (1995)

[文献書誌] T.Shirafuji: "Role of H radicals in the low temperature growth of poly-Si films by plasma CVD using SiF_4/SiH_4/H_2" Proceeding of the 12th International Symposium on Plasma Chemistry. 2125-2130 (1995)

[文献書誌] K.Okimure: "Preparation of routile TiO_2 films by RF magnetron sputtering" Jpn.J.Appl.Phys.34. 4950-4955 (1995)

[文献書誌] R.E.Robson: "Frequency variation of the mean energy of r.f electron swarms" Aust.J.Phys.48. 335-345 (1995)

[文献書誌] Y.Hosokawa: "Modeling and measurement of submicron particles in RF plasma in Ar" Aust.J.Phys.48. 439-452 (1995)

[文献書誌] M.Shibata: "O_2 rf discharge structure in parallel plates reactor at 13.56 MHz for material processing" J.Appl.Phys.77. 6181-6187 (1995)

[文献書誌] 真壁利明: "低温プロセスプラズマモデリングの現状と課題" 応用物理. 64. 547-553 (1995)

[文献書誌] 真壁利明: "SF_6低温プラズマと半導体プロセス周辺" 電気学会誌. 115. 492-493 (1995)

[文献書誌] M.Shibata: "Effect of surface material on spatiotemporal structure in O_2RF glow discharge" Jpn.J.Appl.Phys.34. 6230-6236 (1995)

[文献書誌] M.Shiratani: "Simultanious in-situ meassurements of properties of particulates in rf silane plasma using a polarization-sensitive laser-light-scattering method" J.Appl.Phys.79. 104-109 (1996)

[文献書誌] H.Kawasaki: "Discharge frequency dependences of particulate growth in high frequency silane plasma" Appl.Phys.Lett.67. 3880-3882 (1995)

[文献書誌] 渡辺征夫: "プラズマCVD半導体プロセスにおける微粒子の発生と測定" 日本エアロゾル学会. 10. 13-19 (1995)

[文献書誌] P.L.G.Ventzek: "Simulation of real-time control of two-dimensional features in inductively coupled plasma for etching applications" J.Vac.Sci.&Technol・. A13. 2456-2463 (1996)

[文献書誌] K.Tanaka: "A modeling for deposition process of hydrogenated amorphous silicon thin film using a Monte Carlo method (II)" Proc.13th Symp.Plasma Processing. 13. 101-104 (1996)

[文献書誌] A.Shinohara: "Monte Carlo simulation of SiH_4^+ ion swarms under DC and RF electric fields (2)" Proc.13th Symp.Plasma Processing. 13. 409-411 (1996)

1995 年度実績報告書

後藤俊夫名古屋大学, 工学部, 教授 (50023255)