1998 年度実績報告書

半導体表面におけるステップダイナミクス

研究課題

研究課題/領域番号	10044146
研究種目	国際学術研究
応募区分	共同研究
研究機関	名古屋大学
研究代表者	一宮彪彦名古屋大学, 大学院工学研究科, 教授 (00023292)
研究分担者	中原仁名古屋大学, 大学院・工学研究科, 助手 (20293649) 上羽牧夫名古屋大学, 大学院・理学研究科, 助教授 (30183213) 箕田弘喜東京工業大学, 理学部, 助手 (20240757) 八木克道東京工業大学, 理学部, 教授 (90016072) 岩崎裕大阪大学, 産業科学研究所, 教授 (00029901)
キーワード	半導体表面 / ステップ / エピタキシャル成長 / ナノ構造 / ステップエネルギー
研究概要	本研究では半導体表面に的を絞り、エピタキシャル成長や吸着・脱離過程、さらに昇華過程およびステップパンチング過程におけるステップ端での原子・分子の脱離付着機構に関する知見を得た。シリコン、GaAs、GaN表面におけるサーファクタント効果によるエピタキシャル成長中のステップ挙動の実験結果から、サーファクタントがステップにおける吸着障壁を変イビさせ、またステップエネルギーを大きく変化させることが明らかになった(一宮、中原、Cohen)。シリコン表面上に形成した単独の孤立したナノ構造の熱崩壊の過程を走査トンネル顕微鏡(STM)により観測し、その結果、ステップ端における吸着と脱離の過程がナノ構造全体のエネルギーに大きく依存することが明らかになった。また崩壊の過程におけるステップパンチングがステップ間の斥力の大きさによることも理論との協力によって明らかになった(一宮、上羽、Einstein)。さらにナノ構造の崩壊速度に関しても、物質、原子構造などによらない一般的なスケーリング側が成り立つことが明らかになった(一宮、上羽、Williams、Einstein)。半導体の高指数面におけるステップの挙動は反射電子顕微鏡法や低速電子顕微鏡法により、ステップの挙動が、金原子の吸着により変化し、それがファセット形成に大きく影響することを明らかにし、またシリコン高指数表面におけるステップバンチング、多段ステップのスティフネスの段差依存性を明らかにした(八木、箕田、岩崎、中原、Williams、Cohen、Einstein)。またSTMによるシリコン表面上の酸化膜選択除去プロセス及び界面におけるシリコン原子ステップ解析手法の開発を行った(岩崎、Williams)。

研究成果

(27件)

すべてその他

すべて文献書誌 (27件)

[文献書誌] A.Ichimiya,Y.Tanaka and K.Hayashi: "Relaxation of nanostructures on the Si(111)(7×7)surface by high-temperature scanning tunneling microscopy," Surface Review and Latters.5. 821-832 (1998)
[文献書誌] E.A.Khramtsova and A.Ichimiya: "Comparative study of room-and high-temperature Si(111)-(√3×√3)R30°-Au structures using one-beam RHEED intensity rocking curve analysis," Phys.Rev.B57. 10049-10053 (1998)
[文献書誌] E.A.Khramtsova,H.Sakai,K.Hayashi and A.Ichimiya: "Study of the Si(111)"1x1"-Au surface using reflection high-energy electron diffraction and scanning tunneling microscopy," Jpn.J.Appl.Phys.37. 6511-6518 (1998)
[文献書誌] E.A.Khramtsova,H.Sakai,K.Hayashi and A.Ichimiya: "One monolayer of gold on Si(111)surface:Surface phase and phase transitions" Surface Sci.(印刷中). (1999)
[文献書誌] K.Sudoh,T.Yoshinobu,H.Iwasaki and E.D.Williams: "Step Fluctuations on Vicinal Si(113)" Phys.Rev.Lett,. 80. 5152-5155 (1998)
[文献書誌] K.Sudoh,T.Yoshinobu,H.Iwasaki and E.D.Williams: "Dynamics of Faceting on Vicinal Si(113)Studied by STM" Scanning Microscopy. (印刷中). (1999)
[文献書誌] K.Sudoh,T.Yoshinobu and H.Iwasaki: "Scanning Tunneling Microscopy Study of Faceting on Vicinal Si(113)" Jpn.J.Appl.Phys.,. (印刷中). (1999)
[文献書誌] N.Li,T.Yoshinobu and H.Iwasaki: "Low Energy Electron Beam Stimulated Surface Reaction:Selective Etching of SiO2/Si Using Scanning Tunneling Microscope" Jpn.J.Appl.Phys.,. 37(8B). L995-L998 (1998)
[文献書誌] M.Hildner,R.J.Phaneuf,and E.D.Williams,: "Imaging the Depletion Zone in a Si Lateral pn Junction with Scanning Tunneling Microscopy" Applied Physics Letters,. 72. 3314-3316 (1998)
[文献書誌] C.J.Lanczycki,Y.-N.Yang,E.Fu,R.Kotlyar,E.D.Williams,and S.Das Sarma: "Growth of Si on the Si(111)Surface." Physical Review,. B57. 13132-13148 (1998)
[文献書誌] M.Giesen,R.J.Phaneuf,E.D.Williams,and T.L.Einstein,: "Photoelectron Emission Microscopy of Schottky Contacts." Surface Science,. 396. 411-421 (1998)
[文献書誌] E.D.Williams,: "Nanostructure Evolution and Electromigration on Silicon Experimental Application of Length-Scaling Predictions." Solid State Communications,. 107. 681-691 (1998)
[文献書誌] X.-S.Wang and E.D.Williams,: "Step Structures on Br-Chemisorbed Vicinal Si(111)." Surface Science,. 400. 220-231 (1998)
[文献書誌] S.V.Khare and T.L.Einstein: "A Unified View of Step-Edge Fluctuations,," Phys.Rev.B57. 4782-4797 (1998)
[文献書誌] A.Schwennicke,X.-S.Wang,T.L.Einstein,and E.D.Williams: "Evolution of Surface Morphology of Vicinal Si(111) Surfaces After Aluminum Deposition.," Surface Sci.418. 22-31 (1998)
[文献書誌] R.Held,G.Nowak,A.M.Dabiran,B.Ishaug,A.Parkhomovsky,and P.I.Cohen,I.Grzegory,and S.Porowski,: "Structure and composition of GaN(0001) A and B surfaces" J.Appl.Phys.,. (印刷中). (1999)
[文献書誌] A.M.Dabiran,S.M.Seutter,S.Stoyanov,M.C.Bartelt,J.W.Evans,and P.I.Cohen.: "Step edge barriers vs step edge relaxation in GaAs:Sn MBE" Surf.Sci.,. (印刷中). (1999)
[文献書誌] A.M.Dabiran,S.M.Seutter,and P.I.Cohen: "Direct observations of the strain-limited island growth of Sn-doped GaAs(100)," Surf.Rev.Lett.,. 5. 783-795 (1998)
[文献書誌] R.Held,D.E.Crawford,A.M.Johnston,A.M.Dabiran,and P.I.Cohen,: "N-limited vs Ga-limited Growth on GaN B by MBE using Ammonia" Surf.Rev.Lett.,. 5. 913-934 (1998)
[文献書誌] A.V.Latyshev,H.Minoda,Y.Tanishira and K.Yagi: "Electromigration and gold-induced step bunching on the Si(111)surface" Surface Sci.401. 23-33 (1998)
[文献書誌] T.Shimakura,H.Minoda,Y.Tanishiro and K.Yagi: "In-situ study of gold-induced surface structures and step rearrangements on the Si(001)surface by high-temperature STM" Surface Sci.407. L657-L664 (1998)
[文献書誌] K.Aoki,,H.Minoda,Y.Tanishira and K.Yagi: "REM studies of adsorption-induced phase transitions and faceting in the Si(111)-Au system" Surface Review and Letters. 5. 653-663 (1998)
[文献書誌] T.Suzuki,H.Monoda,Y.Tanishira and K.Yagi: "TED study of Si(113)surfaces" Surface Review and Letters. 5. 249-254 (1998)
[文献書誌] M.Uwaha: "Anisotropy Effect on the Flow-Induced Instability of the Solid-Superfluid Interface" J.Low Temp.Phys.111 No.1/2. 37-48 (1998)
[文献書誌] M.Sato,M.Uwaha and Y.Saito: "Control of Chaotic Wandering of an Isolated Step by the Drift of Adatoms" Phys.Rev.Lett.80:No.19. 4233-4236 (1998)
[文献書誌] M.Uwaha and M.Sato: "Wandering and Bunching Instabilities of Steps Described by Nonlinear Evolution Equations" Surf.Rev.Lett.5・No.3. 841-849 (1998)
[文献書誌] M.Sato and M.Uwaha: "Hierarchical Bunching of Steps in a Conserved System" J.Phys.Soc.Jpn.67 No.11. 3675-3678 (1998)

1998 年度 実績報告書

半導体表面におけるステップダイナミクス

研究代表者

一宮 彪彦 名古屋大学, 大学院工学研究科, 教授 (00023292)

研究成果

[文献書誌] A.Ichimiya,Y.Tanaka and K.Hayashi: "Relaxation of nanostructures on the Si(111)(7×7)surface by high-temperature scanning tunneling microscopy," Surface Review and Latters.5. 821-832 (1998)

[文献書誌] E.A.Khramtsova and A.Ichimiya: "Comparative study of room-and high-temperature Si(111)-(√3×√3)R30°-Au structures using one-beam RHEED intensity rocking curve analysis," Phys.Rev.B57. 10049-10053 (1998)

[文献書誌] E.A.Khramtsova,H.Sakai,K.Hayashi and A.Ichimiya: "Study of the Si(111)"1x1"-Au surface using reflection high-energy electron diffraction and scanning tunneling microscopy," Jpn.J.Appl.Phys.37. 6511-6518 (1998)

[文献書誌] E.A.Khramtsova,H.Sakai,K.Hayashi and A.Ichimiya: "One monolayer of gold on Si(111)surface:Surface phase and phase transitions" Surface Sci.(印刷中). (1999)

[文献書誌] K.Sudoh,T.Yoshinobu,H.Iwasaki and E.D.Williams: "Step Fluctuations on Vicinal Si(113)" Phys.Rev.Lett,. 80. 5152-5155 (1998)

[文献書誌] K.Sudoh,T.Yoshinobu,H.Iwasaki and E.D.Williams: "Dynamics of Faceting on Vicinal Si(113)Studied by STM" Scanning Microscopy. (印刷中). (1999)

[文献書誌] K.Sudoh,T.Yoshinobu and H.Iwasaki: "Scanning Tunneling Microscopy Study of Faceting on Vicinal Si(113)" Jpn.J.Appl.Phys.,. (印刷中). (1999)

[文献書誌] N.Li,T.Yoshinobu and H.Iwasaki: "Low Energy Electron Beam Stimulated Surface Reaction:Selective Etching of SiO2/Si Using Scanning Tunneling Microscope" Jpn.J.Appl.Phys.,. 37(8B). L995-L998 (1998)

[文献書誌] M.Hildner,R.J.Phaneuf,and E.D.Williams,: "Imaging the Depletion Zone in a Si Lateral pn Junction with Scanning Tunneling Microscopy" Applied Physics Letters,. 72. 3314-3316 (1998)

[文献書誌] C.J.Lanczycki,Y.-N.Yang,E.Fu,R.Kotlyar,E.D.Williams,and S.Das Sarma: "Growth of Si on the Si(111)Surface." Physical Review,. B57. 13132-13148 (1998)

[文献書誌] M.Giesen,R.J.Phaneuf,E.D.Williams,and T.L.Einstein,: "Photoelectron Emission Microscopy of Schottky Contacts." Surface Science,. 396. 411-421 (1998)

[文献書誌] E.D.Williams,: "Nanostructure Evolution and Electromigration on Silicon Experimental Application of Length-Scaling Predictions." Solid State Communications,. 107. 681-691 (1998)

[文献書誌] X.-S.Wang and E.D.Williams,: "Step Structures on Br-Chemisorbed Vicinal Si(111)." Surface Science,. 400. 220-231 (1998)

[文献書誌] S.V.Khare and T.L.Einstein: "A Unified View of Step-Edge Fluctuations,," Phys.Rev.B57. 4782-4797 (1998)

[文献書誌] A.Schwennicke,X.-S.Wang,T.L.Einstein,and E.D.Williams: "Evolution of Surface Morphology of Vicinal Si(111) Surfaces After Aluminum Deposition.," Surface Sci.418. 22-31 (1998)

[文献書誌] R.Held,G.Nowak,A.M.Dabiran,B.Ishaug,A.Parkhomovsky,and P.I.Cohen,I.Grzegory,and S.Porowski,: "Structure and composition of GaN(0001) A and B surfaces" J.Appl.Phys.,. (印刷中). (1999)

[文献書誌] A.M.Dabiran,S.M.Seutter,S.Stoyanov,M.C.Bartelt,J.W.Evans,and P.I.Cohen.: "Step edge barriers vs step edge relaxation in GaAs:Sn MBE" Surf.Sci.,. (印刷中). (1999)

[文献書誌] A.M.Dabiran,S.M.Seutter,and P.I.Cohen: "Direct observations of the strain-limited island growth of Sn-doped GaAs(100)," Surf.Rev.Lett.,. 5. 783-795 (1998)

[文献書誌] R.Held,D.E.Crawford,A.M.Johnston,A.M.Dabiran,and P.I.Cohen,: "N-limited vs Ga-limited Growth on GaN B by MBE using Ammonia" Surf.Rev.Lett.,. 5. 913-934 (1998)

[文献書誌] A.V.Latyshev,H.Minoda,Y.Tanishira and K.Yagi: "Electromigration and gold-induced step bunching on the Si(111)surface" Surface Sci.401. 23-33 (1998)

[文献書誌] T.Shimakura,H.Minoda,Y.Tanishiro and K.Yagi: "In-situ study of gold-induced surface structures and step rearrangements on the Si(001)surface by high-temperature STM" Surface Sci.407. L657-L664 (1998)

[文献書誌] K.Aoki,,H.Minoda,Y.Tanishira and K.Yagi: "REM studies of adsorption-induced phase transitions and faceting in the Si(111)-Au system" Surface Review and Letters. 5. 653-663 (1998)

[文献書誌] T.Suzuki,H.Monoda,Y.Tanishira and K.Yagi: "TED study of Si(113)surfaces" Surface Review and Letters. 5. 249-254 (1998)

[文献書誌] M.Uwaha: "Anisotropy Effect on the Flow-Induced Instability of the Solid-Superfluid Interface" J.Low Temp.Phys.111 No.1/2. 37-48 (1998)

[文献書誌] M.Sato,M.Uwaha and Y.Saito: "Control of Chaotic Wandering of an Isolated Step by the Drift of Adatoms" Phys.Rev.Lett.80:No.19. 4233-4236 (1998)

[文献書誌] M.Uwaha and M.Sato: "Wandering and Bunching Instabilities of Steps Described by Nonlinear Evolution Equations" Surf.Rev.Lett.5・No.3. 841-849 (1998)

[文献書誌] M.Sato and M.Uwaha: "Hierarchical Bunching of Steps in a Conserved System" J.Phys.Soc.Jpn.67 No.11. 3675-3678 (1998)

1998 年度実績報告書

一宮彪彦名古屋大学, 大学院工学研究科, 教授 (00023292)