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[文献書誌] T.Soga: "Time-vesdved pho tduminescence characterization of GaAsand AlGaAs on Sisubstrate grown by MOCVD" Solar Energy Materials and Solar Cells. 35. 75-81 (1994)
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[文献書誌] M.Yang: "Three-terminal monolithic coscade GaAsls:soler cells" Solar Energy Materials and solar Cells. 35. 45-51 (1994)
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[文献書誌] H.Uchida: "Stress Relaxation of GaAs on Si by Laser Pulse Irradiation" Extended Abstracts of 1994 Int.Conf.on SSDM. 22-24 (1994)
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[文献書誌] M.Yang: "High efficiency GaAs/si monolithic three-terminal cascade solar cells by MOCVD" Jpn.J.Appl.phys.33. L712-L714 (1994)
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[文献書誌] M.Yang: "Al_×Ga_<Y-X>As(x=o-0.22)tandem solav cell grown by MOCVD" Jpn.J.APPl.Phys. 33. 6605-6610 (1994)
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[文献書誌] H.Uchida: "Reduction of Dislocation Density by Theronsl Annealing for GaAs/GaSb/Si Heterostructurc" J.Crystal Growth. (1995)
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[文献書誌] M.Umeno: "High efficiency AlGaAs/Si tandem solar cell ouev 20%" Proc.lst Walol Conf.on Photovoltaic Energy Convevsion. (1995)
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[文献書誌] M.Yang: "High efficieney GaAs/Si cascade solar cell with Al_<0.3>G_<0.7>As buffer layer" ibid. (1995)
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[文献書誌] T.Soga: "Implovement of AlGaAs solar cell grown on Si substrate" ibid. (1995)
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[文献書誌] K.Hayashi: "MOCVD glowth of GaAsP on Si for tandem solar cell application" ibid. (1995)