1994 年度実績報告書

超薄膜超微細構造デバイスに関する研究

研究課題

研究課題/領域番号	06044076
研究機関	東京工業大学
研究代表者	小田俊理東京工業大学, 工学部, 助教授 (50126314)
研究分担者	WILLIAM Miln ケンブリッジ大学, 工学部, 教授 DAVID Moore ケンブリッジ大学, 工学部, 助教授杉浦修東京工業大学, 工学部, 助教授 (10187643) 松村正清東京工業大学, 工学部, 教授 (30110729)
キーワード	超高速デバイス / 超伝導デバイス / 極微細加工プロセス / 電子ビーム露光技術 / 超薄膜結晶成長 / 量子効果デバイス / 原子層エピタキシ- / 薄膜トランジスタ
研究概要	1.トレンチ酸化膜シリコン量子細線構造のシミュレーションと容量測定スーパーコンピュータを用いて、シリコン1次元量子構造の電子状態を数値計算した。電子ビーム露光技術とECR反応性イオンエッチングによりデバイスを作製し、低温における容量電圧特性の測定により量子効果を実験的に検証した。 2.電子ビーム照射による高温超伝導ジョセフソン接合の作製と特性評価収束電子ビーム照射により作製したYBaCuO薄膜ジョセフソン接合の臨界電流の磁場依存性の測定から、接合は均一に作製できていることが明らかになった。400Kにおけるアニールにより接合の劣化特性を改善できることを明らかにした。 3.原子層エピタキシ-による超薄膜成長有機金属原料を用いて、Si、Ge、SiCおよびYBaCuO薄膜の原子層エピタキシ-を行い、原子層レベルで制御された超薄膜の作製に成功した。さらに、新原料TICSを用いて、SiO_2膜の低温原子層堆積に成功した。真空アーク放電による4配位アモルファスダイアモンドの堆積を行った。 4.プラズマプロセスによるナノ結晶S量子ドット構造の作製と評価シランガスを原料としてプラズマセルを用いてナノ結晶Siを作製し、原子間力顕微鏡、透過型電子顕微鏡により構造評価を行った。粒径4〜6nmのナノ結晶Siを作製できた。基板上の微小段差に選択的に核形成をさせることができた。酸化処理により、室温で可視光の発光を観測した。

研究成果
(29件)

すべてその他

すべて文献書誌 (29件)

[文献書誌] S.Oda: "Staircaselike Structures in In Situ Optical Reflectance Measurement as an Evidence for Two-Dimensional Crystal Growth in Layer-by-Layer Chemical Vapor Deposition." Applied Surface Science. 75. 259-262 (1994)
[文献書誌] S.Oda: "Atomic Layer-by-Layer Metalorganic Chimical Vapor Deposition of YBa2Cu30x Thin Films." Bulletins of Electrotechnical Laboratory. 58. 107-111 (1994)
[文献書誌] H.Zama: "High Quality YBaCuO Thin Film Growth by Low-Temperature Metalorganic Chemical Vapor Deposition Using Nitrous Oxide" Materials Research Society Symposium Proceedings. 335. 291-296 (1994)
[文献書誌] H.Zama: "Superconducting Properties of Ultrathin Films of YBaCuO Prepared by Metalorganic Chemical Vapor Deposition at 500℃" Japanese Journal of Applied Physics. 33. L312-L314 (1994)
[文献書誌] M.Otobe: "Selective Etching of Hydrogenated Amorphous Silicon by Hydrogen Plasma" Japanese Journal of Applied Physics. 33. 4442-4445 (1994)
[文献書誌] S.Oda: "Preparation of Nanocrystalline Silicon by Digital Chemical Vapor Deposition" Springer Series in Material Sciences,. 31. 248-253 (1994)
[文献書誌] S.Oda: "Preparation of Y-doped SrCuO2 Infinite Layer Films by MOCVD" Physica C. 235-240. 979-980 (1994)
[文献書誌] 小田俊理: "酸化物超伝導体の原子層MOCVD法における光学的その場成長モニター" 日本結晶成長学会誌. 21. S325-S332 (1994)
[文献書誌] S.Oda: "Atomic layer Controlled Metalorganic Chemical Vapor Deposition of Superconducting YBa2Cu30x Films" Journal of Crystal Growth. 145. 232-236 (1994)
[文献書誌] S.Oda: "Superconductivity and Surface Morphology of YBCO Thin Films Prepared by Metalorganic Chemical Vapor Deposition" IEEE Transactions of Applied Superconductivity. (in press). (1995)
[文献書誌] S.Oda: "Preparation of Nanocrystalline Silicon by Pulsed Plasma Processing" Materials Research Society Symposium Proceedings. 358(in press). (1995)
[文献書誌] M.Otobe: "Nanocrystalline Silicon Formed in Very-High-Frequency SiH4 Plasma" Proc.12th Symp.on Plasma Processing. (in press). (1995)
[文献書誌] T.Tsukui: "Computer Simulation and Measurement of Capacitance-Voltage Characteristics in Quantum Wire Devices of Trench-Oxide MOS Structure" Japanese Journal of Applied Physics. 34(in press). (1995)
[文献書誌] S.Imai: "Hydrogen Assisted ALE of Silicon" Applied Surface Science. 82/83. 322-326 (1994)
[文献書誌] S.Sugahara: "Atomic Layer Epitaxy of Germanium" Applied Surface Science. 82/83. 380-386 (1994)
[文献書誌] W.Gasser: "Quasi-Monolayer Deposition of Silicon Dioxide" Thin Solid films. 250. 213-218 (1994)
[文献書誌] H.Taniguchi: "Low-Temperature Chemical Vapor Deposition of Silicon Dioxide Using Tetra-Isocyanate-Silane." Japanese Journal of Applied Physics. 33. L1485-L1488 (1994)
[文献書誌] A.J.Pauza: "Josephson Junction in YBa_2Cu_3O_7-δ by Electron Beam Irradition" Physica B. 194-196. 119-122 (1994)
[文献書誌] D.F.Moore: "Nanostructure Fabrication and Vacuum Tunneling Devices" FED Journal. 4. 58-64 (1994)
[文献書誌] D.F.Moore: "High Tc Electronics at a Junction?" Physics World. 24-25 (1995)
[文献書誌] A.J.Pauza: "Electron Beam Damaged Junctions-Stability,Reproducibility,and Scaling Laws." IEEE Transactions on Applied Superconductivity. (in press). (1995)
[文献書誌] P.Morgen: "Thermally Stimulated Defect Removal in Hydrogenated Amorphous Silicon THin Film Transistors" 164-166(in press). (1994)
[文献書誌] C.Davis: "Properties of Tetrahedral Amorphous Diamond in a Filtered Vacuum Arc in the Presence of Hydrogen" Philosophical Magazine. B6. 1121-1130 (1994)
[文献書誌] V.Veerasamy: "Photoresponse Characteristics of n-Type ta-C/P-Type c-Si Heterojunction Diodes" Applied Physics Letters. 64. 2279-2281 (1994)
[文献書誌] V.Veerasamy: "Electronic Density of States in Amorphous Diamond" Solid State Electronics. 37. 319-321 (1994)
[文献書誌] V.Veerasamy: "A Distributed Carbon Cathodic Vacuum Arc" Surface and Coatings Technology. 68/69. 301-308 (1994)
[文献書誌] V.Veerasamy: "Characteristics of n-Type ta-C/Silicon Heterojunctions" IEEE Transactions on Electron Devices. 42(in press). (1995)
[文献書誌] H.Zama: "Advances in Superconductvity VI28HD01:1994" Springer-Verlag.Tokyo, 921-924
[文献書誌] S.Yamamoto: "Advances in Superconductvity VII" Springer-Verlag,Tokyo(in press), (1995)

1994 年度 実績報告書

超薄膜超微細構造デバイスに関する研究

研究代表者

小田 俊理 東京工業大学, 工学部, 助教授 (50126314)

研究成果

[文献書誌] S.Oda: "Staircaselike Structures in In Situ Optical Reflectance Measurement as an Evidence for Two-Dimensional Crystal Growth in Layer-by-Layer Chemical Vapor Deposition." Applied Surface Science. 75. 259-262 (1994)

[文献書誌] S.Oda: "Atomic Layer-by-Layer Metalorganic Chimical Vapor Deposition of YBa2Cu30x Thin Films." Bulletins of Electrotechnical Laboratory. 58. 107-111 (1994)

[文献書誌] H.Zama: "High Quality YBaCuO Thin Film Growth by Low-Temperature Metalorganic Chemical Vapor Deposition Using Nitrous Oxide" Materials Research Society Symposium Proceedings. 335. 291-296 (1994)

[文献書誌] H.Zama: "Superconducting Properties of Ultrathin Films of YBaCuO Prepared by Metalorganic Chemical Vapor Deposition at 500℃" Japanese Journal of Applied Physics. 33. L312-L314 (1994)

[文献書誌] M.Otobe: "Selective Etching of Hydrogenated Amorphous Silicon by Hydrogen Plasma" Japanese Journal of Applied Physics. 33. 4442-4445 (1994)

[文献書誌] S.Oda: "Preparation of Nanocrystalline Silicon by Digital Chemical Vapor Deposition" Springer Series in Material Sciences,. 31. 248-253 (1994)

[文献書誌] S.Oda: "Preparation of Y-doped SrCuO2 Infinite Layer Films by MOCVD" Physica C. 235-240. 979-980 (1994)

[文献書誌] 小田俊理: "酸化物超伝導体の原子層MOCVD法における光学的その場成長モニター" 日本結晶成長学会誌. 21. S325-S332 (1994)

[文献書誌] S.Oda: "Atomic layer Controlled Metalorganic Chemical Vapor Deposition of Superconducting YBa2Cu30x Films" Journal of Crystal Growth. 145. 232-236 (1994)

[文献書誌] S.Oda: "Superconductivity and Surface Morphology of YBCO Thin Films Prepared by Metalorganic Chemical Vapor Deposition" IEEE Transactions of Applied Superconductivity. (in press). (1995)

[文献書誌] S.Oda: "Preparation of Nanocrystalline Silicon by Pulsed Plasma Processing" Materials Research Society Symposium Proceedings. 358(in press). (1995)

[文献書誌] M.Otobe: "Nanocrystalline Silicon Formed in Very-High-Frequency SiH4 Plasma" Proc.12th Symp.on Plasma Processing. (in press). (1995)

[文献書誌] T.Tsukui: "Computer Simulation and Measurement of Capacitance-Voltage Characteristics in Quantum Wire Devices of Trench-Oxide MOS Structure" Japanese Journal of Applied Physics. 34(in press). (1995)

[文献書誌] S.Imai: "Hydrogen Assisted ALE of Silicon" Applied Surface Science. 82/83. 322-326 (1994)

[文献書誌] S.Sugahara: "Atomic Layer Epitaxy of Germanium" Applied Surface Science. 82/83. 380-386 (1994)

[文献書誌] W.Gasser: "Quasi-Monolayer Deposition of Silicon Dioxide" Thin Solid films. 250. 213-218 (1994)

[文献書誌] H.Taniguchi: "Low-Temperature Chemical Vapor Deposition of Silicon Dioxide Using Tetra-Isocyanate-Silane." Japanese Journal of Applied Physics. 33. L1485-L1488 (1994)

[文献書誌] A.J.Pauza: "Josephson Junction in YBa_2Cu_3O_7-δ by Electron Beam Irradition" Physica B. 194-196. 119-122 (1994)

[文献書誌] D.F.Moore: "Nanostructure Fabrication and Vacuum Tunneling Devices" FED Journal. 4. 58-64 (1994)

[文献書誌] D.F.Moore: "High Tc Electronics at a Junction?" Physics World. 24-25 (1995)

[文献書誌] A.J.Pauza: "Electron Beam Damaged Junctions-Stability,Reproducibility,and Scaling Laws." IEEE Transactions on Applied Superconductivity. (in press). (1995)

[文献書誌] P.Morgen: "Thermally Stimulated Defect Removal in Hydrogenated Amorphous Silicon THin Film Transistors" 164-166(in press). (1994)

[文献書誌] C.Davis: "Properties of Tetrahedral Amorphous Diamond in a Filtered Vacuum Arc in the Presence of Hydrogen" Philosophical Magazine. B6. 1121-1130 (1994)

[文献書誌] V.Veerasamy: "Photoresponse Characteristics of n-Type ta-C/P-Type c-Si Heterojunction Diodes" Applied Physics Letters. 64. 2279-2281 (1994)

[文献書誌] V.Veerasamy: "Electronic Density of States in Amorphous Diamond" Solid State Electronics. 37. 319-321 (1994)

[文献書誌] V.Veerasamy: "A Distributed Carbon Cathodic Vacuum Arc" Surface and Coatings Technology. 68/69. 301-308 (1994)

[文献書誌] V.Veerasamy: "Characteristics of n-Type ta-C/Silicon Heterojunctions" IEEE Transactions on Electron Devices. 42(in press). (1995)

[文献書誌] H.Zama: "Advances in Superconductvity VI28HD01:1994" Springer-Verlag.Tokyo, 921-924

[文献書誌] S.Yamamoto: "Advances in Superconductvity VII" Springer-Verlag,Tokyo(in press), (1995)

1994 年度実績報告書

小田俊理東京工業大学, 工学部, 助教授 (50126314)