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[文献書誌] 原: "Alloyed Schottky Barrier in GaAs MESFETs: TiAs/Ti_2Ga_3 Double layer" 354-367 (1995)
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[文献書誌] 原: "Arsenic Ion Implantation into SIMOX Layers" Appl. Phys. Lett.
-
[文献書誌] 原: "Stress Reduction in Al-Sc Interconnection Layers by Superplastic Deformation" J of Electrochemical Soc.
-
[文献書誌] 原: "Grain Boundary Orientation in Al-Si-Cu Interconnection Measurement of the Tilt from the(III)Plane"
-
[文献書誌] 原: "Formation of Ti_2N Layer Tilting of the(III)Al plane in Al-1.0%Si-0.5%Cu Interconnection Layers" J. Electronchem. Soc.
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[文献書誌] 溝口: "Raman Image Study of Flash-Lamp Annealing of Ion-Implanted Silicon" J of Appl. Phys. 77(7). 3388-3392 (1995)
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[文献書誌] 原: "Al-Si-Cu配線膜の(III)面からの傾きとこれに影響を与えるCu高濃度層" 電子情報通信学会論文誌. 305-310 (1995)
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[文献書誌] 原: "Stress Measurement in Al-Si-Cu interconnection Layers" J of Electrochemical Soc. 142. 1946-1950 (1995)
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[文献書誌] 原: "Thermal Stability in Al/Ti/GaAs Schottky Barrier" Japan J. Appl. Phys. 34. 800-802 (1995)
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[文献書誌] 原: "Carbon Ion Implantation in GaAs" Japan. J. of Appl. Phys. 34. 1021-1024 (1995)
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[文献書誌] 高松: "Characteristics of Photoacoustic Displacement for Silicon Damaged by Ion implantation" J. Appl. Phys. 78(3). (1995)