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[文献書誌] T.Yamagata and K.Shimomura: "High responsivity in integrated optically controlled Metal-Oxide Semiconductor field-effect transistor using directly bonded SiO2-InP" IEEE Photon.Tech.Lett.9・8. 1143-1145 (1997)
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[文献書誌] T.Sakai and K.Shimomura: "High On/Off ratio and responsivity in integrated optically controlled HEMT," IEEE Photon.Tech.Lett.,. 10・3. (1998)
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[文献書誌] 下村和彦: "高性能光制御MOSFETの開発" 機能材料. 17・7. 30-36 (1997)
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[文献書誌] 下村和彦: "省電力化を実現するデバイス技術の現状と展望" 電子技術. 40・4. 8-14 (1998)
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[文献書誌] T.Sakai, Y.Takesue and K.Shimomura: "High On/Off ratio (12dB) and responsivity (300A/W) in integrated optically controlled HEMT." 2nd Optoelectronics and Communication Conference. 10C2-5. (1997)
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[文献書誌] 新井将之, 新田雄一, 下村和彦: "MOVPE法による選択成長を用いた面型光デバイス作製に関する検討" 第45回応用物理学関係連合講演会. 29a-SZL-29. (1998)