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[文献書誌] Y. Ishikawa: "Missing-dinner structures and their kink defects on molecular beam epitaxially grown (2×4) reconstruced (001) InP and GaAs surfaced studied by ultrahigh-vacuum scanning tunneling microscopy" Jpn. J. Appl. Phys.36 (3)印刷中. (1997)
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[文献書誌] B. W. Yang: "″Properties of InAs_xP_<1-x> Layer Formed by P-As Exchanbe Reaction on (001) InP Surface Exposed to As_4 Beam″" Jounal of Electronic Materials. 25. 379-384 (1996)
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[文献書誌] H. Fujikura: "″Fabrication of InP-Based InGaAs Ridge Quantum Wires Utilizing Selective Moleculat Beam Epitaxial Growth on (311) A Facets″" Jounal of Electronic Materials. 25. 619-625 (1996)
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[文献書誌] S. Suzuki: "″A Novel Insulated Gate Technology for InGaAs High Electron Mobility Transistors Using Silicon Interlayer Based Passivation Technique″" Jounal of Electronic Materials. 25. 649-656 (1996)
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[文献書誌] B. X. Yang: "″Scanning Tunneling Microscope Study of (001) InP Surface Prepared by Gas Source Molecular Beam Epitaxy″" Japanese Journal of Applied Physics. 35. 1267-1272 (1996)
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[文献書誌] H. Fujikura: "″Photoluminescence and Cathodoluminescence Investigation of Uptical Properties of InP-Based InGaAs Ridge Quantum Wires Formed by Selective Molective Molecular Beam Epitaxy″" Japanese Journal of Applied Physics. 35. 1333-1339 (1996)
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[文献書誌] S. Kasai: "Fabrication and Characterization of Novel Lateral Surface Superlattice Structure Utilizing Schottky Barrier Height Control by Doped Silicon Interface Control Layers" Japanese Journal of Applied Physics. 1340-1347 (1996)
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[文献書誌] S. Kasai: "Electron Beam Induced Current Characterization of Novel GaAs Quantum Nanostructures Based on Potential Modulation of Two-Dimensional Electron Gas by Schottky In-Plane Gates" Japanese Journal of Applied Physics. 35. 6652-6658 (1996)
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[文献書誌] S. Uno: "0.86e V Platinum Schottky Barrier on Indium Phosphide by In Situ Electrochemical Process and Its Application to MESFETs" Japanese Journal of Applied Physics. 35. 1258-1263 (1996)
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[文献書誌] M. Kihara: "″Effect of Mis-Orientation of Mesa-Stripes on the Growth of InGaAs Quantum Wires by Selective Molecular Beam Epitaxy″." Appl. Sur. Sci. 印刷中. (1997)
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[文献書誌] K. Jinushi: "Novel GaAs-Based Single Electron Transistors with Schottky In-Plane Gates Operating up to 20K" Japanese Journal of Applied Physics. 35. 1132-1139 (1996)
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[文献書誌] H. Fujikura: "Surface Passivation of In_<0.53>Ga_<0.47>As Ridge Quantum Wires Using Silicon Interface Control Layers" Journal of Vacuum Science and Technoligy. B-14. 2888-2894 (1996)
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[文献書誌] H. Hasegawa: "Interface-controled Schottky barriers on InP and related materials" Solid-Stat Electronics. 印刷中. (1997)
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[文献書誌] T. Hashizume: "Quantum Transport A Schottky In-Plane・Gate Controlled GaAs/AlGaAs Quantum Well Wires" Phisica B. 227. 42-45 (1996)
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[文献書誌] H. Tomozawa: "Design and Fabrication of GaAs/AlGaAs Single Electron Transistors Based on In-Plane Schottky Gate Control of 2DEG" Phisica B. 227. 112-115 (1996)
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[文献書誌] S. Shiobara: "Deep Level and Conduction Mechanism in Low-Temperature GaAs Grown by Motecular Beam Epitaxy" Japanese Journal of Applied Physics. 35. 1159-1164 (1996)
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[文献書誌] 長谷川英機: "化合物半導体量子細線および量子ドットの製作" 光学. 25. 448-455 (1996)
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[文献書誌] 長谷川英機: "化合物半導体量子構造表面のSi超薄膜界面制御層によるパッシベーション" 表面科学. 17. 567-574 (1996)
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[文献書誌] 長谷川英機: "「InP系化合物半導体材料およびデバイスの新展開」" 「応用物理」. 65 (2). 108-118 (1996)
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[文献書誌] M. Araki: "Formation of InGaAs/InAlAs Quantum Wires and Dots with Extremely Smooth Facets on Mesa-Patterned (001) InP Substrates by Selective Molecular Beam Enitaxv″" Jpn. J. Appl. Phys. 36 (3)印刷中. (1997)
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[文献書誌] H. Fujikura: "″Excitation Power Dependent Photoluminescence Behavior in Etched Quantum Wires Having Silicon Interlayer-Based Edge Passivation and Its Interpretation" Jpn. J. Appl. Phys.36 (3)印刷中. (1997)
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[文献書誌] S. Kasai: "″Fabrication and Characterization of GaAs Single Electron Devices Having Single and Multiple Dots Besed on Schottky In-Plane-Gate and Wrap-Gate Control of Two-Dimensional Electron Gas21GC22:Jpn. J. Appl. Phys" 36 (3)印刷中. (1997)
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[文献書誌] H. Okada: "Observation of Coulomb Blockade Type Conductance Oscvillations up to 50K in Gated InGaAs Ridge Quantum Wires Grown by Molecular Beam Epitaxy on InP Substrates," Jpn. J. Appl. Phys. 36 (3)印刷中. (1997)
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[文献書誌] T. Sato: "Large Schottky Barrier Heights on Indium Phosphide-Based Materials Realized by In-Situ Electrochemical Process." Jpn. J. Appl. Phys. 36 (3)印刷中. (1997)
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[文献書誌] K. Kawamura: "Theory of single electron tunneling through a quantum dot dimer," Jpn. J. Appl. Phys. 36(印刷中). (1997)
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[文献書誌] T. Mizuno: "Studies of charging effects on resonant tunneling diodes in terms of extended friedel sum rule" J. Phys Soc. Jap.65. 2594-2601 (1996)
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[文献書誌] G. Yusa: "GaAs/n-AlGaAs fiels effect transistor with embedded InAs quantum traps and is programmable threshold characteristics," Electron. Lett. 32. 491-492 (1996)
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[文献書誌] M. Narihiro: "Resonant tunneling of electrons via 20nm-scale InAs quantum dot and magnetotunneling spectroscopy of its electronic states," Appl. Phys. Lett. 70. 105-107 (1997)
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[文献書誌] L. P. Kouwen boven: "High-frequency transport through mesoscopic structures" Surface Science. 361/362. 591-595 (1996)
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[文献書誌] D. Dixon: "Linear and non-linear transport through coupled quantum dot" Surface Science. 361/362. 636-670 (1996)
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[文献書誌] D. Dixon: "Influence of energy level alignment on tunneling between coupled quantum dots" Phys. Rev. B. 53. 12625-12631 (1996)
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[文献書誌] Y. J. Chun: "The role of atomic hydrogen for formation of quantum dots by self-organizing process in MBE," Physica B. 227. 229-301 (1996)
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[文献書誌] Y. J. Chun: "Array of self-organized InGaAs quantum dots on GaAs (311) substrates by atomic hydrogen-assisted molecular beam epitaxy," Jpn. J. Appl. Phys. 35. L1075-1077 (1996)
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[文献書誌] Y. J. Chun: "Surfactant effects of atomic hydrogen on low-temperature growth of InAs on InP" Jpn. J. Appl. Phys. 35. L1689-1692 (1996)
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[文献書誌] M. Kawabe: "Formation of high density quantum dot array by molecular beam epitaxy" Jpn. J. Appl. Phys.36(印刷中). (1997)
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[文献書誌] "Collected Abstracts of 1996 International Symposium on Formation, Physics snd Devia Application of Quantum Dot Structures" Hideki Hasegawa, 214 (1996)
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[文献書誌] "単電子デバイスとその高密度集積化平成8年度成果報告書" 長谷川英機, 178 (1997)