1998 年度実績報告書

ナノ構造の表面・界面の制御と単電子トンネル障壁の最適化

研究課題

研究課題/領域番号	08247101
研究種目	特定領域研究(A)
研究機関	北海道大学
研究代表者	長谷川英機北海道大学, 工学研究科, 教授 (60001781)
研究分担者	菅野卓雄東洋大学, 工学部, 教授 (50010707) 安田幸夫名古屋大学, 工学研究科, 教授 (60126951) 澤木宣彦名古屋大学, 工学研究科, 教授 (70023330) 小間篤東京大学, 理学系研究科, 教授 (00010950) 岩見基弘岡山大学, 理学部, 教授 (80029123)
キーワード	単電子デバイス / ナノ構造 / 表面・界面 / トンネル障壁 / 量子ドット / 原子スケール制御
研究概要	本研究は、平成8〜11年度にわたり設定された特定領域研究(A)「電子デバイスとその高度集積化の計画研究として、その主要研究項目(A02)「ナノ構造の表面・界面の制御と単電子トンネル障壁の最適化」を担当するものである。本年度における主要な成果を以下にまとめる。 1) ショットキーラップゲートを利用した3ゲート単電子トランジスタを作製し、電圧利得1以上を実現した。また、インプレーンゲート量子細線トランジスタとナノ金属ドットアレーを組み合わせた新しい単電子メモリー素子を提案し、帯電特性の理論的検討と作製プロセスの開発を行った。 2) 超高真空中での熱処理によって、六方晶SiCのSi面およびC面の表面構造を明らかにした。また、六方晶SiC表面にNiを堆積し、600-800℃の超高真空熱処理で、Ni_2Si微粒子の形成に成功した。 3) GaSc,InScなどの層状薄膜上に選択的にC_<60>微粒子を堆積させることに成功した。さらに、水素終端Si上にGaScをファンデアワールスエピタキシー法で成長してチャネルとし、リソグラフィーでGaSeの一部を窓あけし、選択的にC_<60>微粒子を堆積する単電子素子作製プロセスを開発した。 4) シュレジンガー方程式を数値的に解く手法で、ドット構造における電子波のモード形成と不純物散乱の関係を詳細に調べた。また、結合量子井戸中における電子のエネルギー緩和過程をフェムト秒時間分解フォトレフレクタンス法で調べ、LOフォノンを放出する緩和過程、トンネル効果による電子散逸過程等の存在を見いだした 5) SiMOS構造を基本とし、集束Gaイオンビームを利用して3端子素子を作製した。ホッピング伝導に起因するクーロン振動を観測し、クーロンダイアモンド特性より、トンネル障壁幅として14-17nmの値が得られた。 6) Al/Al_2O_3/Al構造の超伝導素子を作製し、単電子デバイスのための基本特性の測定を行った。また、リセス部分にドレイン・ソースを形成したSi単電子デバイスを試作し、室温におけるFET動作を確認した。 7) シランガスパルスプラズマCVD法とEBリソグラフィーを組み合わせて、シリコン微粒子を含む単電子デバイスを作製し、明確なクーロン振動、クーロンブロッケード現象を観測した。また、単電子メモリ効果についても確認した。

研究成果

(51件)

すべてその他

すべて文献書誌 (51件)

[文献書誌] H.Hasegawa: "Electrochemical formation and characterization of Schottky in-plane and wrap gate structures for realization of GaAs-and InP-based quantum wires and dots" Applied Surface Science. 123/124. 335 (1998)
[文献書誌] T.Hashizume: "Surface passivation of GaAs with ultrathin Si_3Ni_4/Si interface control layer formed by MBE and in situ ECR plasma nitridation" Applied Surface Science. 123/124. 599 (1998)
[文献書誌] H.Takahashi: "Novel InP metal-insulator-semiconductor structure having an ultrathin silicon interface control layer"" Applied Surface Science. 123/124. 615 (1998)
[文献書誌] B.Adamowicz: "Photoluminescence characterization of air exposed AlGaAs surface and passivated ex situ by ultrathin silicon interface control layer" PhysicaE. 2. 261 (1998)
[文献書誌] N.Tsurumi: "In-Situ Tunneling Microscope Study of Formation Process of Ultrathin Si Layer by Molecular Beam Epitaxy on GaAs (001)-(2x4) Surface" Japanese Journal of Applied Physics. 37. 1501 (1998)
[文献書誌] Y.Sato: "Computer Simulation and Experimental Characterization of Single Electron Transistors Based on Schottky Wrap Gate Control of 2DEG" Japanese Journal of Applied Physics. 37. 1584 (1998)
[文献書誌] H.Fujikura: "Controlled Formation of Narrow and Uniform InP-Based In_<0.53>Ga_<0.47>As Ridge Quantum Wire Arrays by Selective Molecular Beam Epitaxy" Japanese Journal of Applied Physics. 37. 1532 (1998)
[文献書誌] T.Hashizume: "In-Situ Contactless Characterization of Microscopic and Macroscopic Properties of Si-doped MBE-Grown (2x4) GaAs Surface" Japananese Journal of Applied Physics. 37. 1626 (1998)
[文献書誌] B.Adamowicz: "Computer Analysis of Surface Recombination Process at Si and Compound Semiconductor Surface and Behavior of Surface Recombination Velocity" Japanese Journal of Applied Physics. 37. 1631 (1998)
[文献書誌] Y.Hanada: "Direct Formation of InGaAs Coupled Quantum Wire-Dot Structured by Selective Molecular Beam Expitaxy on InP Patterned Substrates" Solid State Electronics. 42. 1413 (1998)
[文献書誌] H.Okada: "A Novel Wrap-Gate-Controlled Single Electron Transistor Formed on an InGaAs Ridge Quantum Wire Grown by Selective MBE" Solid State Electronics. 42. 1419 (1998)
[文献書誌] S.Chkraborty: "Formation of ultrathin oxynitride layers on Si (100) by low-temperature electron cyclotron resonance N_2O plasma oxynitridation process" Journal of Vacuum Science and Technology. B16. 2159 (1998)
[文献書誌] Y.Ishikawa: "Scanning tunneling microscopy and x-ray photoelectron spectroscopy studies of atomic level structure and Fermi level pinning on GaAs (110) surfaces grown by molecular beam epitaxy" Journal of Vacuum Science and Technology. B16. 2387 (1998)
[文献書誌] Y.Sato: "Voltage Gain in GaAs-Based Lateral Single-Electron Transistors Having Three Schottky Wrap Wrap Gates" Japanese Journal of Applied Physics. 38(in press). (1999)
[文献書誌] H.Fujikawa: "Control of Dot Size and Tunneling Barrier Profile in In_<0.53>Ga_<0.47>As Coupled Quantum Wire-Dot Structures Grown by Selective Molecular Beam Epitaxy on Patterned InP Substrates" Japanese Journal of Applied Physics. 38(in press). (1999)
[文献書誌] T.Muranaka: "Size-Controlled Formation of Decananometer InGaAs Quantum Wires by Selective Molecular Beam Epitaxy on InP Patterned Substrates" Japanese Journal of Applied Physics. 38(in press). (1999)
[文献書誌] H.Fujikura: "Extra-Side-Facet Control in Selective Molecular Beam Epitaxial Growth of InGaAs Ridge Quantum Wires for Improvement of Wire Uniformity" Japanese Journal of Applied Physics. 38(in press). (1999)
[文献書誌] M.B.Takeyama: "Interfacial Reaction and Electrical Properties in the Sputter-Deposited Al/Ti Ohmic Contact to n-InP" Japanese Journal of Applied Physics. 38(in press). (1999)
[文献書誌] T.Sato: "Strong Correlation Between Interface Microstructure and Barrier Height in n-InP Schottky Contacts Formed by In Situ Electrochemical Process" Japanese Journal of Applied Physics. 38(in press). (1999)
[文献書誌] C.Kaneshiro: "Electrochemical Etching of Indium Phosphide Surfaces Studied by Voltammetry and Scanned Probe Microscopes" Japanese Journal of Applied Physics. 38(in press). (1999)
[文献書誌] H.Takahashi: "XPS and UHV Contactless C-V Characterization of Novel Oxide-Free InP Passivation Process Using Silicon Surface Quantum Well" Japanese Journal of Applied Physics. 38(in press). (1999)
[文献書誌] H.Fujikura: "Formation of Highly Uniform InGsAs Ridge Quantum Wire by Selective Molecular Beam Epitaxy on Novel InP Patterned Substrates" Thin Solid Film. (in press). (1999)
[文献書誌] H.Fujikura: "Selective MBE Growth of Quantum Wire-Dot Coupled Structures with Novel High Index Facets for InGaAs Single Electron Transistor Arrays" Microelectronics. (in press). (1999)
[文献書誌] J.Nakamura: "Transport Properties of Schottky In-Plane-Gate GaAs Single and Coupled Quantum Wire Transistors" IOP conference series. (in press). (1999)
[文献書誌] N.Ono: "N.Ono. H.Fujikura and H.Hasegawa : “Study of Selective MBE Growth on Patterned (001) InP Substrates Toward Realization of <100>-Oriented InGaAs Ridge Quantum Wires" IOP conference series. (in press). (1999)
[文献書誌] C.Kaneshiro: "Realization of Strongly Metal-Dependent Schottky Barrier Heights on n-GaAs by In Situ Electrochemical Process" IOP conference series. (in press). (1999)
[文献書誌] T.Muranaka: "Realization of InP-Based InGaAs Single Electron Transistors on Wires and Dots Grown by Selective MBE" Microelectronic Engineering. (in press). (1999)
[文献書誌] H.Okada: "GaAs-Based Single Electron Logic and Memory Devices Using Electro-Deposited Nanometer Schottky Gates" Microelectronic Engineering. (in press). (1999)
[文献書誌] H.Sai: "Growth of Device Quality InGaP/GaAs Heterostructures by Gas Source Molecular Beam Epitaxy using Tertiarybutylphosphine" Solid State Electronics. (in press). (1999)
[文献書誌] H.Sai: "Study of Reflection Highly-Energy Electron Diffraction Oscillation for Optimization of Tertiarybutylphosphine-Based Molecular Beam Epitaxial Growth of In_<0.48>Ga_<0.52>P on GaAs" Japanese Journal of Applied Physics. 38(in press). (1999)
[文献書誌] H.Sai: "H.Sai, H.Fujikura and Hasegawa : “Gas Source Molecular Beam Epitaxial Growth of In_<1-x>Ga_xP on GaAs Using Tertiarybutylphosphine" Japanese Journal of Applied Physics. 38(in press). (1999)
[文献書誌] H.Hasegawa: "Properties of Metal-Semiconductor Interfaces Formed on n-type GaN" Japanese Journal of Applied Physics. 38(in press). (1999)
[文献書誌] T.Sato: "Formation of Size- and Position-Controlled Nanometer Size Pt Dots on GaAsand InP Substrates by Pulsed electrochemical Depositionc" Japanese Journal of Applied Physics. 38(in press). (1999)
[文献書誌] T.Yoshida: "A Novel Non-Destructive Characterization Method of Electronic Properties of Pre- and Post-Prosessing Silicon Surfaces Based on Ultrahigh-Vacuum Contactless Capacitance-Voltage Measurements" Japanese Journal of Applied Physics. 38(in press). (1999)
[文献書誌] M.Mutoh: "Effects of Initial Surface Reconstruction on Silicon Interface Control Layer Based Passivation of (001) GaAs Surfaces Studied in an Ultrahigh-Vacuum Multichamber System" Japanese Journal of Applied Physics. 38(in press). (1999)
[文献書誌] H.Takahashi: "In-Situ Characterization Technique of Compound Semiconductor Heterostructure Growth and Device Processing Steps Based on UHV Contactless Capacitance-Voltage Measurement" Solid-State Electron.(in press). (1999)
[文献書誌] Y.Koyama: "Formation Processes and Properties of Schottky and Ohmic Contacts on n-type GaN form Field Effect Transistor Applications" Solid-State Electron.(in press). (1999)
[文献書誌] A.Hamamatsu: "Formation of <001>-Aligned Nano-Scale Pores on (001)n-InP Surfaces by Photoelectrochemical Anodization in HCl" Journal of Electroanalytical Chemistry. (in press). (1999)
[文献書誌] J.L.Wang: "Mn (thin-film)/Si(substrate) conacts : Analysis of the buried interface by sofy X-ray emission spectroscopy" Japanese Journal of Applied Physics. 38. 198 (1999)
[文献書誌] K.Ueno: "A novel method to fabricate a molecular quantum structure : Selective growth of C60 on layered metarial heterostructures" Japanese Journal of Applied Physics. 38. 511 (1999)
[文献書誌] N.Sawaki: "Electron tunneling time into a quantum disk" Microelectronic Engineering. (in press). (1999)
[文献書誌] H.Kondo: "Conductance oscillations in low-dimensional ion implanted regions annealead by rapid thermal annealing" Japanese Journal of Applied Physics. 38(in press). (1999)
[文献書誌] S.Nomura: "Enhancement of photoluminescence near Fermi level in bias voltage controlled quantum dot array" Solid-State Communications. 106. 815 (1998)
[文献書誌] M.Otobe: "Observation of single electron charging effect in nanocrystalline silicon at room temperature using atomic force microscopy" Applied Physics Letters. 72. 1089 (1998)
[文献書誌] B.Ullrich: "Optical and Hybrid the Propertiesof the ZnSe/InSe Heterojunctions" Solid State Commun.107. 209 (1998)
[文献書誌] T.Loher: "Van der Waals Type Buffer Layers : Epitaxial Growth of the Large Lattice Mismatch System CdS/InSe/H-Si (100)" Appl.Sur.Sci.130-132. 334 (1998)
[文献書誌] Y.Kawaguchi: "Selective area growth of GaN on Si substrates using SiO2 mask by MOVPE" Japanese Journal of Applied Physics. 37. L966 (1998)
[文献書誌] M.Ishida: "Computer simulation of tunneling transfer and formation of resonant states in a GaAs/AlGaAs 2DEG disk" Japanese Journal of Applied Physics. 38(in press). (1999)
[文献書誌] H.Iwano: "Hopping conduction and localized states in p-Si wires formed by focused ion beam implantations" Journal of Vacuum Science & Technology B. 16. 2558 (1998)
[文献書誌] J.P.Bird: "Intrinsic stable orbits in open quantum dots" Semicond.Sci.Technol.13. A4 (1998)
[文献書誌] K.Ishibashi: "Characterization of SET electrometer coupled to the quantum dot in GaAs/AlGaAs 2DEG" Microelectronics Engineering. (in press). (1999)

1998 年度 実績報告書

ナノ構造の表面・界面の制御と単電子トンネル障壁の最適化

研究代表者

長谷川 英機 北海道大学, 工学研究科, 教授 (60001781)

研究成果

[文献書誌] H.Hasegawa: "Electrochemical formation and characterization of Schottky in-plane and wrap gate structures for realization of GaAs-and InP-based quantum wires and dots" Applied Surface Science. 123/124. 335 (1998)

[文献書誌] T.Hashizume: "Surface passivation of GaAs with ultrathin Si_3Ni_4/Si interface control layer formed by MBE and in situ ECR plasma nitridation" Applied Surface Science. 123/124. 599 (1998)

[文献書誌] H.Takahashi: "Novel InP metal-insulator-semiconductor structure having an ultrathin silicon interface control layer"" Applied Surface Science. 123/124. 615 (1998)

[文献書誌] B.Adamowicz: "Photoluminescence characterization of air exposed AlGaAs surface and passivated ex situ by ultrathin silicon interface control layer" PhysicaE. 2. 261 (1998)

[文献書誌] N.Tsurumi: "In-Situ Tunneling Microscope Study of Formation Process of Ultrathin Si Layer by Molecular Beam Epitaxy on GaAs (001)-(2x4) Surface" Japanese Journal of Applied Physics. 37. 1501 (1998)

[文献書誌] Y.Sato: "Computer Simulation and Experimental Characterization of Single Electron Transistors Based on Schottky Wrap Gate Control of 2DEG" Japanese Journal of Applied Physics. 37. 1584 (1998)

[文献書誌] H.Fujikura: "Controlled Formation of Narrow and Uniform InP-Based In_<0.53>Ga_<0.47>As Ridge Quantum Wire Arrays by Selective Molecular Beam Epitaxy" Japanese Journal of Applied Physics. 37. 1532 (1998)

[文献書誌] T.Hashizume: "In-Situ Contactless Characterization of Microscopic and Macroscopic Properties of Si-doped MBE-Grown (2x4) GaAs Surface" Japananese Journal of Applied Physics. 37. 1626 (1998)

[文献書誌] B.Adamowicz: "Computer Analysis of Surface Recombination Process at Si and Compound Semiconductor Surface and Behavior of Surface Recombination Velocity" Japanese Journal of Applied Physics. 37. 1631 (1998)

[文献書誌] Y.Hanada: "Direct Formation of InGaAs Coupled Quantum Wire-Dot Structured by Selective Molecular Beam Expitaxy on InP Patterned Substrates" Solid State Electronics. 42. 1413 (1998)

[文献書誌] H.Okada: "A Novel Wrap-Gate-Controlled Single Electron Transistor Formed on an InGaAs Ridge Quantum Wire Grown by Selective MBE" Solid State Electronics. 42. 1419 (1998)

[文献書誌] S.Chkraborty: "Formation of ultrathin oxynitride layers on Si (100) by low-temperature electron cyclotron resonance N_2O plasma oxynitridation process" Journal of Vacuum Science and Technology. B16. 2159 (1998)

[文献書誌] Y.Ishikawa: "Scanning tunneling microscopy and x-ray photoelectron spectroscopy studies of atomic level structure and Fermi level pinning on GaAs (110) surfaces grown by molecular beam epitaxy" Journal of Vacuum Science and Technology. B16. 2387 (1998)

[文献書誌] Y.Sato: "Voltage Gain in GaAs-Based Lateral Single-Electron Transistors Having Three Schottky Wrap Wrap Gates" Japanese Journal of Applied Physics. 38(in press). (1999)

[文献書誌] H.Fujikawa: "Control of Dot Size and Tunneling Barrier Profile in In_<0.53>Ga_<0.47>As Coupled Quantum Wire-Dot Structures Grown by Selective Molecular Beam Epitaxy on Patterned InP Substrates" Japanese Journal of Applied Physics. 38(in press). (1999)

[文献書誌] T.Muranaka: "Size-Controlled Formation of Decananometer InGaAs Quantum Wires by Selective Molecular Beam Epitaxy on InP Patterned Substrates" Japanese Journal of Applied Physics. 38(in press). (1999)

[文献書誌] H.Fujikura: "Extra-Side-Facet Control in Selective Molecular Beam Epitaxial Growth of InGaAs Ridge Quantum Wires for Improvement of Wire Uniformity" Japanese Journal of Applied Physics. 38(in press). (1999)

[文献書誌] M.B.Takeyama: "Interfacial Reaction and Electrical Properties in the Sputter-Deposited Al/Ti Ohmic Contact to n-InP" Japanese Journal of Applied Physics. 38(in press). (1999)

[文献書誌] T.Sato: "Strong Correlation Between Interface Microstructure and Barrier Height in n-InP Schottky Contacts Formed by In Situ Electrochemical Process" Japanese Journal of Applied Physics. 38(in press). (1999)

[文献書誌] C.Kaneshiro: "Electrochemical Etching of Indium Phosphide Surfaces Studied by Voltammetry and Scanned Probe Microscopes" Japanese Journal of Applied Physics. 38(in press). (1999)

[文献書誌] H.Takahashi: "XPS and UHV Contactless C-V Characterization of Novel Oxide-Free InP Passivation Process Using Silicon Surface Quantum Well" Japanese Journal of Applied Physics. 38(in press). (1999)

[文献書誌] H.Fujikura: "Formation of Highly Uniform InGsAs Ridge Quantum Wire by Selective Molecular Beam Epitaxy on Novel InP Patterned Substrates" Thin Solid Film. (in press). (1999)

[文献書誌] H.Fujikura: "Selective MBE Growth of Quantum Wire-Dot Coupled Structures with Novel High Index Facets for InGaAs Single Electron Transistor Arrays" Microelectronics. (in press). (1999)

[文献書誌] J.Nakamura: "Transport Properties of Schottky In-Plane-Gate GaAs Single and Coupled Quantum Wire Transistors" IOP conference series. (in press). (1999)

[文献書誌] N.Ono: "N.Ono. H.Fujikura and H.Hasegawa : “Study of Selective MBE Growth on Patterned (001) InP Substrates Toward Realization of <100>-Oriented InGaAs Ridge Quantum Wires" IOP conference series. (in press). (1999)

[文献書誌] C.Kaneshiro: "Realization of Strongly Metal-Dependent Schottky Barrier Heights on n-GaAs by In Situ Electrochemical Process" IOP conference series. (in press). (1999)

[文献書誌] T.Muranaka: "Realization of InP-Based InGaAs Single Electron Transistors on Wires and Dots Grown by Selective MBE" Microelectronic Engineering. (in press). (1999)

[文献書誌] H.Okada: "GaAs-Based Single Electron Logic and Memory Devices Using Electro-Deposited Nanometer Schottky Gates" Microelectronic Engineering. (in press). (1999)

[文献書誌] H.Sai: "Growth of Device Quality InGaP/GaAs Heterostructures by Gas Source Molecular Beam Epitaxy using Tertiarybutylphosphine" Solid State Electronics. (in press). (1999)

[文献書誌] H.Sai: "Study of Reflection Highly-Energy Electron Diffraction Oscillation for Optimization of Tertiarybutylphosphine-Based Molecular Beam Epitaxial Growth of In_<0.48>Ga_<0.52>P on GaAs" Japanese Journal of Applied Physics. 38(in press). (1999)

[文献書誌] H.Sai: "H.Sai, H.Fujikura and Hasegawa : “Gas Source Molecular Beam Epitaxial Growth of In_<1-x>Ga_xP on GaAs Using Tertiarybutylphosphine" Japanese Journal of Applied Physics. 38(in press). (1999)

[文献書誌] H.Hasegawa: "Properties of Metal-Semiconductor Interfaces Formed on n-type GaN" Japanese Journal of Applied Physics. 38(in press). (1999)

[文献書誌] T.Sato: "Formation of Size- and Position-Controlled Nanometer Size Pt Dots on GaAsand InP Substrates by Pulsed electrochemical Depositionc" Japanese Journal of Applied Physics. 38(in press). (1999)

[文献書誌] T.Yoshida: "A Novel Non-Destructive Characterization Method of Electronic Properties of Pre- and Post-Prosessing Silicon Surfaces Based on Ultrahigh-Vacuum Contactless Capacitance-Voltage Measurements" Japanese Journal of Applied Physics. 38(in press). (1999)

[文献書誌] M.Mutoh: "Effects of Initial Surface Reconstruction on Silicon Interface Control Layer Based Passivation of (001) GaAs Surfaces Studied in an Ultrahigh-Vacuum Multichamber System" Japanese Journal of Applied Physics. 38(in press). (1999)

[文献書誌] H.Takahashi: "In-Situ Characterization Technique of Compound Semiconductor Heterostructure Growth and Device Processing Steps Based on UHV Contactless Capacitance-Voltage Measurement" Solid-State Electron.(in press). (1999)

[文献書誌] Y.Koyama: "Formation Processes and Properties of Schottky and Ohmic Contacts on n-type GaN form Field Effect Transistor Applications" Solid-State Electron.(in press). (1999)

[文献書誌] A.Hamamatsu: "Formation of <001>-Aligned Nano-Scale Pores on (001)n-InP Surfaces by Photoelectrochemical Anodization in HCl" Journal of Electroanalytical Chemistry. (in press). (1999)

[文献書誌] J.L.Wang: "Mn (thin-film)/Si(substrate) conacts : Analysis of the buried interface by sofy X-ray emission spectroscopy" Japanese Journal of Applied Physics. 38. 198 (1999)

[文献書誌] K.Ueno: "A novel method to fabricate a molecular quantum structure : Selective growth of C60 on layered metarial heterostructures" Japanese Journal of Applied Physics. 38. 511 (1999)

[文献書誌] N.Sawaki: "Electron tunneling time into a quantum disk" Microelectronic Engineering. (in press). (1999)

[文献書誌] H.Kondo: "Conductance oscillations in low-dimensional ion implanted regions annealead by rapid thermal annealing" Japanese Journal of Applied Physics. 38(in press). (1999)

[文献書誌] S.Nomura: "Enhancement of photoluminescence near Fermi level in bias voltage controlled quantum dot array" Solid-State Communications. 106. 815 (1998)

[文献書誌] M.Otobe: "Observation of single electron charging effect in nanocrystalline silicon at room temperature using atomic force microscopy" Applied Physics Letters. 72. 1089 (1998)

[文献書誌] B.Ullrich: "Optical and Hybrid the Propertiesof the ZnSe/InSe Heterojunctions" Solid State Commun.107. 209 (1998)

[文献書誌] T.Loher: "Van der Waals Type Buffer Layers : Epitaxial Growth of the Large Lattice Mismatch System CdS/InSe/H-Si (100)" Appl.Sur.Sci.130-132. 334 (1998)

[文献書誌] Y.Kawaguchi: "Selective area growth of GaN on Si substrates using SiO2 mask by MOVPE" Japanese Journal of Applied Physics. 37. L966 (1998)

[文献書誌] M.Ishida: "Computer simulation of tunneling transfer and formation of resonant states in a GaAs/AlGaAs 2DEG disk" Japanese Journal of Applied Physics. 38(in press). (1999)

[文献書誌] H.Iwano: "Hopping conduction and localized states in p-Si wires formed by focused ion beam implantations" Journal of Vacuum Science & Technology B. 16. 2558 (1998)

[文献書誌] J.P.Bird: "Intrinsic stable orbits in open quantum dots" Semicond.Sci.Technol.13. A4 (1998)

[文献書誌] K.Ishibashi: "Characterization of SET electrometer coupled to the quantum dot in GaAs/AlGaAs 2DEG" Microelectronics Engineering. (in press). (1999)

1998 年度実績報告書

長谷川英機北海道大学, 工学研究科, 教授 (60001781)