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[文献書誌] K. Saito, M. Matsuda, M. Yasutake, T. Hattori: "Electron Tunneling through Chemical Oxide of Silicon" Japanese Journal of Applied Physics. 34. L609-L611 (1995)
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[文献書誌] 服部健雄: "SiO2/Si界面形成の原子スケール制御" 応用物理. 64. 1085-1090 (1995)
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[文献書誌] T. Hattori: "Chemical Structures of the SiO2/Si Interface" Critical Reviews in Solid State and Materials Sciences. 20. 339-382 (1995)
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[文献書誌] T. Hattori, K. Watanabe, M. Ohashi, M. Matsuda, M. Yasutake: "Electron Tunneling through Chemical Oxide of Silicon" to be published in Applied Surface Science. (1996)
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[文献書誌] H. Nohira, H. Sekikawa, T. Hattori: "Effect of Preoxides on Structures of SiO2 and SiO2/Si Interfaces" to be published in Applied Surface Science. (1996)
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[文献書誌] T. Hattori, T. Aiba, E. Iijima, Y. Okube, H. Nohira, N. Tate, M. Katayama: "Initial Stage of Oxidation of Hydrogen Terminted Silicon Surfaces" to be published in Applied Surface Science. (1996)