-
[文献書誌] T. Sugiyama,: ""Atomic-Layer Etching of Ge Using an Ultraclean ECR Plasma"," Appl. Surf. Sci.(in press). (1997)
-
[文献書誌] S. Kobayashi,: ""Initial Growth Characteristics of Germanium on Silicon in LPCVD Using Germane Gas"," J. Crystal Growth.Vol. 174, No-1-4 (in press). (1997)
-
[文献書誌] T. Watanabe: ""Atomic-Order Layer Growth of Silicon Nitride Films at Low Temperatures"," the 13th International Conference on Chemical Vapor Deposition. Vol. PV96-5. 504-509 (1996)
-
[文献書誌] Y. Yamamoto,: ""Selective Growth of W at Very Low Temperatures Using a WF_6-SiH_4 Gas System"," the 13th International Conference on Chemical Vapor Deposition. Vol. PV96-5. 814-820 (1996)
-
[文献書誌] T. Sugiyama,: ""Atomic-Layer Etching of Ge Using an Ultraclean ECR Plasma"," 4th International Symposium on Atomic Layer Epitaxy and Related Surface Processes. Mo1510. (1996)
-
[文献書誌] S. Kobayashi,: ""Initial Growth Characteristics of Germanium on Silicon in LPCVD Using Germane Gas"," The 9th International Conference on Vapor Growth & Epitaxy. 116 (1996)
-
[文献書誌] J. Murota,: ""Atomic-Layer Surface Reaction of SiH_4 on Ge (100) and GeH_4 on Si (100)"," 1996 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures (QDS'96),. 24 (1996)
-
[文献書誌] J. Murota,: ""Atomic-Layer Surface Reaction of Silane on the Germanium (100) Surface"," Proceeding of the Second Topical Meeting on Structural Dynamics of Epitaxy and Quantum Mechanical Approach,. 97-101 (1997)
-
[文献書誌] M. Ishii,: ""0.1μm MOSFET with Super Self-Aligned Shallow Junction Electrodes"," ULSI Science and Technology '97,. (in press). (1997)
-
[文献書誌] T. Watanabe: ""Atomic-Order Nitridation of the H-Terminated and H-Free Si Surfaces by NH_3"," The 14th International Conference on Chemical Vapor Deposition,. (in press). (1997)
-
[文献書誌] M. Sakuraba,: ""H-Termination on Ge (100) and Si (100) by Diluted HF Dipping and by Annealing in H_2"" 5th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing,. (in press). (1997)