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[文献書誌] K.Makihira and T.Asano: "Improving the performance of double-gate thin -film-transistors using gate offset structrue" Dig.Tech.Papers 1997 Int.Workshop on Active Matrix Liquid Crystal Displays,. 191-194 (1997)
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[文献書誌] M.Nishisaka and T.Asano: "Reduction of the floating-body effect in SOI-MOSFETs by using Schottky source/drain contacts" Ext.Abs.1997 Int.Conf.Solid State Devices and Materials. 160-161 (1997)
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[文献書誌] K.Arita,M.Akamatsu,and T.Asano: "Supressing plasma induced degradation of gate oxide by using silicon-on-insulator structures" Ext.Abs.1997 Int.Conf.Solid State Devices and Materials. 146-147 (1997)
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[文献書誌] T.Asano,E.Shibata,D.Sasaguri,K.Makihira,and K.Higa: "Field emission from an ion irradiated photoresist" Jpn.J.Appl.Phys.36・6B. L818-L820 (1997)
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[文献書誌] K.Higa,K.Nishii,and T.Asano: "Single-crystal Si field emitter fabricated by anodization" Appl.Phys.Lett.71・7. 983-985 (1997)
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[文献書誌] T.Asano,D.Sasaguri,E.Shibata,and K.Higa: "Ion beam modification of a photoresist and its application to field emitters" Jpn.J.Appl.Phys. 36・12B. 7749-7753 (1997)
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[文献書誌] K.Higa,K.Nishii,and T.Asano: "Si field emitter arrays fabricated by anodization and transfer technique" Jpn.J.Appl.Phys. 36・12B. 7741-7744 (1997)
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[文献書誌] K,Arita,M.Akamatsu,and T.Asano: "Supressing plasma induced degradation of gate oxide using silicon-on-insulator structures" Jpn.J.Appl.Phys. 37・3B. 253-256 (1997)
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[文献書誌] M.Nishisaka and T.Asano: "Reduction of the floating-body effect in SOI-MOSFETs by using Schottky source/drain contacts" Jpn.J.Appl.Phys. 37・3B. 248-252 (1997)
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[文献書誌] 田中康一郎、岡田順二、平野孝明、浅野種正: "再構成型集積回路によるデイジタル/アナログ混在回路の試作" 第6回FPGA/PLD Design Conference 予稿集. (1997)