単電子ナノエレクトロニクスの基礎

1995 年度 実績報告書

• 研究課題/領域番号: 07355001
• 研究機関: 北海道大学
• 研究代表者: 長谷川 英機 北海道大学, 工学部, 教授 (60001781)
• 研究分担者: 川辺 光央 筑波大学, 物質工学系, 教授 (80029446) ; 榊 裕之 東京大学, 先端科学技術研究センター, 教授 (90013226) ; 澤木 宣彦 名古屋大学, 工学部, 教授 (70023330) ; 川村 清 慶應義塾大学, 理工学部, 教授 (00011619) ; 菅野 卓雄 東洋大学, 工学部, 教授 (50010707)
• キーワード: 単電子デバイス / 単電子トランジスタ / クーロンブロッケード / 集積回路 / 量子現象 / ナノ構造 / トンネル現象

研究概要

本総合研究(B)は、平成8年度発足の重点領域研究「単電子デバイスとその高密度集積化」の基礎的準備を行うものとして採用されたが、重点領域研究の発足が決定されたため、それに向けての準備として、研究テーマの検討と問題点の調査・整理を行った。
活動内容として、幹事会を2回、研究会を2回開催した。幹事会では、総括班の組織と研究の運営形態、計画研究と公募研究との相互関係の検討を行った。研究会では、単電子デバイスおよびその高密度集積化に関する研究について活発な研究調査・研究討論を行った。研究会での主要な点は、以下の通りである。
(1)次の4つの主要研究項目について、各研究者の研究成果や予備調査の結果の報告を受け、十分な討論を行った。
(a)単電子輸送と単電子ナノ構造形成の物性論的基礎
(b)ナノ構造の表面・界面の制御と単電子トンネル障壁の最適化
(c)単電子デバイスの創出とその回路・アーキテクチャの検討
(d)単電子デバイスの高密度集積化のための新技術の開拓
(2)計画研究では、目的が散漫にならないように、単電子デバイスとその高度集積化に目的を限定した具体的な研究計画の設定・発表を求め、相互に討論を行った。

研究成果

• [文献書誌] M.Eto: "Quantum Size Effect on Optical Abosorption in a Small Spherical Shell.," Phys.Rev.B51. 10119-10126 (1995)
• [文献書誌] S.Niwa,: "Picosecond Photoluminescence Study of Relaxation Phenomena of Hot-Electrons in a Quasi-One-Dimensional Structures.," Jap.J.Appl.Phys.34. 4515-4518 (1995)
• [文献書誌] T.Hanajiri: "Single Electron Device with Asymmetric Tunnel Barriers.," Jpn.J.Appl.Phys.35. 655-660 (1996)
• [文献書誌] H.Sakaki,: "Transport properties of two-dimensional electoron gas in AlGaAs/GaAs selectively doped heterojunctions with embedded InAs quantum dots.," Appl.Phys.Lett.,. 67. 4390-4391 (1995)
• [文献書誌] M.Kaneko,: "A Molecular Beam Approach to Quantum Dot Arrays.," Jpn.J.Appl.Phys.,. 370-376 (1995)
• [文献書誌] M.Kawabe: "Selective growth and other applications of hydrogen-assisted molecular beam epitaxy." J.Cryst.Growth 150. 370-376 (1995)
• [文献書誌] K.Kumakura: "Novel Formation Method of Quantum Dot Structures by Self-Limited Selective Area Metalorganic Vapor Phase Epitaxy.," Jpn.J.Appl.Phys.34. 4387-4389 (1995)
• [文献書誌] S.Hara: "Quantum Well Wire Fabrication Method Using Self-Organized Multiatomic Steps on Vicinal(001)GaAs Surfaces by Metalorganic Vapor Phase Epitaxy." Jpn.J.Appl.Phys.34. 4401-4404 (1995)
• [文献書誌] S.Kodama: "Photoluminescence and X-ray Photoelectron Study of AlGaAs/GaAs Near-Surface Quantum Wells by a Novel Interface Control Technique.," Jpn.J.Appl.Phys.34. 4540-4543 (1995)
• [文献書誌] H.Hasegawa: "Fabrication and characterization of quantum wire transistors with Schottky in-plane gates formed by an in situ electrochemical process.," J.Vac.Sci.& Technol.B,. 13. 1744-1750 (1995)
• [文献書誌] S.Kodama: "Silicon Interlayer Based Surface Passivation of Near-Surface Quantum Wells.," J.Vac.Sci.& Technol.B,. 13. 1794-1800 (1995)
• [文献書誌] T.Fukui,: "Multiatomic Step Formation Mechanism of Metalorganic Vapor Phase Epitaxy Grown GaAs Vicinal Surfaces and Its Application to Quantum Well Wires." J.Cryst.Growth. 146. 183-187 (1995)
• [文献書誌] J.Motohisa: "Fabrication of GaAs/AlGaAs Quantum Dots by Metalorganic Vapor Phase Epitaxy on Patterned GaAs Substrates.," Jpn.J.Appl.Phys.34. 1098-1101 (1995)
• [文献書誌] S.Kodama: "Novel Surface Passivation Scheme for Compound Semiconductor Using Silicon Interface Control Layer and Its Application to Near-Surface Quantum Wells." Jpn.J.Appl.Phys.34. 1143-1148 (1995)
• [文献書誌] T.Hashizume: "Depletion Characteristics of Direct Schottky Contacts to Quantum Wells Formed by in Situ Selective Electrochemical Process.," Jpn.J.Appl.Phys.34. 1149-1152 (1995)
• [文献書誌] H.Okada: "Novel Wire Transistor Structure with In-Plane-Gate Using Direct Schottky Contacts to 2DEG.," Jpn.J.Appl.Phys.34. 1315-1319 (1995)
• [文献書誌] H.Hasegawa: "More than 10^3 Times Photoluminescence Intensity Recovery by Silicon Interface-Control-Layer-Based Surface Passivation of Near-Surface Quantum Wells." Jpn.J.Appl.Phys.34. L495-L498 (1995)
• [文献書誌] T.Hashizume: "Observation of Conductance Quantization in A Novel Schottky In-Plane Gate Wire Transistor Fabricated by Low-Damage In Situ Electrochemical Process." Jpn.J.Appl.Phys.34. L635-L638 (1995)
• [文献書誌] T.Saitoh: "Determination of Interface State Density Distribution and Surface Recombination Velocity on Passivated Semiconductor Surfaces by Photoluminescence Surface State Spectroscopy.," Materials Science Forum,. 185-188. 53-58 (1995)
• [文献書誌] H.Fujikura: "Fabrication of InP-based InGaAs ridge quantum wires utilizing selective motecular beam epitaxial growth on (311)A facets.," J.Electron.Mater.December. (1996)
• [文献書誌] S.Suzuki: "A Novel Insulated Gate Technology for InGaAs High Electron Mobility Transistors Using Silicon Interlayer Based Passivation Technique.," J.Electron.Mater.December. (1996)
• [文献書誌] B.X.Yang: "Properties of InAs_xP_<x-1> Layer Formed by P-As Exchange Reaction on(001)InP Surface Exposed to As,Beam.," J.Electron.Mater.December. (1996)
• [文献書誌] S.Kasai: "Fabrication and Characterization of Novel Lateral Surface Superlattice Structure Utilizing Schottky Barrier Height Conyrol by Doped Siricon Interface Control Layers.," Jpn.J.Appl.Phys.35. 617-624 (1996)
• [文献書誌] S.Koyanagi: "Contactless Characterization of Thermally Oxidized,Air-Exposed and Hydrogen-Terminated Silicon Surfaces by Capacitance-Voltage and Photoluminesence Methods.," Jpn.J.Appl.Phys.35. 630-637 (1996)
• [文献書誌] T.Saitoh: "In-Situ Photoluminescence and Capacitance-Voltage Characterization of InAlAs/InGaAs Regrown Heterointerfaces by Molecular Beam Epitaxy.," J.Cryst.Growth. 150. 96-100 (1995)
• [文献書誌] H.Fujikura: "Fabrication of InGaAs Ridge Quantum Wires by Selective Molecular Beam Epitaxy and their Characterization.," J.Cryst.Growth. 150. 327-331 (1995)
• [文献書誌] T.Ozeki: "A New Method of Flux Calibration for Gas Source Molecular Beam Epitaxy of InP and Its Application to Migration Enhanced Epitaxy.," J.Cryst.Growth. 150. 602-606 (1995)
• [文献書誌] S.Suzuki: "A Novel Passivation Technology of InGaAs Surfaces Using Si Interface Control Layer and Its Application to Field Effect Transistor.," Solid State Electron.38. 1679-1683 (1995)
• [文献書誌] S.Shiobara: "Surface Electrical Breakdown Characteristics of Molecular Beam Epitaxial Layers Grown at Low Temperatures.," Solid State Electron.38. 1685-1690 (1995)
• [文献書誌] H.Hasegawa: "Passivation and Control of Semiconductor Interfaces by Interface Control Layers.," Materials Science Forum. 185-188. 23-36 (1995)
• [文献書誌] K.Jinushi,: "Novel GaAs-Based Single-Electron Transistors with Schottky In-Plane Gates Operating up to 20 K" Jap.J.Appl.Phys.35. 397-404 (1996)
• [文献書誌] S.Uno,: "0.86eV Platinum Schottky Barrier on Indium Phosphide by In Situ Electrochemical Process and Its Application to MESFETs.," Jpn.J.Appl.Phys.35. 751-756 (1996)
• [文献書誌] H.Fujikura,: "Surface Passivation of In_<0.53>Ga_<0.47>As Ridge Quantum Wires Using Silicon Interface Control Layers.," J.Vac.Sci.Technol.,. 14. (1996)
• [文献書誌] B.X.Yang,: "Scanning Tunneling Microscope Study of(001)InP Surface Prepared by Gas Sourae Molecular Beam Epitaxy:" Jpn.J.Appl.Phys.,. 35. 741-746 (1996)
• [文献書誌] 長谷川 英機: "InP系化合物半導体材料およびデバイスの新展開" 応用物理. 65. 108-118 (1996)
• [文献書誌] H.Hasegawa: "Metal-Semiconductor Interfaces" Ohmsha, 399 (1995)