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[文献書誌] H.Hirayama: "Lasing action of Ga_<0.67>In_<0.33>As/GaInAsP/InP tensile-strained quantum-box laser" Electronics Letters. 30. 142-143 (1994)
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[文献書誌] H.Hirayama: "Cerrier Capture Time and Its Effect on the Efficiency of Quantum-Well Lasers" IEEE J.Quantum Electron.30. 54-62 (1994)
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[文献書誌] H.Hirayama: "Emission Energy Shift in GaInAs/GaInAsP Strained Quantum-Box Structures Due to 0-Dimensional Quantum-Box Effect" Jpn.J.Appl.Phys.33. 3671-3577 (1994)
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[文献書誌] K.Kudo: "Fabrication of GaInAs/GaInAsP/InP Multi-Quantum-Wires and-Boxes by Substrate-Potential-Controlled Electron Cyclotron Resonance Reactive Ion Beam Etching" Jpn.J.Appl.Phys.33. L1383-L1385 (1994)
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[文献書誌] K.C.Shin: "Temperature Dependence of Ga_<0.66>In_<0.34>As/InP Tensile-Strained Quasi-Quantum-Wire Laser Fabricated by Wet Chemical Etching and 2-Step OMVPE Growth" IEEE Photonics Technol.Lett.(to be published).
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[文献書誌] Y.Huang: "Stauration characteristics of GaInAs/GaInAsP/InP tensile strained quantum well semiconductor laser amplifier with tapered waveguide structures" IEEE J.Quantum Electron.30. 2034-2039 (1994)