1997 年度実績報告書

超高真空非接触・非破壊容量-電圧測定システムの開発

研究課題

研究課題/領域番号	08555072
研究機関	北海道大学
研究代表者	長谷川英機北海道大学, 大学院・工学研究科, 教授 (60001781)
研究分担者	坂井高正大日本スクリーン製造(株), 電子機器事業部開発部, 課長(研究職) 藤倉序章北海道大学, 大学院・工学研究科, 助手 (70271640) 橋詰保北海道大学, 大学院・工学研究科, 助教授 (80149898)
キーワード	非接触・C-V / 超高真空一貫システム / 表面・界面準位 / 表面プロセス / フェルミ準位ピンニング / 水素終端シリコン表面 / 極博絶縁膜 / ECRプラズマ
研究概要	本研究の目的は、超高真空中や各種プロセス雰囲気中で、半導体の伝導形、不純物プロフィール、表面準位分布、表面近傍のバルク局在準位分布を測定することを可能とする、「超高真空非接触・非破壊容量-電圧(C-V)測定システム」を設計・試作・評価し、表面再権成や表面緩和した半導体表面、原子レベルでの処理をした表面、極薄絶縁膜をもつ表面などの電子物性評価に適用することである。得られた主要な成果を以下にまとめる。 1)「超高真空非接触・非破壊容量-電圧(C-V)測定システム」の4つの主要構成部の設計・製作を、次に示すように行った。(1)試料搬送機構を含む超高真空チャンバを製作した。(2)C-V測定用フィールドプレートと試料表而を100〜300nmの一定距離に維持するために、超高真空対応のピエゾ機構を備えた平行維持電極制御部を設計・製作した。(3)光学手法によりフィールドプレートと試料表面間の超高真空ギャップ測定部を設計・製作した。(4)配線容量の補正機構を備えた容量測定部およびデータ解析部を製作した。 2)これらの構成部を中心として全体のシステムを組み上げ、基本動作を確認し、さらに、超高真空一貫成長/評価/加工システムと接続し、超高真空環境を保持したまま、非接触・非破壊C-V評価を行った。 3)水素終端処理シリコン表面の非接触C-V測定を行った結果、水素終端Si(111)表面には、価電子帯から0.7eV付近の位置に高密度の離散的な準位が発生し、フェルミ準位がピンニングされることを明らかにした。 4)弗化アンモニウム処理されたSi(100)表面では、自然酸化膜が残留し、大きなヒステリシスを伴うC-V曲線が観測されたが、この表面をECR支援水素プラズマ処理することによって、ヒステリシスが大幅に減少し、水素プラズマ処理が界面準位の低減に効果的であることを示した。 5)400℃以下の低温で酸化した極薄絶緑膜を有するシリコン表面および低温プロセス(化学酸化法、低温熱酸化法)で形成した極薄酸化膜/Si界面は、いずれもGaAs MIS構造に類似したC-V特性を示し、狭いU字形の高密度界面準位分布を有し、フェルミレベルは電荷中性点付近に強くピンニングされてる、ことが明らかとなった。 6)電子サイクロトロン励起N_2Oプラズマによる酸窒化によって、界面準位密度が1x10^<11>cm^<-2>e^<V-1>程度の良好な界面特性を有する、極薄酸窒化膜/Si界面が、400℃の低温で形成できることが示された。 7)超高真空中で熱清浄化されたInP表面、エピタキシャル成長されたGaAsおよびInP表面に非接触C-V法を適用し、これらの化合物半導体表面には高密度の表面準位が存在することを、初めて明らかにした。

研究成果
(31件)

すべてその他

すべて文献書誌 (31件)

[文献書誌] Y.Hanada: "Direct Formation of In GaAs Coupled Wire-Dot Structures by Selective Molecular Beam Epitaxy on InP Patterned Substrates" Solid State Electronics. (印刷中). (1998)
[文献書誌] H.Okada: "A Novel Wrap-Gate-Controlled Single Electron Transistor Formed on an InGaAs Ridge Quantum Wire Grown by Selective MBE" Solid State Electronics. (印刷中). (1998)
[文献書誌] T.Hashizume: "In-Situ Contactless characterization of Microscopic and Macroscopic Properties of Si-doped MBE-Grown(2x4)GaAs Surfaces" Japanese Journal of Applied Physics. (印刷中). (1998)
[文献書誌] H.Fujikura: "Controlled Formation of Narrow and Uniform InP-Based In GaAs Ridge Quantum Wire Arrays by Selective Molecular Beam Epitaxy" Japanese Journal of Applied Physics. (印刷中). (1998)
[文献書誌] B.Adamowicz: "Computer Analysis of Surface Recombination Process at Si and Compound Semiconductor Surfaces and Behavior of Surface Recombination Velocity" Japanese Journal of Applied Physics. (印刷中). (1998)
[文献書誌] N.Tsurumi: "In-Situ UHV-STM Study of Formation Process of Ultrathin MBE Si Layer on GaAs (001)-(2x4) Surface" Japanese Journal of Applied Physics. (印刷中). (1998)
[文献書誌] Y.Satoh: "Computer Simulation and Experimental Characterization of Single Electron Transistors Based on Schottky Wrap Gate Control of 2DEG" Japanese Journal of Applied Physics. (印刷中). (1998)
[文献書誌] H.Hasegawa: "Electrochemical Formation and Characterization of In-Plane and Wrap Gate Structures for Realization of GaAs-and InP-Based Quantum Wires and Dots" Applied Surface Science. 123/124(印刷中). (1998)
[文献書誌] T.Hashizume: "Surface Passivation of GaAs with Ultrathin Si_3N_4/Si Inter-face Control Layer Formed by In-Situ ECR Plasma Nitridation" Applied Surface Science. 123/124(印刷中). (1998)
[文献書誌] H.Takahashi: "Novel InP Metal-Insulator-Semiconductor Structure Having Ultrathin Silicon Interface Control Layer" Applied Surface Science. 123/124(印刷中). (1998)
[文献書誌] H.Hasegawa: "Interface-Controlled Schottky Barriers on InP and Related Materials" Solid State Electronics. 41. 1441-1450 (1998)
[文献書誌] S.Suzuki: "Fabrication and Electrical Characterization of InP-Based Insulated Gate Power HEMTs Using Ultrathin Si Interface Control Layer" Solid State Electronics. 41. 1641-1646 (1998)
[文献書誌] B.Adamowicz: "Photoluminescence Characterization of Air Exposed AlGaAs Surface and Passivated Ex-Situ by Ultrathin Silicon Interface Control Laye" Physica E. (印刷中). (1998)
[文献書誌] H.Hasegawa: "Formation of InP-Based Quantum Structures by Selective MBE on Patterned Substrates Having High-Index Facets" Microelectronics Journal. 28. 887-901 (1997)
[文献書誌] M.Araki: "Fabrication of InGaAs Quantum Wires and Dots by Selective Molecular Beam Epitaxial Growth on Various Mesa-Patterned (001) InP Substrates" Japanese Journal of Applied Physics. 36. 1763-1769 (1997)
[文献書誌] H.Fujikura: "Excitation Power Dependent Photoluminescence Behavior in Etched Quantum Wires Having Silicon Interlayer-Based Edge Passivation and Its Interpretation" Japanese Journal of Applied Physics. 36. 1937-1943 (1997)
[文献書誌] S.Kasai: "Fabrication and Characterization of GaAs Single Electron Devices Having Single and Multiple Dots Based on Schottky In-Plane-Gate and Wrap-Gate Control of Two-Dimensional Electron Gas" Japanese Journal of Applied Physics. 36. 1678-1685 (1997)
[文献書誌] H.Okada: "Observation of Coulomb Blockade Oscillations up to 50K in Gated InGaAs Ridge Quantum Wires Grown by Molecular Beam Epitaxy in InP substrates" Japanese Journal of Applied Physics. 36. 1672-1677 (1997)
[文献書誌] T.Kudoh: "Controlled Formation of Metal-Semiconductor Interface to 2DEG Layer by In-Situ Electrochemical Process and Its Application to In-Plane Gated Electron Waveguide Devices" Applied Surface Science. 117/118. 342-346 (1997)
[文献書誌] M.Kihara: "Effect of Mis-Orientation of Mesa-Stripes on the Growth of InGaAs Quantum Wires by Selective Molecular Beam Epitaxy" Applied Surface Science. 117/118. 385-389 (1997)
[文献書誌] H.Hasegawa: "Excitation Power Dependent Photoluminescence Characterization of Insulator-Semiconductor Interfaces on Near Surface Quantum Structures Passivated by Silicon Interface Control Layer Technology" Applied Surface Science. 117/118. 710-713 (1997)
[文献書誌] K.Ikeya: "Successful Surface Passivation of Air-Exposed AlGaAs by a Silicon Interface Control LAyer-Based Technique" Japanese Journal of Applied Physics. 36. 1756-1762 (1997)
[文献書誌] H.Fujikura: "Formation of Two-Dimensional Arrays of InP-Based InGaAs Quantum Dots on Patterned Substrates by Selective Molecular Beam Epitaxy" Japanese Journal of Applied Physics. 36. 4092-4096 (1997)
[文献書誌] H.Okada: "Basic Control Characteristics of Novel Schottky In-Plane and Wrap Gate Structures Studied by Simulation and Transport Measurements in GaAs and InGaAs Quantum Wires" Japanese Journal of Applied Physics. 36. 4156-4160 (1997)
[文献書誌] Y.Ishikawa: "Kink defects and fermi level pinning on (2x4) reconstructed molecular beam epitaxially grown surfaces of GaAs and InP studied by ultrahigh-vacuum scanning tunneling microscopy and X-ray photoelectron spectroscopy" Jonrnal of vacuum Science and Technology B. 15. 1163-1172 (1997)
[文献書誌] H.Hasegawa: "Evolution Mechanism of Nearly-Pinning Platinum/N-Type Indium Phosphide Interface with a High Schottky Barrier Height by In-Situ Electrochemical Process" Journal of Vacuum Science and Technology B. 15. 1227-1235 (1997)
[文献書誌] Y.Dohmae: "Capacitance-Voltage Behavior of Insulated Gate InGaAs HEMT Capacitor Having Silicon Interface Control Layer" Japanese Journal of Applied Physics. 36. 1834-1840 (1997)
[文献書誌] Y.Ishikawa: "Missing-dimer structures and their kink defects on molecular beam epitaxially grown (2x4) reconstructed (001) InP and GaAs surfaces studied by ultrahigh-vacuum scanning tunneling microscopy" Japanese Journal of Applied Physics. 36. 1749-1755 (1997)
[文献書誌] T.Sato: "Large Schottky Barrier Heights on Indium Phosphide-Based Materials Realized by In-Situ Electrochemical Process" Japanese Journal of Applied Physics. 36. 1811-1817 (1997)
[文献書誌] T.Hashizume: "Dominant Electron Trap with Metastable state in Molecular Beam Epitaxial GaAs Grown at Low Temperatures" Japanese Journal of Applied Physics. 36. 1775-1780 (1997)
[文献書誌] T.Yoshida: "Characterization of Interface Electronic Properties of Low-Temperature Ultrathin Oxides and Oxynitrides Formed on Si (111) Surfaces by Contactless Capacitance-Voltage and Photoluminescence Methods" Japanese Journal of Applied Physics. 36. 1453-1459 (1997)

1997 年度 実績報告書

超高真空非接触・非破壊容量-電圧測定システムの開発

研究代表者

長谷川 英機 北海道大学, 大学院・工学研究科, 教授 (60001781)

研究成果

[文献書誌] Y.Hanada: "Direct Formation of In GaAs Coupled Wire-Dot Structures by Selective Molecular Beam Epitaxy on InP Patterned Substrates" Solid State Electronics. (印刷中). (1998)

[文献書誌] H.Okada: "A Novel Wrap-Gate-Controlled Single Electron Transistor Formed on an InGaAs Ridge Quantum Wire Grown by Selective MBE" Solid State Electronics. (印刷中). (1998)

[文献書誌] T.Hashizume: "In-Situ Contactless characterization of Microscopic and Macroscopic Properties of Si-doped MBE-Grown(2x4)GaAs Surfaces" Japanese Journal of Applied Physics. (印刷中). (1998)

[文献書誌] H.Fujikura: "Controlled Formation of Narrow and Uniform InP-Based In GaAs Ridge Quantum Wire Arrays by Selective Molecular Beam Epitaxy" Japanese Journal of Applied Physics. (印刷中). (1998)

[文献書誌] B.Adamowicz: "Computer Analysis of Surface Recombination Process at Si and Compound Semiconductor Surfaces and Behavior of Surface Recombination Velocity" Japanese Journal of Applied Physics. (印刷中). (1998)

[文献書誌] N.Tsurumi: "In-Situ UHV-STM Study of Formation Process of Ultrathin MBE Si Layer on GaAs (001)-(2x4) Surface" Japanese Journal of Applied Physics. (印刷中). (1998)

[文献書誌] Y.Satoh: "Computer Simulation and Experimental Characterization of Single Electron Transistors Based on Schottky Wrap Gate Control of 2DEG" Japanese Journal of Applied Physics. (印刷中). (1998)

[文献書誌] H.Hasegawa: "Electrochemical Formation and Characterization of In-Plane and Wrap Gate Structures for Realization of GaAs-and InP-Based Quantum Wires and Dots" Applied Surface Science. 123/124(印刷中). (1998)

[文献書誌] T.Hashizume: "Surface Passivation of GaAs with Ultrathin Si_3N_4/Si Inter-face Control Layer Formed by In-Situ ECR Plasma Nitridation" Applied Surface Science. 123/124(印刷中). (1998)

[文献書誌] H.Takahashi: "Novel InP Metal-Insulator-Semiconductor Structure Having Ultrathin Silicon Interface Control Layer" Applied Surface Science. 123/124(印刷中). (1998)

[文献書誌] H.Hasegawa: "Interface-Controlled Schottky Barriers on InP and Related Materials" Solid State Electronics. 41. 1441-1450 (1998)

[文献書誌] S.Suzuki: "Fabrication and Electrical Characterization of InP-Based Insulated Gate Power HEMTs Using Ultrathin Si Interface Control Layer" Solid State Electronics. 41. 1641-1646 (1998)

[文献書誌] B.Adamowicz: "Photoluminescence Characterization of Air Exposed AlGaAs Surface and Passivated Ex-Situ by Ultrathin Silicon Interface Control Laye" Physica E. (印刷中). (1998)

[文献書誌] H.Hasegawa: "Formation of InP-Based Quantum Structures by Selective MBE on Patterned Substrates Having High-Index Facets" Microelectronics Journal. 28. 887-901 (1997)

[文献書誌] M.Araki: "Fabrication of InGaAs Quantum Wires and Dots by Selective Molecular Beam Epitaxial Growth on Various Mesa-Patterned (001) InP Substrates" Japanese Journal of Applied Physics. 36. 1763-1769 (1997)

[文献書誌] H.Fujikura: "Excitation Power Dependent Photoluminescence Behavior in Etched Quantum Wires Having Silicon Interlayer-Based Edge Passivation and Its Interpretation" Japanese Journal of Applied Physics. 36. 1937-1943 (1997)

[文献書誌] S.Kasai: "Fabrication and Characterization of GaAs Single Electron Devices Having Single and Multiple Dots Based on Schottky In-Plane-Gate and Wrap-Gate Control of Two-Dimensional Electron Gas" Japanese Journal of Applied Physics. 36. 1678-1685 (1997)

[文献書誌] H.Okada: "Observation of Coulomb Blockade Oscillations up to 50K in Gated InGaAs Ridge Quantum Wires Grown by Molecular Beam Epitaxy in InP substrates" Japanese Journal of Applied Physics. 36. 1672-1677 (1997)

[文献書誌] T.Kudoh: "Controlled Formation of Metal-Semiconductor Interface to 2DEG Layer by In-Situ Electrochemical Process and Its Application to In-Plane Gated Electron Waveguide Devices" Applied Surface Science. 117/118. 342-346 (1997)

[文献書誌] M.Kihara: "Effect of Mis-Orientation of Mesa-Stripes on the Growth of InGaAs Quantum Wires by Selective Molecular Beam Epitaxy" Applied Surface Science. 117/118. 385-389 (1997)

[文献書誌] H.Hasegawa: "Excitation Power Dependent Photoluminescence Characterization of Insulator-Semiconductor Interfaces on Near Surface Quantum Structures Passivated by Silicon Interface Control Layer Technology" Applied Surface Science. 117/118. 710-713 (1997)

[文献書誌] K.Ikeya: "Successful Surface Passivation of Air-Exposed AlGaAs by a Silicon Interface Control LAyer-Based Technique" Japanese Journal of Applied Physics. 36. 1756-1762 (1997)

[文献書誌] H.Fujikura: "Formation of Two-Dimensional Arrays of InP-Based InGaAs Quantum Dots on Patterned Substrates by Selective Molecular Beam Epitaxy" Japanese Journal of Applied Physics. 36. 4092-4096 (1997)

[文献書誌] H.Okada: "Basic Control Characteristics of Novel Schottky In-Plane and Wrap Gate Structures Studied by Simulation and Transport Measurements in GaAs and InGaAs Quantum Wires" Japanese Journal of Applied Physics. 36. 4156-4160 (1997)

[文献書誌] H.Hasegawa: "Evolution Mechanism of Nearly-Pinning Platinum/N-Type Indium Phosphide Interface with a High Schottky Barrier Height by In-Situ Electrochemical Process" Journal of Vacuum Science and Technology B. 15. 1227-1235 (1997)

[文献書誌] Y.Dohmae: "Capacitance-Voltage Behavior of Insulated Gate InGaAs HEMT Capacitor Having Silicon Interface Control Layer" Japanese Journal of Applied Physics. 36. 1834-1840 (1997)

[文献書誌] Y.Ishikawa: "Missing-dimer structures and their kink defects on molecular beam epitaxially grown (2x4) reconstructed (001) InP and GaAs surfaces studied by ultrahigh-vacuum scanning tunneling microscopy" Japanese Journal of Applied Physics. 36. 1749-1755 (1997)

[文献書誌] T.Sato: "Large Schottky Barrier Heights on Indium Phosphide-Based Materials Realized by In-Situ Electrochemical Process" Japanese Journal of Applied Physics. 36. 1811-1817 (1997)

[文献書誌] T.Hashizume: "Dominant Electron Trap with Metastable state in Molecular Beam Epitaxial GaAs Grown at Low Temperatures" Japanese Journal of Applied Physics. 36. 1775-1780 (1997)

[文献書誌] T.Yoshida: "Characterization of Interface Electronic Properties of Low-Temperature Ultrathin Oxides and Oxynitrides Formed on Si (111) Surfaces by Contactless Capacitance-Voltage and Photoluminescence Methods" Japanese Journal of Applied Physics. 36. 1453-1459 (1997)

1997 年度実績報告書

長谷川英機北海道大学, 大学院・工学研究科, 教授 (60001781)