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[文献書誌] Y.Nagamune,S.Tsukamoto,M.Nishioka,and Y.Arakawa: "Growth process and mechanism ofnanometer-scale GaAs dot-structures using MOCVD selective growth" Journal of Crystal Growth. 126. 707-717 (1993)
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[文献書誌] S.Tsukamoto,Y.Nagamune,M.Nishioka,and Y.Arakawa: "Fabrication of GaAs arrowhead-shaped quantum wires by metalorganic chemical vapor deposition selective growth" Applied Physic Letters. 62. 49-51 (1993)
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[文献書誌] Y.Arakawa,Y.Nagamune,M.Nishioka,and S.Tsukamoto: "Fabrication and optical properties of GaAs quantum wires and dots by MOCVD selective growth" Semiconductor Science Technology. 8. 1082-1088 (1993)
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[文献書誌] S.Tsukamoto,Y.Nagamune,M.Nishioka,and Y.Arakawa: "Fabrication of GaAs quantum wires(〜10nm)by metalorganic chemical vapor selective deposition growth" Applied Physics Letters. 63. 355-357 (1993)
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[文献書誌] Y.Nagamune,M.Nishioka,S.Tsukamoto,and Y.Arakawa: "GaAs quantum dots with lateral dimension of 25nm fabricated by selective metal-organic chemical vapor deposition growth" Applied Physics Letters. (出版予定). (1994)
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[文献書誌] Y.Nagamune,H.Sakaki,L.P.Korwen heren,L.C.Mur,C.J.P.M.Harmans,J.Motohisa,and H.Noge: "Single electron transport and current quantization in a novel quantumdot structure" Applied Physics Letters. (出版予定). (1994)